CMPFCD86
PFC Diode
(8A/600V)
FEATURES
Fast switching for high efficiency
Low noise
Trr
~
25ns
Ultra low reverse leakage current
High voltage ultra faster diode PFC
application
High inrush current
K
A
K
A
(TO-220FP)
CMPFCD86 (TO-220AC)
K
CMPFCD86
NC
A
A
K
MECHANICAL DATA
Case : Molded plastic TO-220AC /
TO-220FP
Epoxy : UL94V-0 rate flame retardant
Terminals :
Solder able per MIL-STD-202
method 208
265℃ Max. for 10 Seconds
Maximum Mounting Torque 6 ( 5 )
Kg-cm( Ibf-in )
CMPFCD86 (TO-252/DPAK)
Primary Characteristics
I
F(AV)
V
RRM
V
F(typ)
I
R(typ)
T
j
8A
600 V
1.5 V
10
μA
175
℃
ORDERING INFORMATION
Part Number
CMPFCD86XN220*
CMPFCD86GN220*
CMPFCD86XN220FP*
CMPFCD86GN220FP*
CMPFCD86XN252*
*Note : G : Suffix for Pb Free Product
X : Suffix for Halogen Free
*Note : N : TO
Temperature Range
-55℃ to 175℃
-55℃ to 175℃
-55℃ to 175℃
-55℃ to 175℃
-55℃ to 175℃
Package
TO-220AC
TO-220AC
TO-220FP
TO-220FP
TO-252
Application Circuit
AC INPUT
CMPFCD86
EMI FILTER
-
+
CMT14N60
PFC(CCM) Controller
CM65XX
CM68XX Family
CM6805
2013/12/06 Rev1.7
Champion Microelectronic Corporation
Page 1
CMPFCD86
PFC Diode
(8A/600V)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave , 60Hz , resistive or inductive load.
For capacitive load , derate current by 20%
CMPFCD86
Rating
V
RRM
V
DC
IF
(AV)
Recurrent Peak Reverse Voltage
DC Blocking Voltage
Average Forward Rectified Current @Tc=140℃
Peak Forward Surge Current
I
FSM
8.3ms single half sine-wave
Super imposed on rated load (JEDEC Method)
I
FSM
I
FSM
I
FSM
I
FSM
I t
V
F
2
Symbol
Characteristics
Unit
V
V
A
600
600
8
90
A
Peak Forward Surge Current
4ms single half sine-wave
Peak Forward Surge Current
1ms single half sine-wave
Peak Forward Surge Current 4ms single
Square-wave superimposed on rated load
Peak Forward Surge Current 1.0ms single
Square-wave superimposed on rated load (JEDEC Method)
I t Value For Fusing
Instantaneous Forward Voltage (Typical) @8A
DC Reverse Current
At Rated DC Blocking Voltage
Maximum Reverse Recovery Time
2
110
200
90
150
91
1.5
1.25
10
45
A
A
A
A
A s
V
2
Tp=10ms
T
J
=25℃
T
J
=125℃
T
J
=25℃
T
J
=150℃
I
R
uA
Trr
Test Conditions : I
F
=0.5A , Ir=1.0A , Irr=0.25A
Test Conditions : I
F
=1A, dI
F
/dt = -50A/uS, V
R
=30V
25
35
36
TO-220AC
2.2
4.6
-55~+175
-55~+175
nS
pF
℃/
W
C
J
R
θJC
Typical Junction Capacitance
(note1)
Typical Thermal Resistance
(note2)
TO-252
TO-220FP
T
J
T
STG
Operating Temperature Range
Storage Temperature Range
TO-220AC
℃
℃
60
50
80
℃
R
θJA
Typical Thermal Resistance
TO-220FP
TO-252
Notes :
1. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts DC.
2. Thermal Resistance junction to case.
2013/12/06 Rev1.7
Champion Microelectronic Corporation
Page 2
CMPFCD86
PFC Diode
(8A/600V)
TYPICAL CHARACTERISTICS
Figure 1. Typical Forward voltage V.S current
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
Figure 2. Typical Reverse Characteristics per Diode
9
δ
=0.1
δ
=0.2
δ
=0.5
δ
=1
8
7
6
δ
=0.5 per Diode
R
th(j-a)
= 2.5 C/W
o
I
F(av)
(A)
P
F(av)
(W
)
5
4
3
2
1
R
th(j-a)
= 15 C/W
o
R
th(j-a)
= 4.5 C/W
o
T
R
th(j-a)
= 75 C/W
o
tp
δ
=tp/T
0
0
10 20 30 40
50 60 70 80 90 100 110 120 130 140 150 160 170 180
I
F(av)
(A)
Case Temperature ( C)
o
Figure 3. Average Forward Power Dissipation per Diode
Figure 4. Current derating Curves
T=25 C
Junction Capacitance (pF)
100
o
f=1.0MHz
Vsig= 20mVp-p
180
150
IF S M (A )
120
90
60
30
0
25℃
125℃
10
0.1
1
1
10
100
4
Time(mS)
8.3
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
250
200
IF S M (A )
150
100
50
0
1
4
Time(mS)
8.3
25℃
125℃
Figure 6. Peak forward surge current (square-wave)
Figure 7. Peak forward surge current (single half sine wave)
2013/12/06 Rev1.7
Champion Microelectronic Corporation
Page 3
CMPFCD86
PFC Diode
(8A/600V)
PACKAGE DIMENSION
2013/12/06 Rev1.7
Champion Microelectronic Corporation
Page 4
CMPFCD86
PFC Diode
(8A/600V)
IMPORTANT NOTICE
Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated
circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before
placing orders, that the information being relied on is current.
A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or
environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use
in life-support applications, devices or systems or other critical applications.
customer should provide adequate design and operating safeguards.
Use of CMC products in such applications is
understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the
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HsinChu City, Taiwan
T E L : +886-3-567 9979
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http://www.champion-micro.com
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2013/12/06 Rev1.7
Champion Microelectronic Corporation
Page 5
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