JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
D882H
TRANSISTOR (NPN)
SOT-89-3L
FEATURE
Low V
CE(sat)
Large current capacity
1. BASE
2. COLLECTOR
3. EMITTER
MAKING: D882H
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Value
70
70
6
3
500
250
150
-55½+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
Test
conditions
Min
70
70
6
1
10
1
60
400
0.5
1.5
50
V
V
MHz
Typ
Max
Unit
V
V
V
µA
µA
µA
= 0
I
C
=100µA, I
E
V
(BR)CBO
= 0
I
C
=10mA, I
B
V
(BR)CEO
= 0
I
E
=100µA, I
C
V
(BR)EBO
= 0
V
CB
=40V, I
E
I
CBO
= 0
V
CE
=30V, I
B
I
CEO
= 0
V
EB
=6V, I
C
I
EBO
= 1A
V
CE
=2V, I
C
h
FE
V
CE(sat)
f
T
I
C
=2A, I
B
= 0.2A
V
CE
=5V,I
C
0.1A,f 10MHz
=
=
= 0.2A
I
C
=2A, I
B
V
BE(sat)
CLASSIFICATION of h
FE
Rank
Range
R
60-120
O
100-200
Y
160-320
GR
200-400
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,2015
Typical Characteristics
Static Characteristic
2000
1000
h
FE
——
I
C
(mA)
4.8mA
4mA
1200
I
C
DC CURRENT GAIN
h
FE
1600
COMMON
EMITTER
T
a
=25
℃
8mA
7.2mA
6.4mA
5.6mA
T
a
=100
℃
COLLECTOR CURRENT
T
a
=25
℃
100
3.2mA
800
2.4mA
400
1.6mA
I
B
=0.8mA
V
CE
= 2V
8
10
1
10
100
1000
3000
0
0
2
4
6
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
1000
V
CEsat
——
I
C
2000
V
BEsat
——
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
1000
100
T
a
=25
℃
T
a
=100
℃
10
T
a
=100
℃
T
a
=25
℃
β=10
1
1
10
100
1000
3000
100
1
10
100
1000
β=10
3000
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURREMT
I
C
(mA)
3000
I
C
——
V
BE
1000
C
ob
/C
ib
——
V
CB
/V
EB
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
1000
(mA)
I
C
(pF)
C
ib
100
COLLECTOR CURRENT
CAPACITANCE
T=
a
25
℃
100
T=
a
10
0
℃
C
C
ob
10
10
COMMON EMITTER
V
CE
= 2V
1
200
400
600
800
1000
1200
1
0.1
1
10
20
BASE-EMMITER VOLTAGE V
BE
(mV)
REVERSE VOLTAGE
V
(V)
600
P
C
——
T
a
COLLECTOR POWER DISSIPATION
P
C
(mW)
500
400
300
200
100
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
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D,Nov
,2015
SOT-89-3L Package Outline Dimensions
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
Dimensions In Millimeters
Max
Min
1.400
1.600
0.320
0.520
0.400
0.580
0.350
0.440
4.400
4.600
1.550 REF.
2.300
2.600
3.940
4.250
1.500 TYP.
3.000 TYP.
0.900
1.200
Dimensions In Inches
Min
Max
0.055
0.063
0.013
0.020
0.016
0.023
0.014
0.017
0.173
0.181
0.061 REF.
0.091
0.102
0.155
0.167
0.060 TYP.
0.118 TYP.
0.035
0.047
SOT-89-3L Suggested Pad Layout
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D,Nov
,2015
SOT-89-3L Tape and Reel
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B
D,Nov
,2015
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