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DTA114ECA

DIGITAL TRANSISTOR (PNP)数字晶体管(PNP)

器件类别:分立半导体   

厂商名称:长电科技(JCET)

厂商官网:http://www.cj-elec.com/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital transistors (built-in resistors)
DTA114EE/DTA114EUA/DTA114EKA
DTA114ESA/ DTA114ECA
DIGITAL TRANSISTOR (PNP)
FEATURES
1. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors(see equivalent circuit)
2. The bias resistors consist of thin-film resistors with complete isolation to allow
positive
biasing of the
input.They also have the advantage of almost completely eliminating parasitic effects
3. Only the on/off conditions need to be set for operation, making device design easy
PIN CONNENCTIONS AND MARKING
DTA114EE
DTA114EUA
SOT-523
Addreviated symbol: 14
SOT-323
Addreviated symbol: 14
DTA114EKA
DTA114ECA
SOT-23-3L
Addreviated symbol: 14
SOT-23
Addreviated symbol: 14
DTA114ESA
TO-92S
B,Jul,2011
Absolute maximum ratings(Ta=25
)
Parameter
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Symbol
V
CC
V
IN
I
O
I
C(MAX)
Pd
Tj
Tstg
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
30
7
0.8
10
1
250
13
1.2
MHz
V
CE
=-10V ,I
E
=5mA,f=100MHz
KΩ
Min
-0.5
-3
-0.3
-0.88
-0.5
Typ
150
Limits (DTA114E□)
E
UA
CA
-50
-40~10
-50
-100
200
150
-55~150
Max
Unit
V
V
mA
µA
Conditions
V
CC
=-5V ,I
O
=-100µA
V
O
=-0.3V ,I
O
=-10 mA
I
O
/I
I
=-10mA/-0.5mA
V
I
=-5V
V
CC
=-50V, V
I
=0
V
O
=-5V ,I
O
=-5mA
300
KA
SA
Unit
V
V
mA
mW
Electrical characteristics (Ta=25
)
B,Jul,2011
Typical Characteristics
-100
DTA114ECA
OFF Characteristics
ON Characteristics
V
O
=-0.3V
-10
-30
-3
(V)
V
I(ON)
-10
(mA)
-1
INPUT VOLTAGE
-3
T
a
=25
T
a
=100
OUTPUT CURRENT
I
O
-0.3
T
a
=100
T
a
=25
-1
-0.1
-0.3
-0.03
-0.1
-0.1
-0.3
-1
-3
-10
-30
-100
-0.01
-0.0
V
CC
=-5V
-0.4
-0.8
-1.2
-1.6
-2.0
OUTPUT CURRENT
I
O
(mA)
INPUT VOLTAGE
V
I(OFF)
(V)
1000
G
I
——
I
O
V
O
=-5V
-1000
V
O(ON)
——
I
O
I
O
/I
I
=20
300
(mV)
G
I
DC CURRENT GAIN
V
O(ON)
100
-300
OUTPUT VOLTAGE
30
T
a
=100
T
a
=25
-100
T
a
=100
T
a
=25
10
-30
3
1
-0.1
-0.3
-1
-3
-10
-30
-100
-10
-1
-3
-10
-30
-100
OUTPUT CURRENT
I
O
(mA)
OUTPUT CURRENT
I
O
(mA)
12
C
O
——
V
R
f=1MHz
T
a
=25
400
P
D
——
T
a
350
10
(pF)
(mW)
300
DTA114ESA
C
O
P
D
POWER DISSIPATION
8
250
OUTPUT CAPACITANCE
6
200
DTA114EUA/CA/KA
DTA114EE
150
4
100
2
50
0
0
4
8
12
16
20
0
0
25
50
75
100
125
150
REVERSE BIAS VOLTAGE
V
R
(V)
AMBIENT TEMPERATURE
T
a
(
)
B,Jul,2011
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