首页 > 器件类别 > 分立半导体 > 快恢复二极管

ES3J

直流反向耐压(Vr):600V 平均整流电流(Io):3A 正向压降(Vf):1.7V @ 3A 反向恢复时间(trr):35ns

器件类别:分立半导体    快恢复二极管   

厂商名称:平伟(PINGWEI)

厂商官网:http://www.perfectway.cn

下载文档
ES3J 在线购买

供应商:

器件:ES3J

价格:-

最低购买:-

库存:点击查看

点击购买

器件参数
参数名称
属性值
直流反向耐压(Vr)
600V
平均整流电流(Io)
3A
正向压降(Vf)
1.7V @ 3A
反向恢复时间(trr)
35ns
文档预览
ES3A THRU ES3J
3.0AMPS. SUPER FAST SURFACE MOUNT RECTIFIER
FEATURE
.High
current capability
.Low
forward voltage drop
.Low
power loss, high efficiency
.High
surge capability
.High
temperature soldering guaranteed:
260℃/10 seconds at terminals.
.Superfast
recovery time for high efficiency.
.For
surface mounted application.
.Easy
pick and place.
SMC(DO-214AB)
.128(3.25)
.108(2.75)
.280(7.11)
.260(6.60)
.103(2.62)
.079(2.00)
.320(8.13)
.305(7.75)
.245(6.22)
.220(5.59)
MECHANICAL DATA
.Case:
Molded plastic
.Epoxy:
UL94V-0 rate flame retardant
.Lead:
MIL-STD- 202E, Method 208 guaranteed
.Polarity:Color
band denotes cathode end
.Packaging:12mm
tape per EIA STD RS-481
.Mounting
position: Any
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%
.012(0.305)
.006(0.152)
.060((1.52)
.030(0.76)
.008(0.203)
.002(0.051)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELETRICAL CHARACTERISTICS
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified Current
at T
A
=55°C
Peak Forward Surge Current 8.3ms single half
sine- wave superimposed on rated load (JEDEC
method)
Maximum Forward Voltage at 3.0A DC
Maximum DC Reverse Current
at rated DC blocking voltage
@T
A
=25°C
@T
A
=100°C
SYM
BOL
ES3A
50
35
50
ES3B
100
70
100
ES3D
200
140
200
3.0
ES3G
400
280
400
ES3J
600
420
600
units
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
(JA)
T
STG
T
J
90.0
0.95
5.0
100.0
35
45
50
-55 to +150
-55 to +150
30
1.3
1.7
A
V
µA
nS
pF
°C /W
°C
°C
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Storage Temperature
Operation Junction Temperature
Note:
1. Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
3. Measured on P.C.Board with 0.2×0.2”(5.0×5.0mm)Copper Pad Areas.
- 443 -
RATING AND CHARACTERISTIC CURVES (ES3A THRU ES3J)
FIG.1-TYPICAL FORWARD CURRENT
DERATING CURVE
FIG.2-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
AVERGE FORWARD
RECTIFIED CURRENT,(A)
INSTANEOUS FORWARD
CURRENT,(A)
50
V-
20
0V
0V
40
0V
60
TJ=25
Pulse Width=300
μ
s
1% Duty Cycle
Single Phase Half
Wave 60Hz
Resistive or
inductive Load
4
8
AMBIENT TEMPERTURE,(
)
FIG.3-MAXIMUN NON-REPETITIVE
FORWARD SURGE CURRENT
120
INSTANEOUS FORWARD VOLTAGE,(V)
FIG.4-TYPICAL REVERSE
CHARACTERISTICS
PEAK FORWARD SURGE
CURRENT,(A)
INSTANEOUS REVERSE
CURRENT,(
μ
A)
8.3ms Single Half
Sine-Wave (JEDEC
Method)
TJ=25
NUMBER OF CYCLES AT 60Hz
PERCENT OF RATED PEAK REVERSE
VOLTAGE,(%)
FIG.5-TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERSITIC
50
Ω
NONINDUCTIVE
10
Ω
NONINDUCTIVE
(+)
25Vdc
(approx)
(-)
(+)
1
Ω
(NOTE 1)
NON- OSCILOSCOPE
INDUCTIVE
PULSE
GENERATOR
(NOTE 2)
(-)
NOTES:
1. Rise Time=7ns max, Input
Impedance= 1 megohm.22pF.
2. Rise Time=10ns max,
Souce Impedance= 50 ohms.
- 444 -
查看更多>