ESD3Z3V
ESD3Z3V
1-Line Uni-directional Transient Voltage Suppres-
sors
Http//:www.willsemi.com
Descriptions
The ESD3Z3V is a transient voltage suppressors
(TVS) which provide a very high level protection for
sensitive electronic components that may be subjected
to electrostatic discharge (ESD). It is designed to re-
place multilayer varistors (MLV) in consumer equip-
ments applications such as mobile phone, notebook,
PAD, STB, LCD TV etc.
The ESD3Z3V was past ESD transient voltage up
to ±30kV (contact) according to IEC61000-4-2 and
withstand peak current up to 9A for 8/20us pulse ac-
cording to IEC61000-4-5.
The ESD3Z3V is available in SOD-323 package.
Standard products are Pb-free and Halogen-free.
3
*
SOD-323
Pin configuration (Top view)
Features
Working voltage
Peak power (tp=8/20us)
ESD protection
IEC61000-4-2 (Contact)
IEC61000-4-2 (Air)
Low leakage current
Small package
: ±30kV
: ±30kV
: 3.3V
: 108W
3
*
SOD-323
= Device code
= Month code (A~Z)
Marking
Order information
Device
Package
SOD-323
Shipping
3000/Tape&Reel
Applications
Mobile phone
PAD
Notebook
STB
LCD TV
Digital camera
Other electronics equipments
ESD3Z3V-2/TR
Will Semiconductor Ltd.
1
Dec, 2012 - Rev. 2.0
ESD3Z3V
Absolute maximum ratings
Parameter
Symbol
Rating
Unit
Peak pulse power (tp=8/20us)
Peak pulse current (tp=8/20us)
ESD voltage IEC61000-4-2 air
ESD voltage IEC61000-4-2 contact
Junction temperature
Operating temperature
Lead temperature
Storage temperature
Ppk
Ipp
V
ESD
T
J
T
OP
T
L
T
STG
108
9
±30
±30
125
-40~85
260
-55~150
W
A
kV
o
o
o
o
C
C
C
C
Electronics characteristics
(Ta=25
o
C, unless otherwise noted)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Reverse maximum working voltage
Reverse leakage current
Reverse breakdown voltage
Forward voltage
Clamping voltage
Junction capacitance
V
RWM
I
R
V
BR
V
F
V
C
C
V
RWM
=1V
V
RWM
=4.2V
I
T
=1mA
I
F
=-10mA
Ipp=1A tp=8/20us
Ipp=9A tp=8/20us
F=1MHz, V
R
=0V
70
4.8
0.55
5.2
0.8
3.3
0.1
10
5.4
1.25
6.5
12
90
V
uA
uA
V
V
V
V
pF
110
100
90
80
70
60
50
40
30
20
10
0
Front times=1.25*( t90-t10) =8us
Peak Pulse Current (%)
Duration=20us
Peak Pulse Current (%)
100
90
10
30ns
tr=0.7~1ns
60ns
t
0
5
10
15
20
25
30
Peak Pulse time (us)
8/20us waveform
35
40
IEC61000-4-2 waveform
2
Dec, 2012 - Rev. 2.0
Will Semiconductor Ltd.
ESD3Z3V
T
ypical characteristics
(Ta=25
o
C, unless otherwise noted)
15
80
C - Junction capacitance (pF)
Pulse waveform: tp=8/20us
F
signal
=1MHz
70
60
50
40
30
V
signal
=50mVrms
V
C
- Clamping voltage (V)
10
5
0
0
3
6
9
0
1
2
3
4
Ipp - Peak pulse current (A)
V
R
- Reverse voltage (V)
Clamping voltage vs. Peak pulse current
Capacitance vs. Reveres voltage
1000
100
Peak Pulse Power (W)
% of Rated power
100
80
60
40
20
10
1
0
1
10
100
Pulse Duration(us)
1000
0
25
50
75
100
o
125
150
T
A
- Ambient temperature ( C)
Non-Repetitive Peak Pulse Power vs. Pulse time
Power derating vs. Temperature
ESD Clamping
(IEC61000-4-2 +8kV contact)
ESD Clamping
(IEC61000-4-2 -8kV contact)
Will Semiconductor Ltd.
3
Dec, 2012 - Rev. 2.0
ESD3Z3V
Package outline dimensions
SOD-323
Symbol
Dimensions in millimeter
Min.
Typ.
Max.
A
A1
A2
b
c
D
E
E1
L
L1
θ
0.250
0
o
1.000
0.000
0.800
0.250
0.080
1.200
1.600
2.500
1.300
1.700
2.600
0.475 Ref.
0.400
8
o
0.300
0.100
0.900
0.350
0.150
1.400
1.800
2.700
Recommend PCB Layout (Unit: mm)
Will Semiconductor Ltd.
4
Dec, 2012 - Rev. 2.0
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