JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03B Plastic-Encapsulate Diodes
-
WBFBP-03B
DKN222NND03
DESCRIPTION
Epitaxial planar
silicon
diode
SWITCHING DIODE
(1.2×1.2×0.5)
unit: mm
TOP
1. ANODE
2. ANODE
3.CATHODE
+
+
-
BACK
FEATURES
High speed
Suitable for high packing density layout
High reliability
APPLICATION
Ultra high speed switching
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:
1
3
2
+
+
-
N
+ +
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25
℃
Parameter
Peak reverse voltage
DC reverse voltage
Maximum (peak) forward current
Average forward current
Power dissipation
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
FM
I
O
P
D
T
j
T
stg
Limit
80
80
300
100
150
150
-55~+150
Unit
V
V
mA
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reverse recovery time
Symbol
V
(BR)
I
R
V
F
C
D
t
rr
Test
conditions
Min
80
0.1
1.2
3.5
4
Max
Unit
V
μA
I
R
= 100
μ
A
V
R
=70V
I
F
=100mA
V
R
=6V, f=1MHz
V
R
=6V, I
F
=5mA
V
pF
ns
A,Jun,2011
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