ESD5301Z
ESD5301Z
1-Line, Uni-directional, Ultra-low Capacitance
Transient Voltage Suppressors
http//:www.sh-willsemi.com
Descriptions
The ESD5301Z is an ultra-low capacitance TVS (Transient
Voltage Suppressor) designed to protect high speed data
interfaces. It has been specifically designed to protect
sensitive electronic components which are connected to data
and transmission lines from over-stress caused by ESD
(Electrostatic Discharge).
The ESD5301Z incorporates one pair of ultra-
capacitance steering diodes plus a TVS diode.
The ESD5301Z may be used to provide ESD protection up to
±20kV
(contact
and
air
discharge)
according
to
Pin1
Pin2
DFN0603-2L (Bottom View)
low
IEC61000-4-2, and withstand peak pulse current up to 4A
(8/20μs) according to IEC61000-4-5.
The ESD5301Z is available in DFN0603-2L package.
Standard products are Pb-free and Halogen-free.
Circuit diagram
Features
Stand-off voltage: 5V max.
Transient protection for each line according to
IEC61000-4-2 (ESD): ±20kV (contact and air discharge)
IEC61000-4-4 (EFT): 40A (5/50ns)
IEC61000-4-5 (surge): 4A (8/20μs)
Ultra-low capacitance: C
J
= 0.4pF typ.
Ultra-low leakage current: I
R
<1nA typ.
Low clamping voltage: V
CL
= 18V typ. @ I
PP
= 16A (TLP)
Small package
Pin1
* Z
Z
*
= Device code
= Month code
Pin2
Marking (Top View)
Order information
Device
Package
Shipping
10000/Tape&Reel
Applications
USB 2.0 and USB 3.0
HDMI 1.3 and HDMI 1.4
SATA and eSATA
DVI
IEEE 1394
PCI Express
Portable Electronics and Notebooks
1
Revision 1.0, 2014/06/27
ESD5301Z-2/TR DFN0603-2L
Will Semiconductor Ltd.
ESD5301Z
Absolute maximum ratings
Parameter
Peak pulse power (t
p
= 8/20μs)
Peak pulse current (t
p
= 8/20μs)
ESD according to IEC61000-4-2 air discharge
ESD according to IEC61000-4-2 contact discharge
Operation junction temperature
Lead temperature
Storage temperature
Symbol
P
pk
I
PP
V
ESD
T
J
T
L
T
STG
Rating
60
4
±20
±20
125
260
-55~150
Unit
W
A
kV
o
o
o
C
C
C
Electrical characteristics
(T
A
= 25
o
C, unless otherwise noted)
Parameter
Reverse maximum working voltage
Reverse leakage current
Reverse breakdown voltage
Forward voltage
Clamping voltage
1)
1)
Symbol
V
RWM
I
R
V
BR
V
F
V
CL
R
DYN
V
CL
C
J
Condition
Min.
Typ.
Max.
5.0
Unit
V
nA
V
V
V
Ω
V
RWM
= 5V
I
BR
= 1mA
I
F
= 10mA
I
PP
= 16A, t
p
= 100ns
7.0
0.6
<1
8.0
0.9
18.0
0.57
100
9.0
1.2
Dynamic resistance
Clamping voltage
2)
I
PP
= 1A, t
p
= 8/20μs
I
PP
= 4A, t
p
= 8/20μs
V
R
= 0V, f = 1MHz
0.40
11
15
0.65
V
V
pF
Junction capacitance
Notes:
1)
TLP parameter: Z
0
= 50 Ω , t
p
= 100ns, t
r
= 2ns, averaging window from 60ns to 80ns. R
DYN
is calculated from 4A to
16A.
Non-repetitive current pulse, according to IEC61000-4-5.
2)
Will Semiconductor Ltd.
2
Revision 1.0, 2014/06/27
ESD5301Z
Typical characteristics
(T
A
= 25
o
C, unless otherwise noted)
110
100
90
80
70
60
50
40
30
20
10
0
Front time: T
1
= 1.25
×
T = 8µs
Time to half-value:
T
2
= 20µs
Peak pulse current (%)
100
90
T
2
Current (%)
10
0
5
T
T
1
10
15 20 25
Time (µs)
30
35
40
30ns
t
r
= 0.7~1ns
60ns
t
Time (ns)
8/20μs waveform per IEC61000-4-5
Contact discharge current waveform per IEC61000-4-2
0.44
V
C
- Clamping voltage (V)
14
Pulse waveform: t
p
= 8/20µs
C
J
- Junction capacitance (pF)
0.42
12
0.40
f = 1MHz
V
AC
= 50mV
10
0.38
8
0
1
2
3
4
I
PP
- Peak pulse current (A)
5
0.36
0
1
2
3
4
V
R
- Reverse voltage (V)
5
Clamping voltage vs. Peak pulse current
Capacitance vs. Reveres voltage
1000
100
Peak pulse power (W)
100
% of Rated power
80
60
40
20
10
1
0
1
10
100
Pulse time (µs)
1000
0
25
50
75
100
125
150
T
A
- Ambient temperature (
o
C)
Power derating vs. Ambient temperature
Non-repetitive peak pulse power vs. Pulse time
Will Semiconductor Ltd.
3
Revision 1.0, 2014/06/27
ESD5301Z
Typical characteristics
(T
A
= 25
o
C, unless otherwise noted)
ESD clamping
(+8kV contact discharge per IEC61000-4-2)
ESD clamping
(-8kV contact discharge per IEC61000-4-2)
20
18
16
14
12
10
8
6
4
2
0
-2
TLP current (A)
Z
0
= 50
Ω
t
r
= 2ns
t
p
= 100ns
0
2
4
6
8 10 12 14 16 18 20 22
TLP voltage (V)
TLP Measurement
Will Semiconductor Ltd.
4
Revision 1.0, 2014/06/27
ESD5301Z
Package outline dimensions
DFN0603-2L
ＣＡＴＨＯＤＥ ＭＡＲＫＩＮＧ
Ｌ３
Ｌ２
Ｅ
½
½
（Ⅰ）
Ｄ
Top View
½
Ｌ１
（Ⅱ）
Bottom View
Ａ１
½
Symbol
A
D
Side View
A1
E
b
c
e
L1
L2
Dimensions in millimeter
Min.
0.230
0.550
0.000
0.250
0.215
0.300
0.260
0.050 REF.
0.365
0.115
0.115
0.400
0.160
0.160
0.030 REF.
0.435
0.195
0.195
Typ.
0.300
0.600
Max.
0.340
0.670
0.050
0.370
0.295
Ａ
Recommend land pattern
(Unit: mm)
0.22
L3
0.20
0.32
Notes:
0.40
0.62
This recommended land pattern is for reference
purposes only. Please consult your manufacturing
group to ensure your PCB design guidelines are met.
Will Semiconductor Ltd.
5
Revision 1.0, 2014/06/27
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