JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-553 Plastic-Encapsulate Diodes
CESDLC5V0L4
SOT-553
Low Capacitance
Quad Array
for ESD Protection
DESCRIPTION
The CESDLC5V0L4 is designed to protect voltage sensitive components from
ESD. Excellent clamping capability, low leakage, and fast response time provide
best in class protection on designs that are exposed to ESD. Because of its
small size, it is suited for use in cellular phones, MP3 players, digital cameras
and many other portable applications where board space is at a premium.
FEATURES
Four Separate Unidirectional Configurations for Protection
Low Leakage Current <1μA @
5
Volts
Small Package
Low Capacitance
Complies to USB 1.1 Low Speed & Full Speed Specifications
These are Pb-Free Devices
BENEFITS
Protects Four Lines Against Transient Voltage Conditions
Minimize Power Consumption of the System
Minimize PCB Board Space
TYPICAL APPLICATIONS
Instrumentation Equipment
Serial and Parallel Ports
Microprocessor Based Equipment
Notebooks, Desktops, Servers
Cellular and Portable Equipment
1
2
3
5
4
A,Jun,2011
ELECTRICAL CHARACTERISTICS
(Ta = 25℃ unless otherwise noted)
Symbol
I
PP
V
C
V
RWM
I
R
V
BR
I
T
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Maximum Ratings (Ta=25℃
unless otherwise noted)
Parameter
Symbol
Limit
20
150
833
150
-55 ~ +150
260
Unit
W
mW
℃/W
℃
℃
℃
Peak Power Dissipation @ 8 X 20
μs
@T
A
= 25°C (Note 1)
Steady State Power -- 1 Diode (Note 2)
Thermal Resistance Junction−to−Ambient
Above 25 °C, derate
Maximum
Junction Temperature
Operating Junction and Storage
Temperature Range
Lead Solder Temperature (10 Seconds Duration)
P
pk
P
D
R
ΘJA
T
jmax
T
j,
T
stg
T
L
Stresses exceeding
maximum ratings
may damage the device. Maximum
ratings
are stress
ratings only. Functional operation above the
recommended.
Operating
conditions
is not implied.
Extended exposure to stresses above the
recommended operating conditions
may affect device
reliability.
ELECTRICAL CHARACTERISTICS
(Ta = 25°C unless otherwise noted, V
F
= 0.9 V Max. @ I
F
= 10mA for all types)
Breakdown
voltage
V
BR
@ 1mA(Volts)
Min
CESDLC5V0L4
5H
6.0
Mon
6.5
Max
7.2
Leakage
current
I
RM
@ V
RM
V
RWM
5.0
I
RWM
(μA)
1.0
Capacitance
V
C
Max @I
PP
V
C
(V)
11
I
PP
(A)
1.6
@V
R
=0V
Bias
Capacitance
@V
R
=3V
Bias
Device
Device
Marking
(pF)
(Note 3)
Max
14
(pF)
(Note 3)
Max
11.5
1. Non-repetitive current per Figure 1.
2. Only 1 diode under power. For all 4 diodes under power, P
D
will be 25%. Mounted on FR-4 board with min pad.
3. Capacitance of one diode at f = 1MHz, Ta = 25°C
A,Jun,2011
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