ESD5341N
ESD5341N
1-Line, Uni-directional, Low Capacitance
Transient Voltage Suppressors
http//:www.sh-willsemi.com
Descriptions
The ESD5341N is a low capacitance TVS (Transient Voltage
Suppressor) designed to protect high speed data interfaces.
It has been specifically designed to protect sensitive
electronic components which are connected to data and
transmission lines
from
over-stress
caused by ESD
(Electrostatic Discharge).
The ESD5341N incorporates one pair of low capacitance
steering diodes plus a TVS diode.
The ESD5341N may be used to provide ESD protection up to
±20kV (contact discharge) according to IEC61000-4-2, and
withstand peak pulse current up to 4A (8/20μs) according to
IEC61000-4-5.
The ESD5341N is available in DFN1006-2L package.
Standard products are Pb-free and Halogen-free.
Circuit diagram
DFN1006-2L (Bottom View)
Pin1
Pin2
Features
Stand-off voltage: 5V max.
Transient protection for each line according to
IEC61000-4-2 (ESD): ±20kV (contact discharge)
IEC61000-4-4 (EFT): 40A (5/50ns)
IEC61000-4-5 (surge): 4A (8/20μs)
Low capacitance: C
J
= 1.0pF typ.
Ultra-low leakage current: I
R
<1nA typ.
Low clamping voltage: V
CL
= 18V typ. @ I
PP
= 16A (TLP)
Solid-state silicon technology
Pin1
7. *
Pin2
7 = Device code
* = Month code ( A~Z)
Marking (Top View)
Order information
Device
Package
Shipping
10000/Tape&Reel
Applications
USB Interface
HDMI Interface
DVI
Portable Electronics
Notebooks
ESD5341N-2/TR DFN1006-2L
Will Semiconductor Ltd.
1
Revision 1.3, 2014/05/09
ESD5341N
Absolute maximum ratings
Parameter
Peak pulse power (t
p
= 8/20μs)
Peak pulse current (t
p
= 8/20μs)
ESD according to IEC61000-4-2 air discharge
ESD according to IEC61000-4-2 contact discharge
Operation junction temperature
Lead temperature
Storage temperature
Symbol
P
pk
I
PP
V
ESD
T
J
T
L
T
STG
Rating
60
4
±20
±20
125
260
-55~150
Unit
W
A
kV
o
o
o
C
C
C
Electrical characteristics
(T
A
= 25
o
C, unless otherwise noted)
Parameter
Reverse maximum working voltage
Reverse leakage current
Reverse breakdown voltage
Forward voltage
Clamping voltage
1)
1)
Symbol
V
RWM
I
R
V
BR
V
F
V
CL
R
DYN
V
CL
C
J
Condition
Min.
Typ.
Max.
5.0
Unit
V
nA
V
V
V
Ω
V
RWM
= 5V
I
T
= 1mA
I
T
= 10mA
I
PP
= 16A, t
p
= 100ns
7.0
0.6
<1
8.0
0.9
18.0
0.6
100
9.0
1.2
Dynamic resistance
Clamping voltage
2)
I
PP
= 1A, t
p
= 8/20μs
I
PP
= 4A, t
p
= 8/20μs
V
R
= 0V, f = 1MHz
1.0
11
15
1.4
V
V
pF
Junction capacitance
Notes:
1)
TLP parameter: Z
0
= 50Ω
, t
p
= 100ns, t
r
= 2ns, averaging window from 60ns to 80ns. R
DYN
is calculated from 4A to
16A.
Non-repetitive current pulse, according to IEC61000-4-5.
2)
Will Semiconductor Ltd.
2
Revision 1.3, 2014/05/09
ESD5341N
Typical characteristics
(T
A
= 25
o
C, unless otherwise noted)
110
100
90
80
70
60
50
40
30
20
10
0
Front time: T
1
= 1.25
×
T = 8µs
Time to half-value:
T
2
= 20µs
Peak pulse current (%)
100
90
T
2
Current (%)
10
0
5
T
T
1
10
15 20 25
Time (µs)
30
35
40
30ns
t
r
= 0.7~1ns
60ns
t
Time (ns)
8/20μs waveform per IEC61000-4-5
Contact discharge current waveform per IEC61000-4-2
C
J
- Junction capacitance (uniformization)
1.2
V
C
- Clamping voltage (V)
14
Pulse waveform: t
p
= 8/20µs
1.1
12
1.0
f = 1MHz
V
AC
= 50mV
10
0.9
8
0
1
2
3
4
I
PP
- Peak pulse current (A)
5
0.8
0
1
2
3
4
V
R
- Reverse voltage (V)
5
Clamping voltage vs. Peak pulse current
Capacitance vs. Reveres voltage
1000
100
Peak pulse power (W)
% of Rated power
100
80
60
40
20
10
1
0
1
10
100
Pulse time (µs)
1000
0
25
50
75
100
125
150
T
A
- Ambient temperature (
o
C)
Power derating vs. Ambient temperature
Non-repetitive peak pulse power vs. Pulse time
Will Semiconductor Ltd.
3
Revision 1.3, 2014/05/09
ESD5341N
Typical characteristics
(T
A
= 25
o
C, unless otherwise noted)
ESD clamping
(+8kV contact discharge per IEC61000-4-2)
ESD clamping
(-8kV contact discharge per IEC61000-4-2)
20
18
16
14
12
10
8
6
4
2
0
-2
TLP current (A)
Z
0
= 50
Ω
t
r
= 2ns
t
p
= 100ns
0
2
4
6
8 10 12 14 16 18 20 22
TLP voltage (V)
TLP Measurement
Will Semiconductor Ltd.
4
Revision 1.3, 2014/05/09
ESD5341N
Package outline dimensions
DFN1006-2L
Top View
Bottom View
Side View
Side View
Dimensions in millimeter
Min.
0.40
0.00
Typ.
-
-
0.125 Ref.
0.95
0.55
0.20
0.45
1.00
0.60
0.25
0.50
0.65 Typ.
1.05
0.65
0.30
0.55
Max.
0.50
0.05
Symbol
A
A1
A3
D
E
b
L
e
Recommend land pattern (Unit: mm)
0.55
0.30
0.60
Notes:
This recommended land pattern is for reference
purposes only. Please consult your manufacturing
group to ensure your PCB design guidelines are met.
0.85
1.40
Will Semiconductor Ltd.
5
Revision 1.3, 2014/05/09
电子工程世界
单片机
