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ER1004FCT

10 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AB

器件类别:分立半导体    二极管   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
强茂(PANJIT)
零件包装代码
TO-220AB
包装说明
R-PSFM-T3
针数
3
Reach Compliance Code
not_compliant
ECCN代码
EAR99
其他特性
LOW POWER LOSS
应用
EFFICIENCY
外壳连接
ISOLATED
配置
COMMON CATHODE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.3 V
JEDEC-95代码
TO-220AB
JESD-30 代码
R-PSFM-T3
最大非重复峰值正向电流
150 A
元件数量
2
相数
1
端子数量
3
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
10 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大重复峰值反向电压
400 V
最大反向恢复时间
0.05 µs
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
ER1000FCT~ER1006FCT
SUPERFAST RECOVERY RECTIFIERS
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• Super fast recovery times, high voltage.
• In compliance with EU RoHS 2002/95/EC directives
50 to 600 Volts
CURRENT
10 Amperes
MECHANICAL DATA
• Case: ITO-220AB Molded plastic
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Standard packaging: Any
• Weight: 0.0655 ounces, 1.859grams.
.177(4.5)
.137(3.5)
.027(.67)
.022(.57)
MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA M E TE R
M a xi m um Re c urre nt P e a k Re ve rs e Vo lta g e
M a xi m um RM S Vo lta g e
M a xi m um D C B lo ck i ng Vo lta g e
M a xi m um A ve ra g e F o rwa rd C urre nt a t Tc =1 0 0
O
C
P e a k F o rwa rd S urg e C urre nt, 8 .3 ms si ng le ha lf s i ne -wa ve
s up e ri m p o se d o n ra te d lo a d (JE D E C me tho d )
M a xi m um F o rwa rd Vo lta g e a t 5 A , p e r e le me nt
M a xi m um D C Re ve rs e C urre nt a t T
J
=2 5
O
C
Ra te d D C B lo cki ng Vo lta g e T
J
=1 0 0
O
C
M a xi m um Re ve rse Re co ve ry Ti m e (No te 2 )
Typ i ca l Juncti o n c a p a ci ta nce (No te 1 )
Typ i c a l The rm a l Re s i s ta nc e
Op e ra ti ng J uncti o n a nd S to ra g e Te m p e ra ture Ra ng e
S YMB OL
V
RRM
V
RMS
V
DC
I
F (AV )
I
F S M
V
F
I
R
t
rr
C
J
R
θ
JC
T
J
,T
STG
E R1 00 0 F C T E R1 0 01 F C T E R1 00 1 A F C T E R10 02 F C T E R1 00 3F C T E R1 00 4F C T E R1 00 6F C T
UNITS
V
V
V
A
A
50
35
50
100
70
100
150
105
150
200
140
200
1 0 .0
150
300
210
300
400
280
400
600
420
600
0 .9 5
1 .0
500
35
62
3 .0
-5 5 to +1 5 0
1 .3 0
1.7
V
μA
50
ns
pF
O
C /
W
C
O
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: I
F
=.5A, I
R
=1A, Irr=.25A.
3. Both Bonding and Chip structure are available.
May 5,2010-REV.02
PAGE . 1
ER1000FCT~ER1006FCT
RATING AND CHARACTERISTIC CURVES
AVERAGE FORWARD CURRENT,
AMPERES
8
6
4
LEADLENGHTS
RESISTIVEORINDUCTIVE LOAD
PEAK FORWARD SURGE CURRENT,
10
150
125
100
75
50
25
0
8.3ms Single
Half Since-Wave
JEDEC Method
2
0
0
20
40
60
80
100
O
120
140
160
1
2
5
10
20
50
100
CASE TEMPERAURE, C
Fig.1- FORWARD CURRENT DERATING CURVE
NO. OF CYCLE AT 60HZ
Fig.2- MAXIMUM NON - REPETITIVE SURGE CURRENT
40
INSTANTANEOUS REVERSE
CURRENT,
μA
10
INSTNTANEOUS FORWARD CURRENT
AMPERES
T
J
= 125°C
10
200V
300-400V
Per Diode
1
T
J
= 75°C
600V
1
T
J
= 25°C
0.1
20
30
40
50
60
70
80
90
100
T
J
=25 C
Pulse Width=200us
.1
O
PERCENT OF RATED PEAK REVERSE
VOLTAGE, (%)
.6
.8
1.0
1.2
1.4
1.6
1.8
2.0
INSTANTANEOUS FORWARD VOLTAGE ,VOLTS
Fig.3- TYPICAL REVERSE CHARACTERISTIC
Fig.4- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTIC
May 5,2010-REV.02
PAGE . 2
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