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ER2000CT

20 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB

器件类别:分立半导体    二极管   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
强茂(PANJIT)
零件包装代码
TO-220AB
包装说明
ROHS COMPLIANT, PLASTIC PACKAGE-3
针数
3
Reach Compliance Code
not_compliant
ECCN代码
EAR99
其他特性
LOW POWER LOSS
应用
EFFICIENCY
外壳连接
ISOLATED
配置
COMMON CATHODE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
TO-220AB
JESD-30 代码
R-PSFM-T3
最大非重复峰值正向电流
150 A
元件数量
2
相数
1
端子数量
3
最高工作温度
150 °C
最低工作温度
-50 °C
最大输出电流
20 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度(摄氏度)
NOT SPECIFIED
最大重复峰值反向电压
50 V
最大反向恢复时间
0.035 µs
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
ER2000CT~ER2006CT
ISOLATION SUPERFAST RECOVERY RECTIFIER
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• Super fast recovery times, high voltage.
• Epitaxial chip construction.
.058(1.47)
50 to 600 Volts
CURRENT
20.0 Amperes
• In compliance with EU RoHS 2002/95/EC directives
.042(1.07)
MECHANICALDATA
• Case: TO-220AB Molded plastic
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Standard packaging: Any
• Weight: 0.0655 ounces, 1.859 grams.
MAXIMUM RATING AND ELECTRICAL CHARACTERISTICSS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current at Tc=90
o
C
Peak Forward Surge Current : 8.3ms single half sine-wave
superimposed on rated load(JEDEC method)
Maximum Forward Voltage at 10A
Maximum DC Reverse Current T
J
=25
O
C
at Rated DC Blocking VoltageT
J
=100
O
C
Maximum Reverse Recovery Time (Note 2)
Typical Junction capacitance (Note 1)
Typical thermal Resistance (Note 3)
Operating Junction and Storage Temperature Range
SYMBOL
V
R R M
V
R M S
V
D C
I
F (A V )
I
F S M
V
F
I
R
ER2000CT
ER2001CT
ER2001ACT
ER2002CT
ER2003CT
ER2004CT
ER2006CT
UNITS
V
V
V
A
A
50
35
50
100
70
100
150
105
150
200
140
200
20.0
150
300
210
300
400
280
400
600
420
600
0.95
1
500
35
85
3.0
-50 to +150
1.3
1.7
V
µA
t
rr
C
J
R
θ
J c
T
J
,T
S T G
50
100
ns
pF
O
C/W
O
C
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: I
F
=.5A, I
R
=1A, Irr=.25A.
3. Both Bonding and Chip structure are available.
STAD-JUL.22.2009
1
PAGE . 1
ER2000CT~ER2006CT
RATING AND CHARACTERISTIC CURVES
AVERAGE FORWARD CURRENT,
AMPERES
INSTANTANEOUS FORWARD CURRENT
AMPERES
20
16
12
6
RESISTIVEORINDUCTIVE LOAD
50
10
50-200V
300-400V
1.0
600V
4
0
0
20
40
60
80
100
O
T
J=
25 C
Pulse Width=200us
O
120
140
160
0.1
0.75
0.95
.
1.15
1.35
1.55
1.75
CASE TEMPERAURE, C
Fig.1- FORWARD CURRENT DERATING CURVE
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
Fig.2- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTIC
1000
PEAK FORWARD SURGE CURRENT,
180
150
120
90
60
25
0
8.3ms Single
Half Since-Wave
JEDEC Method
INVSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
100
T
J
= 125 C
O
T
J
= 75 C
10
O
1
2
5
10
20
50
100
1.0
NO. OF CYCLE AT 60HZ
T
J
= 25 C
O
Fig.4- MAXIMUM NON - REPETITIVE SURGE CURRENT
0.1
20
40
60
80
100
120
90
PERCENT OF RATED PEAK INVERSE VOLTGE, VOLTS
80
FIG.3 TYPICAL REVERSE CHARACTERISTICS
CAPACITANCE, pF
70
60
T
J
= 25 C
O
50
40
30
20
10
1
2
5
10
20
50 100 200
500
REVERSE VOLTAGE, VOLTS
Fig.5- TYPICAL JUNCTION CAPACITANCE
STAD-JUL.22.2009
1
PAGE . 2
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