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CESD7V0D5

Trans Voltage Suppressor Diode, 200W, 7V V(RWM), Unidirectional, 1 Element, Silicon,

器件类别:分立半导体    二极管   

厂商名称:长电科技(JCET)

厂商官网:http://www.cj-elec.com/

器件标准:

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-523 Plastic-Encapsulate Diodes
CESD7V0D5
ESD Protection Diode
SOD-523
+
DESCRIPTION
The CESD7V0D5 is designed to protect voltage sensitive
components from ESD. Excellent clamping capability, low leakage,
and fast response time provide best in class protection on designs that
are exposed to ESD. Because of its small size, it is suited for use in
cellular phones, MP3 players, digital cameras and many other portable
applications where board space is at a premium.
FEATURES
Stand−off Voltage: 3.3 V−12 V
Low Leakage
Response Time is Typically < 1 ns
ESD Rating of Class 3 (> 16 kV) per Human Body Model
IEC61000−4−2 Level 4 ESD Protection
These are Pb−Free Devices
Maximum Ratings @Ta=25℃
Parameter
IEC61000−4−2(ESD)
ESD
Voltage
Air
Contact
Per
Human Body Model
Per
Machine Model
P
D
R
ΘJA
T
L
T
j,
T
stg
Symbol
Limit
±30
±30
16
400
150
833
260
-55 ~ +150
Unit
KV
KV
V
mW
℃/W
Total
Power Dissipation
on FR-5
Board
(Note 1)
Thermal Resistance Junction−to−Ambient
Lead Solder Temperature
Maximum (10 Second Duration)
Junction and Storage
Temperature Range
Stresses exceeding
maximum ratings
may damage the device. Maximum
ratings
are stress ratings only.
Functional operation above the
recommended.
Operating
conditions
is not implied. Extended exposure to
stresses above the
recommended operating conditions
may affect device reliability.
Note
1. FR−5 = 1.0 x 0.75 x 0.62 in.
A,May,2011
ELECTRICAL CHARACTERISTICS
(Ta = 25°C unless otherwise noted)
Symbol
I
PP
V
C
V
RWM
I
R
V
BR
I
T
I
F
V
F
P
pk
C
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Forward Current
Forward Voltage @ I
F
Peak Power Dissipation
Max. Capacitance @V
R
=0 and f =1MHz
ELECTRICAL CHARACTERISTICS
(Ta = 25°C unless otherwise noted,
V
F
= 0.9 V Max. @ I
F
= 10mA for all types)
V
C
I
R
(μA)
Device
Device*
Marking
Max
CESD3V3D5
CESD5V0D5
CESD7V0D5
CESD12VD5
Max
Min
Max
mA
V
RWM
(V)
@ V
RWM
V
BR
(V)
@ I
T
(Note 2)
I
T
@I
PP
+
=
5A
V
Max
Max
Max
Typ
I
PP
(A)
+
I
PP
+
V
C
(V) @Max
P
pk +
(W)
C (pF)
ZE
ZF
ZH
ZM
3.3
5.0
7.0
12
0.08
0.08
0.03
0.02
5.0
6.2
7.5
14.1
5.9
7.3
8.7
15.7
1.0
1.0
1.0
1.0
9.4
11.6
13.5
23
11.2
9.4
8.8
9.6
14.1
18.6
22.7
29
158
174
200
240
105
80
65
55
*Other voltages available upon request.
+Surge current waveform per Figure 1.
Note
2. V
BR
is measured with a pulse test current I
T
at an ambient temperature of 25°C.
A,May,2011
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