CMT01N60
P
OWER
F
IELD
E
FFECT
T
RANSISTOR
GENERAL DESCRIPTION
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. In addition, this
advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited
for
bridge
circuits
where
diode
speed
and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
FEATURES
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS
and V
DS
(on) Specified at Elevated Temperature
PIN CONFIGURATION
TO-251
TO-92
SYMBOL
Front View
SOURCE
Front View
D
SOURCE
GATE
DRAIN
GATE
DRAIN
G
S
N-Channel MOSFET
1
2
3
1
2
3
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current
－
TO-251(Continuous)
TO-92 (Continuous)
－
Pulsed
Gate-to-Source Voltage
－
Continue
－
Non-repetitive
Total Power Dissipation
TO-251
TO-92
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy
－
T
J
= 25℃
(V
DD
= 100V, V
GS
= 10V, I
AS
= 2A, L = 10mH, R
G
= 25Ω)
Thermal Resistance
－
Junction to Case
－
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
θ
JC
θ
JA
T
L
1.0
62.5
260
℃
℃/W
T
J
, T
STG
E
AS
P
D (MAX)
30
3
-55 to 150
20
℃
mJ
W
I
DM
V
GS
V
GSM
Symbol
I
D
Value
1.0
0.5
2.0
±30
±40
V
V
A
Unit
2010/12/01
Rev. 1.7
Champion Microelectronic Corporation
Page 1
CMT01N60
P
OWER
F
IELD
E
FFECT
T
RANSISTOR
ORDERING INFORMATION
Part Number
CMT01N60GN251
CMT01N60XN251*
CMT01N60GN92
CMT01N60XN92*
*
Note:
G : Suffix for Pb Free Product
X : Suffix for Halogen Free Product
Package
TO-251
TO-251
TO-92
TO-92
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, T
J
= 25℃.
CMT01N60
Typ
Characteristic
Drain-Source Breakdown Voltage
(V
GS
= 0 V, I
D
= 250
μA)
Drain-Source Leakage Current
(V
DS
= 600 V, V
GS
= 0 V)
(V
DS
= 480 V, V
GS
= 0 V, T
J
= 125℃)
Gate-Source Leakage Current-Forward
(V
gsf
= 30 V, V
DS
= 0 V)
Gate-Source Leakage Current-Reverse
(V
gsr
=- 30 V, V
DS
= 0 V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250
μA)
Static Drain-Source On-Resistance (V
GS
= 10 V, I
D
= 0.5A) *
TO-251
TO-92
Forward Transconductance (V
DS
≧
50 V, I
D
= 0.5A) *
Input Capacitance
(V
DS
= 25 V, V
GS
= 0 V,
Output Capacitance
f = 1.0 MHz)
Reverse Transfer Capacitance
Turn-On Delay Time
(V
DD
= 300 V, I
D
= 1.0 A,
Rise Time
V
GS
= 10 V,
Turn-Off Delay Time
R
G
= 18Ω) *
Fall Time
Total Gate Charge
(V
DS
= 400 V, I
D
= 1.0 A,
Gate-Source Charge
V
GS
= 10 V)*
Gate-Drain Charge
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond
pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
(I
S
= 1.0 A, V
GS
= 0 V,
Forward Turn-On Time
d
IS
/d
t
= 100A/μs)
Reverse Recovery Time
* Pulse Test: Pulse Width
≦300μs,
Duty Cycle
≦2%
** Negligible, Dominated by circuit inductance
Symbol
V
(BR)DSS
Min
600
Max
Units
V
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
L
D
L
S
320
210
28
4.2
8
21
18
24
8.5
1.8
4
4.5
7.5
2.0
1
3
100
100
4.0
11
uA
nA
nA
V
Ω
mhos
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nH
nH
V
SD
t
on
t
rr
1.5
**
350
V
ns
ns
2010/12/01
Rev. 1.7
Champion Microelectronic Corporation
Page 2
CMT01N60
P
OWER
F
IELD
E
FFECT
T
RANSISTOR
TYPICAL ELECTRICAL CHARACTERISTICS
2010/12/01
Rev. 1.7
Champion Microelectronic Corporation
Page 3
CMT01N60
P
OWER
F
IELD
E
FFECT
T
RANSISTOR
2010/12/01
Rev. 1.7
Champion Microelectronic Corporation
Page 4
CMT01N60
P
OWER
F
IELD
E
FFECT
T
RANSISTOR
PACKAGE DIMENSION
TO-251
2010/12/01
Rev. 1.7
Champion Microelectronic Corporation
Page 5
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