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ER1000FCT_04

10 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB

器件类别:半导体    分立半导体   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

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DATA SHEET
ER1000FCT~ER1004FCT
ISOLATION SUPERFAST RECOVERY RECTIFIERS
VOLTAGE
FEATURES
50 to 400 Volts
CURRENT
10 Amperes
ITO-220AB
Unit : inch (mm)
.112(2.85)
.100(2.55)
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• High surge capacity.
• Super fast recovery times, high voltage.
• Pb free product are available :
99% Sn above can meet Rohs environment
substance directive request
• Low forwrd voltge, high current capability
.134(3.4)
.118(3.0)
.272(6.9)
.248(6.3)
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
.406(10.3)
.381(9.7)
.189(4.8)
.165(4.2)
.130(3.3)
.114(2.9)
.606(15.4)
.583(14.8)
MECHANICALDATA
Case: ITO-220AB Molded plastic
Terminals: Lead solderable per MIL-STD-202, Method 208
Polarity: As marked.
Standard packaging: Any
Weight: 0.08 ounces, 2.24grams.
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.1
(2.55)
.1
(2.55)
.161(4.1)MAX
.543(13.8)
.512(13.0)
.055(1.4)
.039(1.0)
.114(2.9)
.098(2.5)
.032(.8)
MAX
AC
Positive CT
AC
MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d C ur r e nt . 3 7 5 " ( 9 . 5 m m )
l e a d l e n g t h a t Tc = 1 0 0
O
C
P e a k F o r w a r d S ur g e C ur r e nt , 8 . 3 m s s i ng l e ha l f s i ne - w a ve
s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 5 A , p e r e l e m e nt
M a x i m u m D C R e v e r s e C u r r e n t a t TA = 2 5
O
C
R a t e d D C B l o c k i n g V o l t a g e TA = 1 0 0
O
C
M a x i m u m R e v e r s e R e c o v e r y Ti m e ( N o t e 2 )
Ty p i c a l J u n c t i o n c a p a c i t a n c e ( N o t e 1 )
M a xi m um The r m a l R e s i s t a nc e
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L
E R 1 0 0 0 F C T E R 1 0 0 1 F C T E R 1 0 0 1 A F C T
V
RRM
V
RMS
V
DC
I
AV
I
F S M
V
F
I
R
T
RR
C
J
Rθ J C
T
J
, T
S TG
35
62
0 .9 5
50
35
50
100
70
100
150
105
150
E R1 0 0 2 F C T
E R1 0 0 3 F C T
E R1 0 0 4 F C T
U N IT S
V
V
V
A
A
200
140
200
1 0 .0
150
300
210
300
400
280
400
1 .3 0
10
500
50
V
uA
ns
pF
O
3 .0
- 5 0 TO + 1 5 0
C / W
O
C
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: I
F
=.5A, I
R
=1A, Irr=.25A.
3. Both Bonding and Chip structure are available.
STAD-APR.15.2004
PAGE . 1
RATING AND CHARACTERISTIC CURVES
AVERAGE FORWARD CURRENT,
AMPERES
8
6
4
.375"9.5mm LEADLENGHTS
RESISTIVEORINDUCTIVE LOAD
PEAK FORWARD SURGE CURRENT,
10
150
125
100
75
50
25
0
8.3ms Single
Half Since-Wave
JEDEC Method
2
0
0
20
40
60
80
100
O
120
140
160
1
2
5
10
20
50
100
CASE TEMPERAURE, C
NO. OF CYCLE AT 60HZ
Fig.1- FORWARD CURRENT DERATING CURVE
Fig.2- MAXIMUM NON - REPETITIVE SURGE CURRENT
10
3
FORWARD CURRENT, AMPERES
10
50-200V
REVERSE CURRENT, uA
10
2
T
J
=125
O
C
300-400V
10
1
1.0
10
0
10
-1
T
J
= 2 5
O
C
T
A
=2 5 C
0.1
0.4
O
10
-2
20
40
60
80
100
120
0.6
0.8
1.0
1.2
1.4
PERCENT OF RATED PEAK REVERSE VOLTAGE, %
FORWARD VOLATGE, VOLTS
Fig.3- TYPICAL REVERSE CHARACTERISTIC
Fig.4- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTIC
STAD-APR.15.2004
PAGE . 2
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