EMI5201D8
EMI5201D8
Http//:www.willsemi.com
8-Lines EMI Filter with Integrated ESD Protection
Descriptions
The EMI5201D8 is a low pass filter array with
integrated ESD protection diodes. The device is a
3-pole inductor – capacitor with a typical inductor value
of 17nH and a capacitor value of 12pF, to achieve
attenuation greater than -21dB from 800MHz to
6.0GHz.
This performance makes the device ideal for
protection of LCD panels in cellular phones and other
portable electronics. The specified attenuation range is
very effective in minimizing interference from 2G/3G,
GPS, Bluetooth and WLAN signals.
The EMI5201D8 is available in DFN3313-16L package.
Standard products are Pb-free and Halogen-free.
6
7
11
10
9
1
C
1
C
2
DFN3313-16L
16
15
14
13
12
2
3
4
5
Features
Working voltage
: 5V
8
Transient ESD protection
IEC61000-4-2 , Level 4 : ±15kV air
: ±12kV contact
Pin configuration (Top view)
Bidirectional EMI/RFI filter with integrated ESD
protection diodes
Filter
performance:
greater
than
-21dB
attenuation from 800MHz to 6.0GHz
Inductor of 17nH (typical)
Capacitor of 12pF (typical at VR=2.5V)
Protection for 8 lines.
5201
*
= Device code
= Month(A~Z)
Marking
DFN3313-16L
5201*
Applications
Wireless Handsets
EMI Flitering for LCD and Camera Data Lines
EMI Flitering for and Protection for I/O Ports and
Keypads
Device
EMI5201D8-16/TR
Order information
Package
DFN3313-16L
Shipping
3000/Tape&Reel
Will Semiconductor Ltd.
1
Dec, 2012 - Rev. 1.0
EMI5201D8
Absolute maximum ratings
Parameter
ESD voltage IEC61000-4-2 air
ESD voltage IEC61000-4-2 contact
Junction temperature
Operating temperature
Lead temperature
Storage temperature
Symbol
V
ESD
T
J
T
OP
T
L
T
STG
Rating
±15
±12
125
-40~85
260
-55~150
Unit
kV
o
o
o
o
C
C
C
C
Electronics characteristics
(Ta=25
o
C, unless otherwise noted)
Parameter
Reverse maximum working voltage
Reverse leakage current
Reverse breakdown voltage
Forward voltage
Resistance
Inductance
Diode Capacitance
Line Capacitance
3dB Cut-Off Frequency
1
Stop Band Attenuation
1. 50 _ source and 50 _ load termination
Symb
ol
V
RWM
I
R
V
BR
V
F
R
L
C
1
=C
2
C
T
f
3dB
F=1MHz, V
R
=2.5V
50mVAC
C
1
+ C
2
Above this frequency.
Appreciable attenuation
occurs
800 MHz to 6.0 GHz
21
dB
250
MHz
20
V
RWM
=5V
I
T
=1.0mA
I
F
=20mA
6.2
0.55
6.9
0.9
10
17
12
24
28
Condition
Min.
Typ.
Max.
5.0
1.0
7.6
1.25
Unit
V
uA
V
V
Ω
nH
pF
pF
110
100
90
80
70
60
50
40
30
20
10
0
Front times=1.25*( t90-t10) =8us
Peak Pulse Current (%)
Duration=20us
Peak Pulse Current (%)
100
90
10
30ns
tr=0.7~1ns
60ns
t
0
5
10
15
20
25
30
Peak Pulse time (us)
8/20us waveform
35
40
IEC61000-4-2 waveform
2
Dec, 2012 - Rev. 1.0
Will Semiconductor Ltd.
EMI5201D8
Typical characteristics
(Ta=25
o
C, unless otherwise noted)
5
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
S21(dB)
1000000
1E7
1E8
Freq(Hz)
1E9
1E10
Typical Insertion Loss Curve
50
C - Junction capacitance (pF)
45
40
35
30
25
20
15
10
0
1
2
3
4
5
F
signal
=1MHz
V
signal
=50mVrms
100
80
60
40
20
0
% of Rated power
0
25
50
75
100
o
125
150
V
R
- Reverse voltage (V)
T
A
- Ambient temperature ( C)
Capacitance vs. Reveres voltage
Power derating vs. Temperature
ESD clamping voltage
(IEC61000-4-2 +8kV contact)
ESD clamping voltage
(IEC61000-4-2 -8kV contact)
Will Semiconductor Ltd.
3
Dec, 2012 - Rev. 1.0
EMI5201D8
Package outline dimensions
DFN3313-16L
Symbol
A
A1
A3
D
E
D2
E2
L
b
e
Dimensions In Millimeters
Min.
＞0.50
0.00
3.25
1.30
2.45
0.25
0.17
0.15
Nom
0.55
-
0.15REF
3.30
1.35
2.60
0.40
0.27
0.20
0.40BSC
Recommend PCB Layout (Unit: mm)
3.35
1.40
2.70
0.50
0.37
.025
Max.
0.60
0.05
Will Semiconductor Ltd.
0.35
4
1.55
0.4
Dec, 2012 - Rev. 1.0
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