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ES1EW

1 A, 300 V, SILICON, SIGNAL DIODE, DO-214AC

器件类别:分立半导体    二极管   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
零件包装代码
DO-214AC
包装说明
ROHS COMPLIANT, PLASTIC, SMA(W), 2 PIN
针数
2
Reach Compliance Code
_compli
ECCN代码
EAR99
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
DO-214AC
JESD-30 代码
R-PDSO-C2
元件数量
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
1 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
最大重复峰值反向电压
300 V
最大反向恢复时间
0.035 µs
表面贴装
YES
端子形式
C BEND
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
ES1AW~ES1GW
SURFACE MOUNT SUPERFAST RECTIFIER
CURRENT
1.0 Amperes
VOLTAGE
50 to 400 Volts
FEATURES
For surface mounted applications
Low profile package
Built-in strain relief
Easy pick and place
Superfast recovery times for high efficiency
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
• Glass passivated junction
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case: JEDEC DO-214AC molded plastic
Terminals: Solder plated, solderable per MIL-STD-750,Method 2026
Polarity: Indicated by cathode band
Standard packaging: 12mm tape (EIA-481)
Weight: 0.0023 ounce, 0.0679 gram
.188(4.80)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
PA RA ME TE R
Ma xi mum Re c urre nt P e a k Re ve rs e Vo lta g e
Ma xi mum RM S Vo lta g e
Ma xi mum D C B lo c k i ng Vo lta g e
Ma xi mum A ve ra g e F o rwa rd C urre nt a t T
L
=1 0 5
O
C
P e a k F o rwa rd S urg e C urre nt : 8 .3 ms s i ng le ha lf s i ne -wa ve
s up e ri mp o s e d o n ra te d lo a d (J E D E C m e tho d )
Ma xi mum F o rwa rd Vo lta g e a t 1 .0 A
Ma xi mum D C Re ve rs e C urre nt a t Ra te d D C
B lo c k i ng Vo lta g e
Ma xi mum Re ve rs e Re c o ve ry Ti me (No te 1 )
Typ i c a l J unc ti o n c a p a c i ta nc e (No te 2 )
Typ i c a l The rm a l Re s i s ta nc e (No te 3 )
Op e ra ti ng J unc ti o n a nd S to ra g e Te m p e ra ture Ra ng e
T
J
= 2 5
O
C
T
J
=1 0 0
O
C
S YM B OL E S 1 AW
V
RRM
V
RMS
V
DC
I
F (AV )
I
F S M
V
F
I
R
t
rr
C
J
R
θJ
L
T
J
,T
S TG
50
35
50
E S 1 B W E S 1 C W E S 1 D W E S 1 E W E S 1 GW UNITS
100
70
100
150
105
150
1 .0
30
0 .9 5
1 .0
10
30
7 .0
35
-5 5 to + 1 5 0
O
200
140
200
300
210
300
400
280
400
V
V
V
A
A
1 .2 5
V
μA
ns
pF
C / W
O
C
NOTES:
1.Reverse Recovery Tset Conditions:I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1.0MHz and applied reverse voltage of 4.0 volts.
3.8.0mm
2
( .013mm thick ) land areas.
June 10,2010-REV.01
PAGE . 1
ES1AW~ES1GW
10
10
I
F
, Forward Current (A)
I
F
, Forward Current (A)
50-200V
50-200V
1
300-400V
1
300-400V
T
J
=25°C
0.1
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0.1
0.4
0.6
0.8
1
1.2
1.4
T
J
=150°C
1.6
1.8
2
V
F
, Forward Voltage (V)
V
F
, Forward Voltage (V)
Fig.1 Typical Forward Characteristics
40
1.20
Fig.2 Typical Forward Characteristics
I
F
, Forward Current (A)
0
10
20
30
40
35
1.00
0.80
0.60
0.40
0.20
0.00
0
25
50
75
100
125
150
C
J
, Junction
Capacitance (pF)
30
25
20
15
10
5
0
V
R
, Reverse Bias Voltage (V)
T
L
, Lead Temperature (°C)
Fig.3 Typical Junction Capacitance
10
Fig.4 Forward Current Derating Curve
I
R
, Leakage Current (uA)
T
J
= 125°C
1
0.1
T
J
= 25°C
0.01
0.001
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig.5 Typical Reverse Characteristics
June 10,2010-REV.01
PAGE . 2
ES1AW~ES1GW
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 7.5K per 13" plastic Reel
T/R - 1.8Kper 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2010
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
June 10,2010-REV.01
PAGE . 3
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