ESD5302F
ESD5302F
2-Lines, Uni-directional, Ultra-low Capacitance
Transient Voltage Suppressors
http//:www.sh-willsemi.com
Descriptions
The ESD5302F is an ultra-low capacitance TVS (Transient
Voltage Suppressor) array designed to protect high speed
data interfaces. It has been specifically designed to protect
sensitive electronic components which are connected to data
and transmission lines from over-stress caused by ESD
(Electrostatic Discharge).
The ESD5302F incorporates two pairs of ultra- low
capacitance steering diodes plus a TVS diode.
The ESD5302F may be used to provide ESD protection up to
±20kV
(contact
and
air
discharge)
according
to
IEC61000-4-2, and withstand peak pulse current up to 4A
(8/20μs) according to IEC61000-4-5.
The ESD5302F is available in SOT-23 package. Standard
products are Pb-free and Halogen-free.
SOT-23 (Top View)
Features
Stand-off voltage: 5V Max
Transient protection for each line according to
IEC61000-4-2 (ESD): ±20kV (contact and air discharge)
IEC61000-4-4 (EFT): 40A (5/50ns)
IEC61000-4-5 (surge): 4A (8/20μs)
Ultra-low capacitance: C
J
= 0.4pF typ.
Ultra-low leakage current: I
R
<1nA typ.
Low clamping voltage: V
CL
= 20V @ I
PP
= 16A(TLP)
Solid-state silicon technology
Circuit diagram
GND
3
W02*
1
I/O1
2
I/O2
W = Will
02 = Device code
* = Month code ( A~Z)
Marking (Top View)
Applications
USB 2.0 and USB 3.0
HDMI 1.3 and HDMI 1.4
SATA and eSATA
DVI
IEEE 1394
PCI Express
Portable Electronics
Notebooks
1
Revision 1.1, 2014/01/02
Device
ESD5302F-3/TR
Order information
Package
SOT-23
Shipping
3000/Tape&Reel
Will Semiconductor Ltd.
ESD5302F
Absolute maximum ratings
Parameter
Peak pulse power (t
p
= 8/20μs)
Peak pulse current (t
p
= 8/20μs)
ESD according to IEC61000-4-2 air discharge
ESD according to IEC61000-4-2 contact discharge
Operation junction temperature
Lead temperature
Storage temperature
Symbol
P
pk
I
PP
V
ESD
T
J
T
L
T
STG
Rating
60
4
±20
±20
125
260
-55~150
Unit
W
A
kV
o
o
o
C
C
C
Electrical characteristics
(T
A
=25
o
C, unless otherwise noted)
Parameter
Reverse maximum working voltage
Reverse leakage current
Reverse breakdown voltage
Forward voltage
Clamping voltage
1)
Dynamic resistance
1)
Clamping voltage
2)
Symbol
V
RWM
I
R
V
BR
V
F
V
CL
R
DYN
V
CL
I
PP
= 1A, t
p
= 8/20μs
I
PP
= 4A, t
p
= 8/20μs
V
R
= 0V, f = 1MHz
Junction capacitance
C
J
Any I/O pin to GND
V
R
= 0V, f = 1MHz
Between any I/O pin
Notes:
1)
2)
TLP parameter: Z
0
= 50
Ω
, t
p
= 100ns, t
r
= 2ns, averaging window from 60ns to 80ns. R
DYN
is calculated from 4A to
16A.
According to IEC61000-4-5.
Condition
Min.
Typ.
Max.
5.0
Unit
V
nA
V
V
V
Ω
V
RWM
= 5V
I
T
= 1mA
I
T
= 10mA
I
PP
= 16A, t
p
= 100ns
7.0
0.6
<1
8.0
0.9
20
0.65
100
9.0
1.2
11
15
0.40
0.25
0.65
0.40
V
V
pF
pF
Will Semiconductor Ltd.
2
Revision 1.1, 2014/01/02
ESD5302F
Typical characteristics
(T
A
=25
o
C, unless otherwise noted)
110
100
90
80
70
60
50
40
30
20
10
0
Front time: T
1
= 1.25
T = 8
s
Time to half-value:
T
2
= 20
s
100
90
Current (%)
10
Peak pulse current (%)
T
2
0
5
T
T
1
10
15
20
25
Time (
s)
30
35
40
t
r
= 0.7~1ns
30ns
Time (ns)
60ns
t
8/20μs waveform per IEC61000-4-5
Contact discharge current waveform per IEC61000-4-2
0.50
C
J
- Junction capacitance (pF)
V
C
- Clamping voltage (V)
14
Pulse waveform: t
p
= 8/20
s
f = 1MHz
0.45
0.40
0.35
0.30
Between Pin1 and Pin2
Pin1 or 2 to Pin3
12
10
0.25
0.20
0
1
2
3
4
5
8
0
1
2
3
4
5
I
PP
- Peak pulse current (A)
V
R
- Reverse voltage (V)
Clamping voltage vs. Peak pulse current
1000
Capacitance vs. Reveres voltage
100
Peak pulse power (W)
% of Rated power
100
80
60
40
20
0
10
1
1
10
100
Pulse time (
s)
1000
0
25
50
75
100
o
125
150
T
A
- Ambient temperature ( C)
Non-repetitive peak pulse power vs. Pulse time
Will Semiconductor Ltd.
3
Power derating vs. Ambient temperature
Revision 1.1, 2014/01/02
ESD5302F
Typical characteristics
(T
A
=25
o
C, unless otherwise noted)
ESD clamping
(+8kV contact discharge per IEC61000-4-2)
20
18
16
TLP current (A)
14
12
10
8
6
4
2
0
0
2
4
6
8
10 12 14 16 18 20 22
TLP voltage (V)
Z
0
= 50
t
r
= 2ns
t
p
= 100ns
ESD clamping
(-8kV contact discharge per IEC61000-4-2)
TLP Measurement
Will Semiconductor Ltd.
4
Revision 1.1, 2014/01/02
ESD5302F
Package outline dimensions
SOT-23
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions in millimeter
Min.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.950TYP
1.800
0.500REF
0.300
0°
0.500
8°
2.000
Max.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Dimensions In Inches
Min.
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.037TYP
0.071
0.022REF
0.012
0°
0.020
8°
0.079
Max.
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
Will Semiconductor Ltd.
5
Revision 1.1, 2014/01/02
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