BZX85C
Silicon Planar Power Zener Diodes
for use in stabilizing and clipping circuits with high
power rating.
The Zener voltages are graded according to the
international E 24 standard. Other tolerances and
higher Zener voltages are upon request.
Max. 0.7
Max. 2.8
Min. 25.4
Black
Cathode Band
Black
Part No.
XXX
Max. 4.2
Min. 25.4
Glass Case DO-41
Dimensions in mm
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Power Dissipation
Junction Temperature
Storage Temperature Range
1)
Symbol
P
tot
T
j
T
stg
Value
1.3
1)
Unit
W
O
200
- 55 to + 200
C
C
O
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
Characteristics at T
a
= 25
O
C
Parameter
Thermal Resistance Junction to Ambient Air
Forward Voltage
at I
F
= 200 mA
1)
Symbol
R
thA
V
F
Max.
130
1)
1.2
Unit
K/W
V
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
BZX85C
Characteristics at T
a
= 25
O
C
Type
BZX85C2V7
BZX85C3V0
BZX85C3V3
BZX85C3V6
BZX85C3V9
BZX85C4V3
BZX85C4V7
BZX85C5V1
BZX85C5V6
BZX85C6V2
BZX85C6V8
BZX85C7V5
BZX85C8V2
BZX85C9V1
BZX85C10
BZX85C11
BZX85C12
BZX85C13
BZX85C15
BZX85C16
BZX85C18
BZX85C20
BZX85C22
BZX85C24
BZX85C27
BZX85C30
BZX85C33
BZX85C36
BZX85C39
BZX85C43
BZX85C47
BZX85C51
BZX85C56
BZX85C62
BZX85C68
BZX85C75
1)
V
Znom
(V)
2.7
3
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
Zener Voltage
1)
V
ZT
(V)
2.5...2.9
2.8...3.2
3.1...3.5
3.4...3.8
3.7...4.1
4...4.6
4.4...5
4.8...5.4
5.2...6
5.8...6.6
6.4...7.2
7...7.9
7.7...8.7
8.5...9.6
9.4...10.6
10.4...11.6
11.4...12.7
12.4...14.1
13.8...15.6
15.3...17.1
16.8...19.1
18.8...21.2
20.8...23.3
22.8...25.6
25.1...28.9
28...32
31...35
34...38
37...41
40...46
44...50
48...54
52...60
58...66
64...72
70...79
at I
ZT
(mA)
80
80
70
60
60
50
45
45
45
35
35
35
25
25
25
20
20
20
15
15
15
10
10
10
8
8
8
8
6
6
4
4
4
4
4
4
Dynamic Resistance
Z
ZT
at I
ZT
Z
ZK
Max. (Ω)
(mA)
Max. (Ω)
20
80
400
20
80
400
20
70
400
15
60
500
15
60
500
13
50
500
13
45
600
10
45
500
7
45
400
4
35
300
3.5
35
300
3
35
200
5
25
200
5
25
200
7
25
200
8
20
300
9
20
350
10
20
400
15
15
500
15
15
500
20
15
500
24
10
600
25
10
600
25
10
600
30
8
750
30
8
1000
35
8
1000
40
8
1000
50
6
1000
50
6
1000
90
4
1500
115
4
1500
120
4
2000
125
4
2000
130
4
2000
135
4
2000
at I
ZK
(mA)
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Reverse Current
I
R
at V
R
Max. (µA)
(V)
150
1
100
1
40
1
20
1
10
1
3
1
3
1
1
1.5
1
2
1
3
1
4
1
4.5
1
6.2
1
6.8
0.5
7
0.5
8.2
0.5
9.1
0.5
10
0.5
11
0.5
12
0.5
13
0.5
15
0.5
16
0.5
18
0.5
20
0.5
22
0.5
24
0.5
27
0.5
30
0.5
33
0.5
36
0.5
39
0.5
43
0.5
47
0.5
51
0.5
56
Tested with pulses t
p
= 20 ms.
BZX85C
Breakdown characteristics
at Tj=constant (pulsed)
mA
240
C3V9
200
C5V6
Iz
160
C6V8
C8V2
120
C10
C12
80
C4V7
BZX 85...
Tj=25
o
C
C15
40
C18
C22
0
0
1
2
3
4
5
6
7
8
9
10
Vz
11
12
13
14
15
16
17
18
19
20
21
22
23
24V
Breakdown characteristics
at Tj=constant (pulsed)
mA
50
Iz
40
C33
C39
30
C47
C68
C27
Tj=25
o
C
BZX 85...
20
C 75
C 91
10
0
20
25
30
35
40
45
50
55
60
Vz
65
70
75
80
85
90
95V
Admissible power dissipation
Versus ambient temperature
Valid provided that leads are kept at ambient
Temperature at a distance of 10 mm from case
w
P
tot
T
amb
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