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CAV414

Converter IC for Capacitive Signals

器件类别:传感器    传感器/换能器   

厂商名称:安茂微电子(AME)

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厂商名称
安茂微电子(AME)
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Converter IC for Capacitive Signals
FEATURES
Wide Supply Voltage Range: 6...35V
Wide Operating Temperature Range:
–40°C...+85°C
High Detection Sensitivity of Relative
Capacitive Changes: 5% – 100%
Detection Frequency up to 2kHz
Adjustable Voltage Range:
0...5/10V, other
Reference Voltage Source: 5V
Protection against Reverse Polarity
Output Current Limitation
Adjustable with only two Resistors
CAV414
GENERAL DESCRIPTION
The CAV414 is an universal multipurpose in-
terface for capacitive sensors and contains the
complete signal processing unit on chip. The
CAV414 detects the relative capacitive change
of a measuring capacity to a fixed reference
capacity. The IC is optimised for capacities in
the wide range of 10pF to 2nF with possible
changes of capacity of 5% to 100% of the ref-
erence capacity.
The voltage output is formed by a high accu-
racy instrumentation amplifier in combination
with an operational amplifier.
With only a few external components, the
CAV414 is suitable for a great variety of ap-
plications including a zero compensation.
APPLICATIONS
Industrial Process Control
Distance Measurement
Pressure Measurement
Humidity Measurement
Level Control
DELIVERY
DIL16 packages (samples)
SO16(n) packages
Dice on 5“ blue foil
BLOCK DIAGRAM
COSC
12
Reference
Oscillator
CAV414
IA
OP
VCC
9
CX1
16
Integrator 1
Integrator 2
Signal Conditioning
VOUT
8
7
10
CX2
14
GAIN
GND
Voltage/Current
Reference
15
13
4
5
6
2
3
1
11
VREF
CL1
Figure 1
CL2
RL LPOUT VM
RCX1 RCX2 RCOSC
analog microelectronics
Analog Microelectronics GmbH
An der Fahrt 13, D – 55124 Mainz
Internet: http://www.analogmicro.de
Phone: +49 (0)6131/91 073 – 0
Fax:
+49 (0)6131/91 073 – 30
E–Mail: info@analogmicro.de
January 2001
1/6
Rev. 2.1
Converter IC for Capacitive Signals
ELECTRICAL SPECIFICATIONS
T
amb
= 25°C,
V
CC
= 24V,
I
REF
= 1mA (unless otherwise noted)
Parameter
Supply
Supply Voltage
Quiescent Current
Temperature Specifications
Operating
Storage
Junction
Thermal Resistance
T
amb
T
st
T
j
Θ
ja
Θ
ja
Reference Oscillator
Oscillator Capacitor Range
Oscillator Frequency Range
Oscillator Current
Capacitive Integrator 1 and 2
Capacitor Range 1
Capacitive Integrator Current 1
Capacitor Detection Sensitivity
Capacitor Range 2
Capacitive Integrator Current 2
Detection Frequency
Lowpass
Adjustable Gain
Output Voltage
Corner Frequency 1
Corner Frequency 2
Resistive Load at PIN
LPOUT
Capacitive Load at PIN
LPOUT
Temperature Coefficient
V
DIFF
(together
with Input Stages)
Internal Resistor 1 and 2
Temperature Coefficient
R
01,02
Power Supply Rejection Ratio
(together with Input Stages)
Voltage Reference
V
REF
Voltage
Current
V
REF
vs. Temperature
Line Regulation
V
REF
I
REF
dV
REF
/dT
dV
REF
/dV
dV
REF
/ dV
Load Regulation
dV
REF
/dI
dV
REF
/dI
Load Capacitance
C
REF
I
REF
4mA
1.9
T
amb
= –40...+85°C
Vcc
= 6V...35V
Vcc
= 6V...35V,
I
REF
4mA
4.75
0
±90
30
60
0.05
0.06
2.2
5
G
LP
V
LPOUT
f
C1
f
C2
R
LOAD
C
LOAD
dV
DIFF
/dT
R
01
, R
02
dR
01,02
/dT
PSRR
T
amb
= –40 ... 85°C
I
OUT
1mA
80
V
DIFF
=
V
LPOUT
-
V
M
,
T
amb
= –40 ... 85°C
±100
20
1.9
90
R
01
= 20kΩ,
C
L1
=1nF
R
02
= 20kΩ,
C
L2
=1nF
200
1
V
M
–0.4
C
X1
I
X1
C
X
C
X2
I
X2
f
DET
R
CX1
= 400kΩ
C
X
= (C
X2
C
X1
)/C
X1
C
X2
=
C
X1
(1 +
C
X
)
R
CX2
= 400kΩ
C
L1
=
C
L2
=1nF
10
4.75
5
10.5
4.75
5
5
C
OSC
f
OSC
I
OSC
R
OSC
= 200kΩ
C
OSC
= 1.6
C
X1
14
1
9.5
10
DIL16 plastic package
SO16 (n) plastic package
70
140
–40
–55
V
CC
I
CC
T
amb
= –40 ... 85°C,
I
REF
= 0mA
6
1.55
Symbol
Conditions
Min.
Typ.
CAV414
Max.
Unit
35
2.7
V
mA
85
125
150
°C
°C
°C
°C/W
°C/W
1800
130
10.75
pF
kHz
µA
1000
5.38
100
2000
5.38
2
pF
µA
%
pF
µA
kHz
10
V
M
+0.4
10
10
V
kHz
kHz
kΩ
50
pF
ppm/°C
kΩ
10
-3
/°C
dB
5.25
9
±140
80
150
0.10
0.15
5.0
V
mA
ppm/°C
ppm/V
ppm/V
%/mA
%/mA
µF
analog microelectronics
January 2001
2/6
Converter IC for Capacitive Signals
Parameter
Voltage Reference
V
M
Voltage
V
M
vs. Temperature
Current
V
M
dV
M
/dT
I
VM
I
VM
Load Capacitance
Instrumentation Amplifier Input Stage
Internal Gain
Differential Range
Common Mode Input Range
G
IA
V
IN
CMIR
CMIR
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Offset Voltage
V
OS
vs. Temperature
Output Stage
Adjustable Gain
Input Range
G
OP
IR
IR
Power Supply Rejection Ratio
Offset Voltage
V
OS
vs. Temperature
Input Bias Current
I
B
vs. Temperature
Output Voltage Range
PSRR
V
OS
dV
OS
/dT
I
B
dI
B
/dT
V
OUT
V
OUT
Output Current Limitation
Output Current
Load Resistance
Load Capacitance
Protection Functions
Protection Against Reverse Polarity
Ground
vs.
V
CC
vs.
V
OUT
I
LIM
I
OUT
R
L
C
L
V
CC
< 19V
V
CC
19V
V
CC
10V
0
0
5
0
2
7
V
CC
< 11V
V
CC
11V
I
OUT
1mA
1
0
0
80
90
±0.5
±3
10
7
CMRR
PSRR
V
OS
dV
OS
/dT
I
OUT
1mA
V
CC
< 9V,
I
CV
< 2mA
V
CC
9V,
I
CV
< 2mA
4.9
0
1.5
1.5
80
80
90
90
±1.5
±5
5
C
VM
T
amb
= –40...+85°C
Source
Sink
80
100
1.90
2
±90
Symbol
Conditions
Min.
Typ.
CAV414
Max.
Unit
2.15
V
ppm/°C
µA
µA
nF
5
-5
120
5.1
400
V
CC
- 3
6.0
mV
V
V
dB
dB
±6
mV
µV/°C
V
CC
- 5
6
V
V
dB
±2
±7
25
20
V
CC
- 5
14
10
I
LIM
500
mV
µV/°C
nA
pA/°C
V
V
mA
mA
kΩ
nF
35
V
Note:
1) The oscillator capacity has to be chosen in the following way:
C
OSC
= 1.6
C
X1
2) The capacitor range of
C
X1
and
C
X2
can be extended whereby the system performance is reduced and the electrical
limits are exceeded.
3) Currents flowing into the IC, are negative.
analog microelectronics
January 2001
3/6
Converter IC for Capacitive Signals
BOUNDARY CONDITIONS
Parameter
Current Definition of Ref. Oscillator
Current Adjustment of Cap. Integrator 1
Current Adjustment of Cap. Integrator 2
Lowpass Stage Resistor Sum
Output Stage Resistor Sum
Reference Voltage 5V
Reference Voltage 2V (only for internal use)
Lowpass Capacitance 1
Lowpass Capacitance 2
Oscillator Capacitance
Symbol
R
COSC
R
CX1
R
CX2
R
L1
+ R
L2
R
1
+ R
2
C
REF
C
VM
C
L1
C
L2
C
OSC
Min.
190
350
350
90
90
1.9
80
100⋅C
X1
100⋅C
X1
C
OSC
=1.55⋅C
X1
2.2
100
200⋅C
X1
200⋅C
X1
C
OSC
=1.60⋅C
X1
Typ.
200
400
400
CAV414
Max.
210
450
450
200
200
5
120
Unit
kΩ
kΩ
kΩ
kΩ
kΩ
µF
nF
C
OSC
=1.65⋅C
X1
Note:
The system performance over temperature forces that the resistors
R
CX1
,
R
CX2
and
R
OSC
have the same temperature
coefficient and a very close placement of them in the circuit. The capacities
C
X1
,
C
X2
and
C
OSC
are also forced to
have the same temperature coefficient and a very close placement of them in the circuit.
FUNCTIONAL DIAGRAM
12
C
OSC
16
C
X1
14
C
X2
Reference
Oscillator
V
CX1
V
CX2
CAV414
V
LPOUT
V
M
9
8
R
1
7
R
2
10
VCC
OUT
IA
V
DIFF
Integrator 1
Integrator 2
OP
Signal Conditioning
V
CX,DIFF
GND
Voltage/Current
Reference
11
C
REF
R
01
15
C
L1
R
02
13
C
L2
4
R
L1
R
L2
5
6
C
VM
2
R
CX1
3
R
CX2
1
R
OSC
Figure 2
analog microelectronics
January 2001
4/6
Converter IC for Capacitive Signals
FUNCTIONAL DESCRIPTION
CAV414
A reference oscillator with a frequency adjusted by the capacity
C
OSC
drives two symmetrically built
integrators synchronously to its clock and its phase. The capacitors
C
X1
and
C
X2
determine the am-
plitude of the two driven integrators. The difference of the integrator amplitudes gives the relative
change of the capacities
C
X1
and
C
X2
to each other with high common mode rejection and high
resolution. The difference signal is conditioned by a lowpass filter. The corner frequency and gain
of it can be adjusted with a few external components. The output of the lowpass filter is connected
to an instrumentation amplifier and an output stage. These two stages transform the signal into an
adjustable voltage.
Adjustment:
The zero-adjustment is made by the resistors
R
CX1
or
R
CX2
for the case that the varying capacitance
C
X2
has nearly the same (and its smallest) value as the fixed capacitance
C
X1
(reference capacitance).
Therefore one of this resistors is varied until the differential voltage
V
DIFF
=
V
LPOUT
V
M
is zero:
V
DIFF
=
0
Application Example:
The following values are given:
fixed capacitance
C
X1
:
varying capacitance
C
X2
:
Calculation:
With the equations given in the boundary conditions, the following values for the devices can be
calculated:
C
OSC
:
C
L1
:
C
L2
:
80pF
10nF
10nF
50pF
50 ... 100pF
If the signal
V
DIFF
is amplified, it has to fulfil the unequation:
V
DIFF
400mV
Detailed calculations are shown in a separately available
Application Note.
analog microelectronics
January 2001
5/6
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