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ES2A

2 A, 50 V, SILICON, RECTIFIER DIODE

器件类别:半导体    分立半导体   

厂商名称:南晶电子(DGNJDZ)

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ES2A
2.0 AMP SUPER FAST RECTIFIERS
THRU
ES2J
VOLTAGE RANGE
50 to 600 Volts
FEATURES
* Ideal for surface mount applications
* Easy pick and place
* Built-in strain relief
* High surge current capability
* Both normal and Pb free product are available:
* Normal:80~95%Sn,5~20%Pb
* Pb free:99 Sn above can meet Rohs enviroment substance
directive request
.058(1.47)
.047(1.20)
CURRENT
2.0 Ampere
DO-214AC(SMA)
.110(2.79)
.100(2.54)
.177(4.50)
.157(3.99)
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Metallurgically bonded construction
* Polarity: Color band denotes cathode end
* Mounting position: Any
* Weight: 0.093 grams
.090(2.29)
.078(1.98)
.060(1.52)
.030(0.76)
.005
(.127) MAX.
.208(5.28)
.194(4.93)
.012(0.31)
.006(0.15)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Ta=55 C
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 2.0A
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Ta=100 C
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range Tj, TSTG
NOTES:
ES2A
50
35
50
ES2B
100
70
100
ES2C
150
105
150
ES2D
200
140
200
2.0
50
ES2E
300
210
300
ES2G
400
280
400
ES2J
600
420
600
UNITS
V
V
V
A
A
V
uA
uA
nS
pF
C
0.95
5.0
150
35
25
-65 +150
1.25
1.70
1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
RATING AND CHARACTERISTIC CURVES (ES2A THRU ES2J)
FIG.1- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
W
NONINDUCTIVE
10
W
NONINDUCTIVE
trr
+0.5A
|
|
|
|
|
|
|
|
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
2.4
2.0
1.6
1.2
0.8
0.4
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
0.375"(9.5mm) Lead Length
(+)
25Vdc
(approx.)
( )
1
W
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
D.U.T.
( )
PULSE
GENERATOR
(NOTE 2)
(+)
0
-0.25A
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE ( C)
FIG.3-TYPICAL FORWARD
CHARACTERISTICS
50
INSTANTANEOUS FORWARD CURRENT,(A)
FIG.4-TYPICAL REVERSE
CHARACTERISTICS
50
3.0
1.0
ES2
D
REVERSE LEAKAGE CURRENT, (mA)
10
10
3.0
1.0
Tj=100 C
ES2
A~
ES
G~
ES
2J
2E
Tj=25 C
Pulse Width 300us
1% Duty Cycle
0.1
ES
2
Tj=25 C
0.1
.01
0
.2
.4
.6
.8
1.0 1.2
1.4 1.8
.01
20
40
60
80
100 120 140
FORWARD VOLT
AGE,(V)
PERCENTAGE OF PEAK REVERSE VOLT
AGE, (%)
FIG.5-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWAARD SURGE CURRENT,(A)
50
FIG.6-TYPICAL JUNCTION CAPACITANCE
70
60
50
40
30
20
10
0
40
30
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
20
10
0
1
5
10
50
100
JUNCTION CAPACITANCE,(pF)
.01
.05
.1
.5
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
REVERSE VOLTAGE,(V)
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