ESD5411N
ESD5411N
1-Line, Bi-directional, Transient Voltage Suppressors
http//:www.sh-willsemi.com
Descriptions
The ESD5411N is a bi-directional TVS (Transient Voltage
Suppressor). It is specifically designed to protect sensitive
electronic components which are connected to low speed
data lines and control lines from over-stress caused by ESD
(Electrostatic Discharge), EFT (Electrical Fast Transients)
and Lightning.
The ESD5411N may be used to provide ESD protection up to
±30kV
(contact
and
air
discharge)
according
to
IEC61000-4-2, and withstand peak pulse current up to 6A
(8/20μs) according to IEC61000-4-5.
The ESD5411N is available in DFN1006-2L package.
Standard products are Pb-free and Halogen-free.
DFN1006-2L (Bottom View)
Pin1
Pin2
Features
Pin configuration
Stand-off voltage: 7V Max.
Transient protection for each line according to
IEC61000-4-2 (ESD): ±30kV (contact discharge)
IEC61000-4-5 (surge): 6 A (8/20μs)
Capacitance: C
J
= 17.5pF typ.
Ultra-low leakage current: I
R
< 5nA typ.
Low clamping voltage: V
CL
= 12V typ. @ I
PP
= 16A (TLP)
Solid-state silicon technology
G = Device code
* = Month code (A~Z)
Marking (Top View)
Pin1
G*
Pin2
Applications
Cellular handsets
Tablets
Laptops
Other portable devices
Network communication devices
ESD5411N-2/TR DFN1006-2L 10000/Tape&Reel
Device
Package
Shipping
Order information
Will Semiconductor Ltd.
1
Revision 1.1, 2018/04/23
ESD5411N
Absolute maximum ratings
Parameter
Peak pulse power (t
p
= 8/20μs)
Peak pulse current (t
p
= 8/20μs)
ESD according to IEC61000-4-2 air discharge
ESD according to IEC61000-4-2 contact discharge
Junction temperature
Operating temperature
Lead temperature
Storage temperature
Symbol
P
pk
I
PP
V
ESD
T
J
T
OP
T
L
T
STG
Rating
70
6
±30
±30
125
-40~85
260
-55~150
Unit
W
A
kV
o
o
o
o
C
C
C
C
Electrical characteristics
(T
A
=25
o
C, unless otherwise noted)
V
RWM
Reverse stand-off voltage
I
R
V
CL
I
PP
Reverse leakage current
Clamping voltage
Peak pulse current
I
PP
I
HOLD
V
TRIG
V
HOLD
V
BR
V
RWM
I
BR
I
TRIG
I
R
I
R
I
TRIG
I
BR
I
HOLD
V
RWM
V
BR
V
HOLD
V
TRIG
V
CL
V
CL
V
V
TRIG
Reverse trigger voltage
I
TRIG
V
BR
I
BR
I
PP
Reverse trigger current
Reverse breakdown voltage
Reverse breakdown current
V
HOLD
Reverse holding voltage
I
HOLD
Reverse holding current
Definitions of electrical characteristics
Will Semiconductor Ltd.
2
Revision 1.1, 2018/04/23
ESD5411N
Electrical characteristics
(T
A
=25
o
C, unless otherwise noted)
Parameter
Reverse maximum working voltage
Reverse leakage current
Reverse breakdown voltage
Reverse holding voltage
Clamping voltage
1)
1)
Symbol
V
RWM
I
R
V
BR
V
HOLD
V
CL
R
DYN
V
CL
V
CL
Condition
Min.
Typ.
Max.
7.0
Unit
V
nA
V
V
V
Ω
V
V
RWM
= 7V
I
T
= 1mA
I
HOLD
= 50mA
I
PP
= 16A, t
p
= 100ns
7.2
7.2
<5
100
10.5
10.5
12
0.24
Dynamic resistance
Clamping voltage
Clamping voltage
2)
V
ESD
= 8kV
I
PP
= 1A, t
p
= 8/20μs
I
PP
= 6A, t
p
= 8/20μs
V
R
= 0V, f = 1MHz
12
10
12
17.5
11.5
22
16
3)
V
V
pF
pF
Junction capacitance
C
J
V
R
= 7V, f = 1MHz
Notes:
1) TLP parameter: Z
0
= 50Ω, t
p
= 100ns, t
r
= 2ns, averaging window from 60ns to 80ns. R
DYN
is calculated from 10A to
30A.
2)
3)
Contact discharge mode, according to IEC61000-4-2.
Non-repetitive current pulse, according to IEC61000-4-5.
Will Semiconductor Ltd.
3
Revision 1.1, 2018/04/23
ESD5411N
Typical characteristics
(T
A
=25
o
C, unless otherwise noted)
100
90
Front time: T
1
= 1.25
T = 8
s
Time to half-value:
T
2
= 20
s
100
90
Peak pulse current (%)
50
T
2
Current (%)
10
10
0
0
T
T
1
20
Time (
s)
30ns
t
r
= 0.7~1ns
60ns
t
Time (ns)
8/20μs waveform per IEC61000-4-5
Contact discharge current waveform per IEC61000-4-2
11
C
J
- Junction capacitance (pF)
19
Pulse waveform: t
p
= 8/20
s
18
17
16
15
14
13
12
11
10
-7 -6 -5 -4 -3 -2 -1 0
1
2
V
C
- Clamping voltage (V)
f = 1MHz
V
AC
= 50mV
10
Pin1 to Pin2
9
Pin2 to Pin1
8
7
0
1
2
3
4
5
6
7
3
4
5
6
7
I
PP
- Peak pulse current (A)
V
R
- Reverse voltage (V)
Clamping voltage vs. Peak pulse current
1000
Capacitance vs. Reverse voltage
100
Peak pulse power (W)
% of Rated power
100
80
60
40
20
0
10
1
1
10
100
Pulse time (
s)
1000
0
25
50
75
100
o
125
150
T
A
- Ambient temperature ( C)
Non-repetitive peak pulse power vs. Pulse time
Power derating vs. Ambient temperature
Will Semiconductor Ltd.
4
Revision 1.1, 2018/04/23
ESD5411N
ESD clamping
(+8kV contact discharge per IEC61000-4-2)
ESD clamping
(-8kV contact discharge per IEC61000-4-2)
40
30
TLP current (A)
Z
0
= 50
t
r
= 2ns
t
p
= 100ns
20
10
0
-10
-20
-30
-40
-20
-15
-10
-5
0
5
10
15
20
TLP voltage (V)
TLP Measurement
Will Semiconductor Ltd.
5
Revision 1.1, 2018/04/23
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