ESD3Z5VBS
ESD3Z5VBS
1-Line Bidirectional Transient Voltage
Suppressors
Http//:www.willsemi.com
Descriptions
The ESD3Z5VBS is a transient voltage suppres-
sors (TVS) which provide a very high level protection
for sensitive electronic components that may be sub-
jected to electrostatic discharge (ESD). It is designed
to replace multilayer varistors (MLV) in consumer
equipments applications such as mobile phone, note-
book, PAD, STB, LCD TV etc.
The ESD3Z5VBS was past ESD transient voltage
up to ±30kV (contact) according to IEC61000-4-2 and
withstand peak current up to 11A for 8/20us pulse ac-
cording to IEC61000-4-5.
The ESD3Z5VBS is available in SOD-323 pack-
age. Standard products are Pb-free and Halogen-free.
*A
SOD-323
Pin configuration (Top view)
Features
Working voltage
Peak power (tp=8/20us)
Peak current (tp=8/20us)
Transient protection
IEC61000-4-2, Level 4
Low clamping voltage
Low leakage current
Small package
Device
ESD3Z5VBS-2/TR
: ±30kV air
: ±30kV contact
: 5V
: 154W Max.
: 11A Max.
A
*
SOD-323
= Device code
= Month code
Marking
Order information
Package
SOD-323
Shipping
3000/Tape&Reel
Applications
Cell phone
PMP
MID
PDA
Digital camera
Other electronics equipments
Will Semiconductor Ltd.
1
Dec, 2012 - Rev. 1.0
ESD3Z5VBS
Absolute maximum ratings
Parameter
Peak pulse power (tp=8/20us)
Peak pulse current (tp=8/20us)
ESD voltage IEC61000-4-2 air
ESD voltage IEC61000-4-2 contact
Junction temperature
Operating temperature
Lead temperature
Storage temperature
Symbol
Ppk
Ipp
V
ESD
T
J
T
OP
T
L
T
STG
Rating
154
11
±30
±30
125
-40~85
260
-55~150
Unit
W
A
kV
o
o
o
o
C
C
C
C
Electronics characteristics
(Ta=25
o
C, unless otherwise noted)
Parameter
Reverse maximum working voltage
Reverse leakage current
Reverse breakdown voltage
Clamping voltage
Junction capacitance
Symbol
V
RWM
I
R
V
BR
V
C
C
J
V
RWM
=5V
I
T
=1mA
Ipp=1A tp=8/20us
Ipp=11A tp=8/20us
F=1MHz, V
R
=0V
20
6.9
7.5
Condition
Min.
Typ.
Max.
5
1
8.1
9
14
25
Unit
V
uA
V
V
V
pF
110
100
90
80
70
60
50
40
30
20
10
0
Front times=1.25*( t90-t10) =8us
Peak Pulse Current (%)
Duration=20us
Peak Pulse Current (%)
100
90
10
0
5
10
15
20
25
30
Peak Pulse time (us)
8/20us waveform
35
40
30ns
tr=0.7~1ns
60ns
t
IEC61000-4-2 waveform
2
Dec, 2012 - Rev. 1.0
Will Semiconductor Ltd.
ESD3Z5VBS
Typical characteristics
(Ta=25
o
C, unless otherwise noted)
16
Pulse waveform: tp=8/20us
V
C
- Clamping voltage (V)
12
20.0
C - Junction capacitance (pF)
F
signal
=1MHz
19.5
V
signal
=50mVrms
8
19.0
4
18.5
0
0
3
6
9
12
18.0
0
1
2
3
4
5
Ipp - Peak pulse current (A)
V
R
- Reverse voltage (V)
Clamping voltage vs. Peak pulse current
1000
Capacitance vs. Reveres voltage
100
Peak Pulse Power (W)
% of Rated power
100
80
60
40
20
10
1
0
1
10
100
Pulse Duration(us)
1000
0
25
50
75
100
o
125
150
T
A
- Ambient temperature ( C)
Non-Repetitive Peak Pulse Power vs. Pulse time
Power derating vs. Temperature
ESD clamping voltage
(IEC61000-4-2 +8kV contact)
ESD clamping voltage
(IEC61000-4-2 -8kV contact)
Will Semiconductor Ltd.
3
Dec, 2012 - Rev. 1.0
ESD3Z5VBS
Package outline dimensions
SOD-323
Symbol
A
A1
A2
b
c
D
E
E1
L
L1
θ
Dimensions in millimeter
Min.
0.000
0.800
0.250
0.080
1.200
1.600
2.500
0.250
0°
Recommend PCB Layout (Unit: mm)
1.300
1.700
2.600
0.475Ref
0.400
8°
0.300
Typ.
-
-
Max.
1.000
0.100
0.900
0.350
0.150
1.400
1.800
2.700
Will Semiconductor Ltd.
4
Dec, 2012 - Rev. 1.0
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