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ES1D

反向恢复时间(trr):35ns 直流反向耐压(Vr):200V 平均整流电流(Io):1A 正向压降(Vf):950mV @ 1A

器件类别:分立半导体    超快恢复二极管   

厂商名称:深圳辰达行电子(MDD)

厂商官网:http://www.microdiode.com/

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器件参数
参数名称
属性值
反向恢复时间(trr)
35ns
直流反向耐压(Vr)
200V
平均整流电流(Io)
1A
正向压降(Vf)
950mV @ 1A
文档预览
ES1A THRU ES1J
SURFACE MOUNT SUPER FAST RECTIFIER
Reverse Voltage - 50 to 600 Volts
Forward Current - 1.0 Ampere
FEATURES
DO-214AC/SMA
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
Glass passivated chip junction
0.067 (1.70)
0.051 (1.30)
0.110(2.80)
0.100(2.54)
0.177(4.50)
0.157(3.99)
0.012(0.305)
0.006(0.152)
0.096(2.42)
0.078(1.98)
MECHANICAL DATA
0.008(0.203)MAX.
0.060(1.52)
0.030(0.76)
0.208(5.28)
0.188(4.80)
Case:
JEDEC DO-214AC molded plastic body over passivated chip
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.002
ounce, 0.07 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=55 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
SYMBOLS
ES1A ES1B ES1C
ES1D ES1E
ES1G
ES1J
UNITS
VOLTS
VOLTS
VOLTS
Amp
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
150
105
150
200
140
200
1.0
300
210
300
400
280
400
600
420
600
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
,
T
STG
0.95
30.0
1.25
5.0
50.0
35
15.0
60.0
-50 to +150
1.7
Amps
Volts
µ
A
ns
pF
C/W
C
Note:1.Reverse
recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
2014-03 01版
½½½½://½½½.½½½½½½½½½½.½½½
RATINGS AND CHARACTERISTIC CURVES ES1A THRU ES1J
AVERAGE FORWARD RECTIFIED CURRENT,
AMPERES
FIG. 1- FORWARD CURRENT DERATING CURVE
1.0
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
30
0.8
25
0.6
20
0.4
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
15
0.2
10
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
0
25
50
75
100
125
150
175
5.0
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
1,000
INSTANTANEOUS FORWARD
CURRENT,AMPERES
20
10
T
J
=25 C
PULSE WIDTH=300
µs
1%DUTY CYCLE
100
1
10
TJ=100 C
1
0.1
ES1A-ES1D
ES1E-ES1G
ES1J
0
0.4
0.8
1.2
1.6
1.8
0.1
TJ=25 C
0.01
0.01
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
TRANSIENT THERMAL IMPEDANCE,
C/W
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
JUNCTION CAPACITANCE, pF
200
100
T
J
=25 C
10
10
1
0.1
0.01
0.1
1
10
100
1
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
2014-03 01版
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