JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
TO—92
C2611
FEATURES
Power dissipation
P
CM
: 0.75
Collector current
I
CM
:
0.2
TRANSISTOR（ NPN
）
W（Tamb=25℃）
A
1. BASE
2.COLLECTOR
Collector-base voltage
V
(BR)CBO
: 600
3. EMITTER
1 2 3
V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
h
FE
（
1
）
DC current gain
h
FE
（
2
）
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE
(sat)
V
BE
(sat)
V
CE
= 10V, I
C
= 0.25 mA
I
C
= 50mA, I
B
= 10 m A
I
C
= 50 mA, I
B
= 10mA
V
CE
= 20 V, I =20mA
C
Transition frequency
5
0.5
1.2
V
V
unless
Test
otherwise
MIN
specified）
TYP
MAX
UNIT
V
V
V
100
200
100
μA
μA
μA
conditions
Ic= 100μA
，I
E
=0
I
C
= 1
mA , I
B
=0
600
400
7
I
E
= 100
μA，I
C
=0
V
CB
= 600 V , I
E
=0
V
CE
= 400 V , I
B
=0
V
EB
= 7 V ,
V
CE
= 20
I
C
=0
V, I
C
= 20m A
10
40
f
T
8
MHz
f =
1MHz
Fall time
Storage time
t
f
I
C
=50mA,
I
B1
=-I
B2
=5mA,
V
CC
=45V
0.3
1.5
μs
μs
t
S
CLASSIFICATION OF h
FE(1)
Rank
Range
10-15
15-20
20-25
25-30
30-35
35-40
TO-92 PACKAGE OUTLINE DIMENSIONS
D
D1
A
A1
E
b
φ
e
e1
Symbol
A
A1
b
c
D
D1
E
e
e1
L
Ö
Dimensions In Millimeters
Min
3.300
1.100
0.380
0.360
4.400
3.430
4.300
1.270TYP
2.440
14.100
0.000
2.640
14.500
1.600
0.380
4.700
Max
3.700
1.400
0.550
0.510
4.700
Min
L
Dimensions In Inches
Max
0.146
0.055
0.022
0.020
0.185
0.185
0.050TYP
0.096
0.555
0.000
0.104
0.571
0.063
0.015
0.130
0.043
0.015
0.014
0.173
0.135
0.169
C
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