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DK4448CLLD03

开关二极管

器件类别:分立半导体   

厂商名称:长电科技(JCET)

厂商官网:http://www.cj-elec.com/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03D Plastic-Encapsulate Diodes
DK4448CLLD03
DESCRIPTION
Epitaxial planar
silicon
diode
FEATURES
Fast Switching Speed
Ultra-Small Surface Mount Package
For General Purpose Switching Applications
High Conductance
Lead Free Product
APPLICATION
High Conductance Ultra Fast Diode
For
Portable Equipment:(i.e.
Mobile
Phone,MP3,
MD,CD-ROM,
DVD-ROM, Note
Book
PC, etc.)
MARKING:
-
A7
WBFBP-03D
SWITCHING DIODE
(1.0×1.0×0.5)
unit: mm
-
TOP
+
+
1. ANODE
2. ANODE
3. CATHODE
-
BACK
+
3
1
2
+
A7
+
+
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25
Parameter
Non-Repetitive Peak
Reverse Voltage
Peak Repetitive Peak
Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Peak
Forward Surge Current
@t=1.0μs
@
t=1.0s
Power Dissipation
Thermal Resistance Junction to Ambient
Storage
Temperature
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FSM
P
D
R
θJA
T
STG
Limit
100
80
57
500
250
4.0
2.0
100
1250
-55
~+150
Unit
V
V
V
mA
mA
A
mW
℃/W
A,May,2011
Electrical Ratings @Ta=25℃
Parameter
Reverse
breakdown voltage
Symbol
V
R
V
F1
Forward voltage
V
F2
V
F3
V
F4
Reverse current
Capacitance between terminals
Reverse
recovery time
I
R1
I
R2
C
T
t
rr
Min
80
0.62
0.72
0.855
1.0
1.25
0.1
25
3.5
4
Typ
Max
Unit
V
V
V
V
V
μA
nA
pF
ns
Conditions
I
R
=2.5μA
I
F
=5mA
I
F
=10mA
I
F
=100mA
I
F
=150mA
V
R
=70V
V
R
=20V
V
R
=6V,f=1MHz
V
R
=6V,I
F
=5mA
A,May,2011
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