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EN25B16-100HIP

Flash Memory,

器件类别:存储    存储   

厂商名称:台湾晶豪(ESMT)

厂商官网:http://www.esmt.com.tw/

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包装说明
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EN25B16
EN25B16
16 Mbit Serial Flash Memory with Boot and Parameter Sectors
FEATURES
Single power supply operation
- Full voltage range: 2.7-3.6 volt
16 M-bit Serial Flash
- 16 M-bit/2048 K-byte/8192 pages
- 256 bytes per programmable page
High performance
- 100MHz clock rate
Low power consumption
- 5 mA typical active current
- 1
μA
typical power down current
Flexible Sector Architecture:
- Two 4-Kbyte, one 8-Kbyte, one 16-Kbyte,one
32-Kbyte, and thirty one 64-Kbyte sectors
Software and Hardware Write Protection:
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
-
-
-
-
High performance program/erase speed
Byte program time: 7µs typical
Page program time: 1.5ms typical
Sector erase time: 300 to 800ms typical
Chip erase time: 18 Seconds typical
Minimum 100K endurance cycle
Package Options
- 8 pins SOP 200mil body width
- 8 contact VDFN
- 8 pins PDIP
- 16 pin SOP 300mil body width
- All Pb-free packages are RoHS compliant
Commercial and industrial temperature
Range
GENERAL DESCRIPTION
The EN25B16 is a 16M-bit (2048K-byte) Serial Flash memory, with advanced write protection
mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to
256 bytes at a time, using the Page Program instruction.
The EN25B16 has thirty six sectors including thirty one sectors of 64KB, one sector of 32KB, one sector
of 16KB, one sector of 8KB and two sectors of 4KB. This device is designed to allow either single Sector
at a time or full chip erase operation. The EN25B16 can protect boot code stored in the small sectors for
either bottom or top boot configurations. The device can sustain a minimum of 100K program/erase cycles
on each sector.
This Data Sheet may be revised by subsequent versions
1
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. E, Issue Date: 2007/06/07
EN25B16
Figure.1 CONNECTION DIAGRAMS
8 - LEAD SOP / PDIP
8 - CONTACT VDFN
16 - LEAD SOP
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
2
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. E, Issue Date: 2007/06/07
EN25B16
Figure 2. BLOCK DIAGRAM
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
3
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. E, Issue Date: 2007/06/07
EN25B16
SIGNAL DESCRIPTION
Serial Data Input (DI)
The SPI Serial Data Input (DI) pin provides a means for instructions, addresses and data to be
serially written to (shifted into) the device. Data is latched on the rising edge of the Serial Clock (CLK)
input pin.
Serial Data Output (DO)
The SPI Serial Data Output (DO) pin provides a means for data and status to be serially read from (shifted
out of) the device. Data is shifted out on the falling edge of the Serial Clock (CLK) input pin.
Serial Clock (CLK)
The SPI Serial Clock Input (CLK) pin provides the timing for serial input and output operations. ("See SPI
Mode")
Chip Select (CS#)
The SPI Chip Select (CS#) pin enables and disables device operation. When CS# is high the device is
deselected and the Serial Data Output (DO) pin is at high impedance. When deselected, the devices
power consumption will be at standby levels unless an internal erase, program or status register cycle is
in progress. When CS# is brought low the device will be selected, power consumption will increase to
active levels and instructions can be written to and data read from the device. After power-up, CS# must
transition from high to low before a new instruction will be accepted.
Hold (HOLD#)
The HOLD pin allows the device to be paused while it is actively selected. When HOLD is brought low,
while CS# is low, the DO pin will be at high impedance and signals on the DI and CLK pins will be ignored
(don’t care). The hold function can be useful when multiple devices are sharing the same SPI signals.
Write Protect (WP#)
The Write Protect (WP#) pin can be used to prevent the Status Register from being written. Used in
conjunction with the Status Register’s Block Protect (BP0, BP1and BP2) bits and Status Register Protect
(SRP) bits, a portion or the entire memory array can be hardware protected.
Table 1. PIN Names
Symbol
CLK
DI
DO
CS#
WP#
HOLD#
Vcc
Vss
Pin Name
Serial Clock Input
Serial Data Input
Serial Data Output
Chip Enable
Write Protect
Hold Input
Supply Voltage (2.7-3.6V)
Ground
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
4
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. E, Issue Date: 2007/06/07
EN25B16
MEMORY ORGANIZATION
The memory is organized as:
2,097,152 bytes
Flexible Sector Architecture
Two 4-Kbyte, one 8-Kbyte, one 16-Kbyte,one 32-Kbyte, and thirty one 64-Kbyte sectors
Bottom or top boot configurations
8192 pages (256 bytes each)
Each page can be individually programmed (bits are programmed from 1 to 0). The device is Sector or
Bulk Erasable but not Page Erasable.
Table 2a.
Bottom Boot Block Sector Architecture
Sector
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
SECTOR SIZE (KByte)
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
32
16
8
4
4
Address range
1F0000h – 1FFFFFh
1E0000h – 1EFFFFh
1D0000h – 1DFFFFh
1C0000h – 1CFFFFh
1B0000h – 1BFFFFh
1A0000h – 1AFFFFh
190000h – 19FFFFh
180000h – 18FFFFh
170000h – 17FFFFh
160000h – 16FFFFh
150000h – 15FFFFh
140000h – 14FFFFh
130000h – 13FFFFh
120000h – 12FFFFh
110000h – 11FFFFh
100000h – 10FFFFh
0F0000h – 0FFFFFh
0E0000h – 0EFFFFh
0D0000h – 0DFFFFh
0C0000h – 0CFFFFh
0B0000h – 0BFFFFh
0A0000h – 0AFFFFh
090000h – 09FFFFh
080000h – 08FFFFh
070000h – 07FFFFh
060000h – 06FFFFh
050000h – 05FFFFh
040000h – 04FFFFh
030000h – 03FFFFh
020000h – 02FFFFh
010000h – 01FFFFh
008000h – 00FFFFh
004000h – 007FFFh
002000h – 003FFFh
001000h – 001FFFh
000000h – 000FFFh
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
5
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. E, Issue Date: 2007/06/07
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