首页 > 器件类别 > 半导体 > 分立半导体

ER1600CT_09

16 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB

器件类别:半导体    分立半导体   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

下载文档
文档预览
ER1600CT~ER1606CT
ISOLATION SUPERFAST RECOVERY RECTIFIER
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• Super fast recovery times, high voltage.
• Epitaxial chip construction.
• In compliance with EU RoHS 2002/95/EC directives
.058(1.47)
.042(1.07)
50 to 600 Volts
CURRENT
16.0 Amperes
MECHANICALDATA
• Case: TO-220AB Molded plastic
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Standard packaging: Any
• Weight: 0.0655 ounces, 1.859 grams.
MAXIMUM RATING AND ELECTRICAL CHARACTERISTICSS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a x i m u m A v e r a g e F o r w a r d C u r r e n t a t Tc = 9 0
O
C
P e a k F o r w a r d S ur g e C ur r e nt , 8 . 3 m s s i ng l e ha l f s i ne -
w a ve s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 8 A
M a xi m um D C R e ve r s e C ur r e nt a t T
J
= 2 5
O
C
R a t e d D C B l o c k i ng Vo l t a g e T
J
= 1 0 0
O
C
M a x i m u m R e v e r s e R e c o v e r y Ti m e ( N o t e 2 )
Ty p i c a l J u n c t i o n c a p a c i t a n c e ( N o t e 1 )
Ty p i c a l T h e r m a l R e s i s t a n c e
O p e r a t i n g a n d S t o r a g e Te m p e r a t u r e R a n g e
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: I
F
=.5A, I
R
=1A, Irr=.25A.
3. Both Bonding and Chip structure are available.
S YM B O L
V
RRM
V
RMS
V
D C
I
F ( A V )
I
F S M
V
F
I
R
0 .9 5
1 .0
500
35
62
O
E R1 6 0 0 C T E R1 6 0 1 C T E R1 6 0 1 A C T E R1 6 0 2 C T E R1 6 0 3 C T E R1 6 0 4 C T E R1 6 0 6 C T
U N IT S
V
V
V
A
A
50
35
50
100
70
100
150
105
150
200
140
200
1 6 .0
125
300
210
300
400
280
400
600
420
600
1 .3 0
1.70
V
µ
A
t
rr
C
J
R
θ
J C
T
J
, T
S T G
50
ns
pF
C /
W
C
3 .0
-5 0 to +1 5 0
O
STAD-MAR.06.2009
PAGE . 1
ER1600CT~ER1606CT
RATING AND CHARACTERISTIC CURVES
40
200V
AVERAGE FORWARD CURRENT,
AMPERES
20
16
12
6
LEADLENGHTS
RESISTIVEORINDUCTIVE LOAD
INSTANTANEOUS FORWARD CURRENT
AMPERES
10
300-400V
600V
1
4
0
0
20
40
60
80
100
120
140
160
T
J
=25 C
Pulse Width=300us
.1
O
.6
.8
1.0
1.2
1.4
1.6
1.8
2.0
CASE TEMPERATURE,
O
C
Fig.1- FORWARD CURRENT DERATING CURVE
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
Fig.2- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTIC
INVSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
PEAK FORWARD SURGE CURRENT,
1000
150
125
100
75
50
25
0
8.3ms Single
Half Since-Wave
JEDEC Method
100
T
J
= 125 C
O
T
J
= 75 C
10
O
1.0
1
2
5
10
20
50
100
T
J
= 25 C
O
NO. OF CYCLE AT 60HZ
Fig.4- MAXIMUM NON - REPETITIVE SURGE CURRENT
0.1
20
40
60
80
100
120
PERCENT OF RATED PEAK INVERSE VOLTGE, VOLTS
80
CAPACITANCE, pF
70
T
J
= 25 C
O
FIG.3 TYPICAL REVERSE CHARACTERISTICS
60
50
40
20
10
1
2
5
10
20
50 100 200
500
REVERSE VOLTAGE, VOLTS
Fig.5- TYPICAL JUNCTION CAPACITANCE
STAD-MAR.06.2009
PAGE . 2
查看更多>