ESD5641DXX
ESD5641DXX
1-Line, Uni-directional, Transient Voltage Suppressor
http//:www.sh-willsemi.com
Descriptions
The ESD5641DXX is a transient voltage suppressor
designed to protect power interfaces. It is suitable to replace
multiple discrete components in portable electronics.
The ESD5641DXX is specifically designed to protect USB
port. TVS diode with higher surge capability is used to protect
USB voltage bus pin.
The ESD5641DXX is available in DFN2×2-3L package.
Standard products are Pb-free and Halogen-free.
PIN3
3
3
1 and 2
Circuit diagram
Features
Reverse stand-off voltage: 7.5V ~ 15V
Surge protection according to IEC61000-4-5
8/20μs waveform:
10/1000μs waveform:
Low clamping voltage
Solid-state silicon technology
Pin configuration (Top View)
I
PPM
see
Table 4
1
PIN1
2
PIN2
Surge protection according to IEC61643-321
I
PPM
see
Table 4
Applications
Power supply protection
Power management
Order information
Table 1.
Device
code
07
10
12
15
5641
**YW
Pin1
Indicator
Device
ESD5641D07-3/TR
ESD5641D10-3/TR
ESD5641D12-3/TR
ESD5641D15-3/TR
Package
DFN2×2-3L
DFN2×2-3L
DFN2×2-3L
DFN2×2-3L
Shipping
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
5641 = Series code
**
YW
= Device code
= Date code
Marking
Will Semiconductor Ltd.
1
Revision 1.5, 2017/12/11
ESD5641DXX
Absolute maximum ratings
Table 2.
Parameter
Peak pulse power (tp=8/20μs)
1)3)
Peak pulse power (tp=10/1000μs)
2)3)
ESD according to IEC61000-4-2 air discharge
ESD according to IEC61000-4-2 contact discharge
Junction temperature
Operating temperature
Lead temperature
Storage temperature
Notes:
1)
2)
3)
Non-repetitive current pulse, according to IEC61000-4-5.
（
8/20μs current waveform
）
Non-repetitive current pulse, according to IEC61643-321.
（
10/1000μs current waveform
）
Measured from pin 3 to pin 1 and pin 2.
Symbol
P
PK
P
PK
V
ESD
T
J
T
OP
T
L
T
STG
Rating
4000
350
±30
±30
125
-40~85
260
-55~150
Unit
W
W
kV
o
o
o
o
C
C
C
C
Electrical characteristics
(T
A
= 25
o
C, unless otherwise noted)
I
I
PP
V
F
I
F
V
FC
I
PP
Forward voltage
Forward current
Forward clamping voltage
Peak pulse current
V
RWM
Reverse stand-off voltage
I
R
V
BR
V
CL
I
PP
I
BR
I
R
V
RWM
V
BR
V
CL
I
F
Reverse leakage current
Reverse breakdown voltage
Clamping voltage
Peak pulse current
V
FC
V
F
V
I
PP
Definitions of electrical characteristics
Will Semiconductor Ltd.
2
Revision 1.5, 2017/12/11
ESD5641DXX
Electrical characteristics
(T
A
= 25
o
C, unless otherwise noted)
Table 3.
Reverse
Standoff
Type number
Voltage
V
RWM
(V)
Max.
ESD5641D07
ESD5641D10
ESD5641D12
ESD5641D15
7.5
10.0
12.0
15.0
Breakdown voltage
V
BR
(V) I
BR
= 1mA
Min.
8.0
11.5
13.0
16.0
Reverse
leakage current
I
RM
(nA) at V
RWM
Typ.
10
1
1
1
Junction
Forward voltage
V
F
(V) I
F
= 20mA
Min.
0.45
0.45
0.45
0.45
capacitance
F=1MHz,
VR=0V (pF)
Typ.
2200
1500
1200
1000
Typ.
9.0
13.5
15.0
17.5
Max.
10.0
15.5
17.0
19.0
Max.
1000
500
100
100
Max.
1.25
1.25
1.25
1.25
Max.
3000
2000
1800
1500
Table 4.
Rated peak pulse
Type number
current
I
PP
（A）
Max.
ESD5641D07
ESD5641D10
ESD5641D12
ESD5641D15
190
170
150
130
1)3)
Clamping voltage
V
CL
(V) at I
PP
（A）
Max.
18
23
27
30
1)3)
Rated peak pulse
current
I
PP
（A）
Max.
28
22
16
13
2)3)
Clamping voltage
V
CL
(V) at I
PP
（A）
2)3)
Max.
13
18
20
25
Notes:
1)
2)
3)
Non-repetitive current pulse, according to IEC61000-4-5. (8/20μs current waveform)
Non-repetitive current pulse, according to IEC61643-321. (10/1000μs current waveform)
Measured from pin 3 to pin 1 and pin 2.
Will Semiconductor Ltd.
3
Revision 1.5, 2017/12/11
ESD5641DXX
Typical characteristics
(T
A
= 25
o
C, unless otherwise noted)
100
90
Front time: T
1
= 1.25
T = 8
s
Time to half-value:
T
2
= 20
s
Peak pulse current (%)
50
T
2
Peak pulse current (%)
100
90
Front time: T
1
= 1.25
T = 10
s
Time to half-value:
T
2
= 1000
s
50
T
2
10
0
0
T
T
1
20
Time (
s)
10
0
0
T
T
1
1000
Time (
s)
8/20μs waveform per IEC61000-4-5
30
10/1000μs waveform per IEC61643-321
30
Pulse waveform:t
p
=8/20μs
Vc-Clamping Voltage (V)
ESD5641D07
ESD5641D10
ESD5641D12
ESD5641D15
Pulse waveform:t
p
=10/1000μs
25
Vc-Clamping Voltage (V)
ESD5641D07
ESD5641D10
ESD5641D12
ESD5641D15
25
20
20
15
15
10
10
5
0
50
100
150
200
5
0
5
10
15
20
25
30
Ipp-Peak Pulse Current (A)
Ipp-Peak Pulse Current (A)
Clamping voltage vs. Peak pulse current
100
Clamping voltage vs. Peak pulse current
Peak pulse power (W)
10000
% of Rated power
80
60
40
20
0
1000
100
1
10
100
Pulse time (
s)
1000
0
25
50
75
100
o
125
150
T
A
- Ambient temperature ( C)
Non-repetitive peak pulse power vs. Pulse time
Power derating vs. Ambient temperature
Will Semiconductor Ltd.
4
Revision 1.5, 2017/12/11
ESD5641DXX
Package outline dimensions
DFN2×2-3L
Symbol
A
A1
A3
b
Dimensions In Millimeters
Min.
0.50
0.00
0.25
1.90
1.90
0.95
1.40
1.20
0.20
0.20
0.33
0.13
Typ.
0.58
0.02
0.10 REF.
0.30
2.00
2.00
1.05
1.50
1.30
0.25
0.30
0.39
-
0.35
2.10
2.10
1.15
1.60
1.40
0.30
0.40
0.45
-
Max.
0.65
0.05
Recommended land pattern (Unit: mm)
1.30
D
E
D2
E2
e
H
K
L
R
Notes:
1.10
1.05
0.40
0.50
This recommended land pattern is for reference
0.40
1.60
0.25
purposes only. Please consult your manufacturing
group to ensure your PCB design guidelines are met.
Will Semiconductor Ltd.
5
Revision 1.5, 2017/12/11
电子工程世界
综合技术交流
