首页 > 器件类别 > 分立半导体 > 超快恢复二极管

ES3JCG

直流反向耐压(Vr):600V 平均整流电流(Io):3A 正向压降(Vf):1.68V @ 3A 反向恢复时间(trr):35ns

器件类别:分立半导体    超快恢复二极管   

厂商名称:时科(SHIKUES)

厂商官网:http://www.shike.tw

下载文档
器件参数
参数名称
属性值
直流反向耐压(Vr)
600V
平均整流电流(Io)
3A
正向压降(Vf)
1.68V @ 3A
反向恢复时间(trr)
35ns
文档预览
ES3ACG THRU ES3JCG
Surface Mount Superfast Recovery Rectifier
Reverse Voltage – 50 to 600 V Forward Current –3 A
FEATURES
• For surface mounted applications
• Low profile package
• Glass Passivated Chip Junction
• Superfast reverse recovery time
• Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
• Case : SMC
• Terminals: Solderable per MIL-STD-750, Method 2026
• A pprox. Weight : 0.22g / 0.0077oz
Absolute Maximum Ratings and Characteristics
Ratings at 25
°C
ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Maximum Repetitive Peak Reverse Voltage
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
2
1
Top View
Marking Code: ES3A~ES3J
Simplified outline SMC and symbol
Symbols
V
RRM
V
RMS
V
DC
I
F(AV)
ES3AC ES3BC ES3CC
G
G
G
ES3DC
G
ES3EC ES3GC
G
G
ES3JC
G
Units
V
V
V
50
35
50
100
70
100
150
105
150
200
140
200
300
210
300
400
280
400
600
420
600
Maximum RMS voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
c
= 125
°C
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
Maximum Forward Voltage at 3 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance
at V
R
=4V, f=1MHz
(1)
3
A
A
1.25
1.68
V
I
FSM
90
V
F
T
a
= 25
°C
T
a
=125
°C
1
5
100
40
I
R
μA
C
j
pF
Maximum Reverse Recovery Time
t
rr
R
θJA
R
θJC
T
j
, T
stg
35
40
16
-55 ~ +150
ns
Typical Thermal Resistance
(2)
°C/W
°C
Operating and Storage Temperature Range
(1)Measured
with I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A .
(2)
P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
REV.08
1 of 3
ES3ACG THRU ES3JCG
Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram
50 ohm
Noninductive
10 ohm
Noninductive
t
rr
+0.5
+
25Vdc
approx
D.U.T
PULSE
GENERATOR
Note 2
0
-0.25
-
1 ohm
NonInductive
OSCILLOSCOPE
Note 1
-1.0
Note:1.Rise Time = 7ns, max.
Input Impedance = 1megohm,22pF.
2. Ries Time =10ns, max.
Source Impedance = 50 ohms.
10ns/div
Set time Base for 10ns/div
Fig.2 Maximum Average Forward Current Rating
Average Forward Current (A)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
175
300
100
Fig.3 Typical Reverse Characteristics
I
R
- Reverse Current (
μ
A)
T
J
=125
°C
10
T
J
=75
°C
1.0
T
J
=25
°C
Single phase half-wave 60 Hz
resistive or inductive load
0.1
0
20
40
60
80
100
Case Temperature (°C)
Fig.4 Typical Forward Characteristics
Instaneous Forward Current (A)
Junction Capacitance ( pF)
10
% of PIV.VOLTS
Fig.5 Typical Junction Capacitance
T
J
=25
°C
100
T
J
=25
°C
1.0
ES3ACG~ES3DCG
0.1
ES3ECG/ES3GCG
ES3JCG
0.01
10
T
J
=25
°C
f = 1.0MHz
V
sig
= 50mV
p-p
0.001
0
0.5
1.0
1.5
2.0
2.5
1
0.1
1.0
10
100
Instaneous Forward Voltage (V)
Reverse Voltage (V)
Fig.6 Maximum Non-Repetitive Peak
Forward Surage Current
Peak Forward Surage Current (A)
96
80
64
48
32
16
8.3 ms Single Half Sine Wave
(JEDEC Method)
00
1
10
100
Number of Cycles
REV.08
2 of 3
ES3ACG THRU ES3JCG
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
E
A
SMC
L
D
A
A
1
E
1
C
VM
A
b
SMC mechanical data
UNIT
max
mm
min
max
mil
min
79
256
220
299
2.0
5.9
35
108
2.00
103
6.5
276
5.6
244
7.6
315
0.05
8.3
0.15
12
0.9
63
2.75
128
A
2.62
E
7.0
D
6.2
E
1
8.0
A
1
0.21
C
0.31
L
1.6
b
3.25
The recommended mounting pad size
Marking
Type number
Marking code
ES3A
ES3B
ES3C
ES3D
ES3E
ES3G
ES3J
4.1
(160)
3.8
(150)
4.1
(160)
ES3ACG
ES3BCG
ES3CCG
4.3
(170)
ES3DCG
ES3ECG
ES3GCG
ES3JCG
mm
Unit
(mil)
REV.08
3 of 3
查看更多>