ESD5451N
ESD5451N
1-Line, Bi-directional, Transient Voltage Suppressors
http//:www.sh-willsemi.com
Descriptions
The ESD5451N is a bi-directional TVS (Transient Voltage
Suppressor). It is specifically designed to protect sensitive
electronic components which are connected to low speed
data lines and control lines from over-stress caused by ESD
(Electrostatic Discharge), EFT (Electrical Fast Transients)
and Lightning.
The ESD5451N may be used to provide ESD protection up to
±30kV
(contact
and
air
discharge)
according
to
IEC61000-4-2, and withstand peak pulse current up to 8A
(8/20μs) according to IEC61000-4-5.
The ESD5451N is available in DFN1006-2L package.
Standard products are Pb-free and Halogen-free.
Circuit diagram
DFN1006-2L (Bottom View)
Pin1
Pin2
Features
Reverse stand-off voltage: ±5V Max
Transient protection for each line according to
IEC61000-4-2 (ESD): ±30kV (contact and air discharge)
IEC61000-4-4 (EFT): 40A (5/50ns)
IEC61000-4-5 (surge): 8A (8/20μs)
Capacitance: C
J
= 17.5pF typ.
Low leakage current: I
R
< 1nA typ.
Low clamping voltage: V
CL
= 9V typ. @ I
PP
= 16A (TLP)
Solid-state silicon technology
Pin1
2
*
Pin2
2 = Device code
* = Month code ( A~Z)
Marking (Top View)
Applications
Cellular handsets
Tablets
Laptops
Other portable devices
Network communication devices
Device
Order information
Package
Shipping
ESD5451N-2/TR DFN1006-2L 10000/Tape&Reel
Will Semiconductor Ltd.
1
Revision 1.5, 2017/09/18
ESD5451N
Absolute maximum ratings
Parameter
Peak pulse power (t
p
= 8/20μs)
Peak pulse current (t
p
= 8/20μs)
ESD according to IEC61000-4-2 air discharge
ESD according to IEC61000-4-2 contact discharge
Operation junction temperature
Lead temperature
Storage temperature
Symbol
P
pk
I
PP
V
ESD
T
J
T
L
T
STG
Rating
80
8
±30
±30
125
260
-55~150
Unit
W
A
kV
o
o
o
C
C
C
Electrical characteristics
(T
A
=25
o
C, unless otherwise noted)
I
V
RWM
Reverse stand-off voltage
I
R
V
CL
I
PP
Reverse leakage current
Clamping voltage
Peak pulse current
I
PP
I
HOLD
V
TRIG
V
HOLD
V
BR
V
RWM
I
BR
I
TRIG
I
R
I
R
I
TRIG
I
BR
I
HOLD
V
RWM
V
BR
V
HOLD
V
TRIG
V
CL
V
CL
V
V
TRIG
Reverse trigger voltage
I
TRIG
V
BR
I
BR
I
PP
Reverse trigger current
Reverse breakdown voltage
Reverse breakdown current
V
HOLD
Reverse holding voltage
I
HOLD
Reverse holding current
Definitions of electrical characteristics
Will Semiconductor Ltd.
2
Revision 1.5, 2017/09/18
ESD5451N
Electrical characteristics
(T
A
=25
o
C, unless otherwise noted)
Parameter
Reverse stand-off voltage
Reverse leakage current
Reverse breakdown voltage
Reverse holding voltage
Clamping voltage
Clamping voltage
1)
2)
Symbol
V
RWM
I
R
V
BR
V
HOLD
V
CL
V
CL
Condition
Min.
Typ.
Max.
±5
Unit
V
nA
V
V
V
RWM
= 5V
I
BR
= 1mA
I
HOLD
= 50mA
I
PP
= 16A, t
p
= 100ns
V
ESD
= 8kV
I
PP
= 1A, t
p
= 8/20μs
5.1
5.1
<1
100
9
9
6.5
8.5
10
0.20
V
V
V
V
V
Ω
22
16
pF
pF
Clamping voltage
3)
V
CL
I
PP
= 5A, t
p
= 8/20μs
I
PP
= 8A, t
p
= 8/20μs
Dynamic resistance
1)
R
DYN
C
J
V
R
= 0V, f = 1MHz
V
R
= 5V, f = 1MHz
17.5
11.5
Junction capacitance
Notes:
1) TLP parameter: Z
0
= 50Ω , t
p
= 100ns, t
r
= 2ns, averaging window from 60ns to 80ns. R
DYN
is calculated from 4A to
16A.
2)
3)
Contact discharge mode, according to IEC61000-4-2.
Non-repetitive current pulse, according to IEC61000-4-5.
Will Semiconductor Ltd.
3
Revision 1.5, 2017/09/18
ESD5451N
Typical characteristics
(T
A
=25
o
C, unless otherwise noted)
110
100
90
80
70
60
50
40
30
20
10
0
Front time: T
1
= 1.25
T = 8
s
Time to half-value:
T
2
= 20
s
100
90
Peak pulse current (%)
T
2
Current (%)
10
0
5
T
T
1
10
15 20 25
Time (
s)
30
35
40
30ns
t
r
= 0.7~1ns
60ns
t
Time (ns)
8/20μs waveform per IEC61000-4-5
Contact discharge current waveform per IEC61000-4-2
10
V
C
- Clamping voltage (V)
9
8
C
J
- Junction capacitance (pF)
Pulse waveform: t
p
= 8/20
s
Pin1 to Pin2
20
18
16
14
12
10
-5
f = 1MHz
V
AC
= 50mV
Pin2 to Pin1
7
6
5
0
2
4
6
8
10
-4
-3
-2
-1
0
1
2
3
4
5
I
PP
- Peak pulse current (A)
V
R
- Reverse voltage (V)
Clamping voltage vs. Peak pulse current
1000
Capacitance vs. Reveres voltage
100
Peak pulse power (W)
% of Rated power
80
60
40
20
0
100
10
1
10
100
Pulse time (
s)
1000
0
25
50
75
100
o
125
150
T
A
- Ambient temperature ( C)
Non-repetitive peak pulse power vs. Pulse time
Will Semiconductor Ltd.
4
Power derating vs. Ambient temperature
Revision 1.5, 2017/09/18
ESD5451N
Typical characteristics
(T
A
=25
o
C, unless otherwise noted)
ESD clamping
ESD clamping
(+8kV contact discharge per IEC61000-4-2)
20
16
12
TLP current (A)
(-8kV contact discharge per IEC61000-4-2)
8
4
0
-4
-8
-12
-16
-20
-12 -10 -8 -6 -4 -2
0
2
4
Z
0
= 50
t
r
= 2ns
t
p
= 100ns
6
8
10 12
TLP voltage (V)
TLP Measurement
Will Semiconductor Ltd.
5
Revision 1.5, 2017/09/18
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