ESD5305FB
ESD5305FB
4-Lines, Uni-directional, Low Capacitance
Transient Voltage Suppressors
http//:www.sh-willsemi.com
Descriptions
The ESD5305FB is a low capacitance TVS (Transient Voltage
Suppressor) array designed to protect high speed data
interfaces. It has been specifically designed to protect
sensitive electronic components which are connected to data
and transmission lines from over-stress caused by ESD
(Electrostatic Discharge).
The ESD5305FB incorporates four pairs of low capacitance
steering diodes plus a TVS diode.
The ESD5305FB may be used to provide ESD protection up to
±30kV (contact discharge) according to IEC61000-4-2, and
withstand peak pulse current up to 6A (8/20μs) according to
IEC61000-4-5.
The ESD5305FB is available in SOT23-6L package. Standard
products are Pb-free and Halogen-free.
2
1
3
4
6
5
SOT23-6L
Circuit diagram
I/O
6
VDD
5
I/O
4
Features
Reverse stand-off voltage: 5V max.
Transient protection for each line according to
IEC61000-4-2 (ESD):
±30kV (contact discharge)
1
I/O
5305
YYWW
2
GND
3
I/O
IEC61000-4-5 (surge): 6A (8/20μs)
Low capacitance: C
I/O - GND
= 0.65pF typ. (VDD = floated)
C
I/O - GND
= 0.35pF typ. (VDD = 5V)
Ultra-low leakage current: I
R
<1nA typ.
Low clamping voltage: V
CL
= 12.8V @ I
PP
= 16A (TLP)
Solid-state silicon technology
5305
YY
WW
= Device code
= Year code
= Week code
View)
Marking & Pin configuration (Top
Applications
USB 2.0
HDMI 1.3
SATA and eSATA
DVI
IEEE 1394
PCI Express
Portable Electronics
Notebooks
1
Order information
Device
ESD5305FB-6/TR
Package
SOT23-6L
Shipping
3000/Tape&Reel
Will Semiconductor Ltd.
Revision 1.1, 2014/12/19
ESD5305FB
Absolute maximum ratings
Parameter
Peak pulse power (t
p
= 8/20μs)
Peak pulse current (t
p
= 8/20μs)
ESD according to IEC61000-4-2 air discharge
ESD according to IEC61000-4-2 contact discharge
Junction temperature
Operation temperature
Storage temperature
Lead temperature
Symbol
P
pk
I
PP
V
ESD
T
J
T
OP
T
STG
T
L
Rating
84
6
±30
±30
125
-40 to 85
-55 to 150
260
Unit
W
A
kV
o
o
o
o
C
C
C
C
Electrical characteristics
(T
A
= 25
o
C, unless otherwise noted)
I
I
PP
V
F
I
F
V
FC
I
PP
Forward voltage
Forward current
Forward clamping voltage
Peak pulse current
V
RWM
Reverse stand-off voltage
I
R
V
BR
V
CL
I
PP
I
BR
I
R
V
RWM
V
BR
V
CL
I
F
Reverse leakage current
Reverse breakdown voltage
Clamping voltage
Peak pulse current
V
FC
V
F
V
I
PP
Definitions of electrical characteristics
Will Semiconductor Ltd.
2
Revision 1.1, 2014/12/19
ESD5305FB
Electrical characteristics
(T
A
= 25
o
C, unless otherwise noted)
Parameter
Reverse stand-off voltage
Reverse leakage current
Reverse breakdown voltage
Forward voltage
Clamping voltage
1)
1)
Symbol
V
RWM
I
R
V
BR
V
F
V
CL
R
DYN
V
CL
V
RWM
= 5V
I
BR
= 1mA
I
F
= 10mA
Condition
Min.
Typ.
Max.
5.0
Unit
V
nA
V
V
V
Ω
<1
7.0
0.6
8.0
0.9
12.8
0.24
50
9.0
1.2
I
PP
= 16A, t
p
= 100ns
Dynamic resistance
Clamping voltage
2)
I
PP
= 1A, t
p
= 8/20μs
I
PP
= 6A, t
p
= 8/20μs
V
R
= 0V, f = 1MHz,
VDD = floated, any I/O to GND
V
R
= 0V, f = 1MHz,
VDD = 5V, any I/O to GND
0.65
0.35
0.35
10
14
1.0
0.50
0.50
V
V
pF
pF
pF
C
I/O - GND
Junction capacitance
C
I/O – I/O
Notes:
V
R
= 0V, f = 1MHz, any I/O to I/O
1) TLP parameter: Z
0
= 50Ω , t
p
= 100ns, t
r
= 2ns, averaging window from 60ns to 80ns. R
DYN
is calculated from 10A to
30A.
2)
Non-repetitive current pulse, according to IEC61000-4-5.
Will Semiconductor Ltd.
3
Revision 1.1, 2014/12/19
ESD5305FB
Typical characteristics
(T
A
= 25
o
C, unless otherwise noted)
100
90
Front time: T
1
= 1.25
×
T = 8µs
Time to half-value:
T
2
= 20µs
Peak pulse current (%)
100
90
50
T
2
Current (%)
10
10
0
0
T
T
1
20
Time (µs)
30ns
t
r
= 0.7~1ns
60ns
t
Time (ns)
8/20μs waveform per IEC61000-4-5
Contact discharge current waveform per IEC61000-4-2
13
Junction capacitance (pF)
0.8
Pulse waveform: t
p
= 8/20µs
V
C
- Clamping voltage (V)
12
11
10
9
8
0.7
0.6
0.5
Vcc = floated, I/O to GND
f = 1MHz
0.4
I/O to I/O
0.3
VDD = 5V, I/O to GND
0
1
2
3
4
5
I
PP
- Peak pulse current (A)
6
7
0.2
0
1
2
3
4
V
R
- Reverse voltage (V)
5
Clamping voltage vs. Peak pulse current
Capacitance vs. Reverse voltage
1000
100
Peak pulse power (W)
% of Rated power
100
80
60
40
20
10
1
1
10
100
Pulse time (µs)
1000
0
0
25
50
75
100
125
150
T
A
- Ambient temperature (
o
C)
Power derating vs. Ambient temperature
Non-repetitive peak pulse power vs. Pulse time
Will Semiconductor Ltd.
4
Revision 1.1, 2014/12/19
ESD5305FB
Typical characteristics
(T
A
= 25
o
C, unless otherwise noted)
ESD clamping
(+8kV contact discharge per IEC61000-4-2)
ESD clamping
(-8kV contact discharge per IEC61000-4-2)
40
35
TLP current (A)
30
25
20
15
10
5
0
0
2
4
6
Z
0
= 50Ω
t
r
= 2ns
t
p
= 100ns
8 10 12 14 16 18 20
TLP voltage (V)
TLP Measurement
Will Semiconductor Ltd.
5
Revision 1.1, 2014/12/19
电子工程世界
嵌入式系统
