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CBD1060LCT

肖特基二极管

器件类别:分立半导体    二极管   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
强茂(PANJIT)
零件包装代码
TO-220AB
包装说明
ROHS COMPLIANT, PLASTIC PACKAGE-2
针数
3
Reach Compliance Code
not_compliant
ECCN代码
EAR99
其他特性
LOW POWER LOSS
应用
EFFICIENCY
配置
COMMON CATHODE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
TO-220AB
JESD-30 代码
R-PSFM-T3
最大非重复峰值正向电流
125 A
元件数量
2
相数
1
端子数量
3
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
5 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度(摄氏度)
NOT SPECIFIED
最大重复峰值反向电压
60 V
表面贴装
NO
技术
SCHOTTKY
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
CBD1060LCT
LOW VF SCHOTTKY RECTIFIER
VOLTAGE
FEATURES
• Low forward voltage drop, low power losses
• High efficiency operation
• In compliance with EU RoHS 2002/95/EC directives
0.419(10.66)
0.387(9.85)
0.139(3.55)
MIN.
0.196(5.00)
0.163(4.16)
0.054(1.39)
0.045(1.15)
60 Volts
CURRENT
10 Amperes
MECHANICAL DATA
Case : TO-220AB, Plastic
PRELIMINARY
0.624(15.87)
0.548(13.93)
Weight: 0.0655 ounces, 1.859 grams.
0.038(0.96)
0.019(0.50)
0.177(4.5)
MAX.
0.058(1.47)
0.042(1.07)
0.50(12.7)MIN.
Terminals : Solderable per MIL-STD-750, Method 2026
0.115(2.92)
0.080(2.03)
0.025(0.65)MAX.
0.100(2.54)
0.100(2.54)
MAXIMUM RATINGS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range
per device
per diode
per diode
(Note 1)
SYMBOL
V
RRM
I
F(AV)
I
FSM
R
Θ
JC
T
J
T
STG
VALUE
60
10
5
125
2.2
-55 to + 150
-55 to + 150
o
UNIT
V
A
A
C/W
o
C
C
o
ELECTRICAL CHARACTERISTICS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Breakdown voltage per diode
SYMBOL
V
BR
TEST CONDITIONS
I
R
=1mA
I
F
=1A
I
F
=2A
I
F
=5A
I
F
=1A
I
F
=2A
I
F
=5A
V
R
=48V
Reverse current per diode
I
R
V
R
=60V
T
J
=25
o
C
T
J
=125
o
C
T
J
=25 C
o
MIN.
60
-
-
-
-
-
-
-
-
-
TYP.
-
0.41
0.45
0.54
0.29
0.35
0.48
3.73
-
6.8
MAX.
-
-
-
0.6
-
-
-
-
30
-
UNIT
V
V
Instantaneous forward voltage per diode
V
F
T
J
=125
o
C
V
μA
μA
mA
Note : 1. Mounted on infinite heatsink.
October 28,2011-REV.00
PAGE . 1
CBD1060LCT
C
J
, Junction Capacitance (pF)
I
F
, Forward Current (A)
5
4
3
2
1
Per Diode
0
0
25
50
75
100
125
150
10000
1000
100
10
Per Diode
1
0.1
1
10
100
PRELIMINARY
T
C
, Case Temperature (°C)
V
R
, Reverse Bias Voltage (V)
Fig.1 Forward Current Derating Curve
100
Fig.2 Typical Junction Capacitance
I
R
, Reverse Current (mA)
I
F
, Forward Current (A)
T
J
= 150°C
10
1
T
J
= 125°C
0.1
0.01
0.001
0.0001
20
40
60
80
100
Per Diode
T
J
= 25°C
T
J
= 75°C
10
T
J
= 150°C
T
J
= 125°C
1
Per Diode
T
J
= 25°C
T
J
= 75°C
0.1
0
0.2
0.4
0.6
0.8
Percent of Rated Peak Reverse Voltage (%)
V
F
, Forward Voltage (V)
Fig.3 Typical Reverse Characteristics
Fig.4 Typical Forward Characteristics
October 28,2011-REV.00
PAGE . 2
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