JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92
C945
TRANSISTOR (NPN )
Plastic-Encapsulate Transistors
TO-92
1.EMITTER
FEATURE
Excellent h
FE
linearity
Low noise
Complementary to A733
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
60
50
5
150
400
125
-55-125
Unit
V
V
V
mA
mW
℃
℃
2.COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (T
a
=25℃
unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
f
T
C
ob
NF
Test
conditions
Min
60
50
5
0.1
0.1
0.1
70
40
0.3
1
200
3.0
10
V
V
MHz
pF
dB
700
Typ
Max
Unit
V
V
V
μA
μA
μA
I
C
=1mA , I
E
=0
I
C
=100
μ
A , I
B
=0
I
E
=100
μ
A, I
C
=0
V
CB
=60V, I
E
=0
V
CE
=45V
, I
B
=0
V
EB
=5V ,I
C
=0
V
CE
=6V , I
C
=1mA
V
CE
=6V , I
C
=0.1mA
I
C
=100mA, I
B
=10mA
I
C
=100mA, I
B
=10mA
V
CE
=6V,I
C
=10mA,f=30MHz
V
CB
=10V,I
E
=0,f=1MH
z
V
CE
=
6V,I
C
=0.1mA
R
G
=
10kΩ
,
f=1MHz
CLASSIFICATION OF h
FE(1)
Rank
Range
O
70-140
Y
120-240
GR
200-400
BL
350-700
A,Jan,2011
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