ESD9N5B
ESD9N5B
1-Line, Bi-directional, Normal-Capacitance,
Transient Voltage Suppressor
http//:www.sh-willsemi.com
Descriptions
The ESD9N5B is a Bi-directional transient voltage
suppressor (TVS) to protect sensitive electronic
components from electrostatic discharge (ESD). It is
particularly well-suited for cellular phones, PMP, MID,
PDA, digital cameras and other electronic equipment.
The ESD9N5B may be used to provide ESD protection
up to ±30kV (contact and air discharge) according to
IEC61000-4-2, and withstand peak pulse current up to
8A (8/20μs) according to IEC61000-4-5.
The ESD9N5B is available in DFN1006-2L package.
Standard products are Pb-free and Halogen-free.
Pin configuration
DFN1006-2L (Bottom View)
Pin1
Pin2
Features
Reverse stand-off voltage: ±5V Max
Transient protection for each line according to
IEC61000-4-2 (ESD): ±30kV (Contact and Air)
IEC61000-4-4 (EFT): 40A (5/50ns)
IEC61000-4-5 (surge): 8A (8/20μs)
Capacitance: C
J
= 17.5pF typ.
Low leakage current: I
R
< 1nA typ.
Low clamping voltage
Solid-state silicon technology
* = Month (A~Z)
B = Device code
Marking
*
B
Order information
Device
ESD9N5B-2/TR
Package
DFN1006-2L
Shipping
10000/Tape&Reel
Applications
Cell phone
PMP
MID
PDA
Digital camera
Other electronics equipment
Will Semiconductor Ltd.
1
Revision 3.0, 2016/12/13
ESD9N5B
Absolute maximum ratings
Parameter
Peak pulse power (tp=8/20μs)
Peak pulse current (tp=8/20μs)
ESD according to IEC61000-4-2 air discharge
ESD according to IEC61000-4-2 contact discharge
Junction temperature
Operating temperature
Lead temperature
Storage temperature
V
ESD
T
J
T
OP
T
L
T
STG
Symbol
Ppk
Ipp
Rating
96
8
±30
kV
±30
125
-40~85
260
-55~150
o
o
o
o
Unit
W
A
C
C
C
C
Electrical characteristics
(T
A
=25
o
C, unless otherwise noted)
I
V
RWM
Reverse stand-off voltage
I
R
V
CL
I
PP
Reverse leakage current
Clamping voltage
Peak pulse current
I
PP
I
HOLD
V
TRIG
V
HOLD
V
BR
V
RWM
I
BR
I
TRIG
I
R
I
R
I
TRIG
I
BR
I
HOLD
V
RWM
V
BR
V
HOLD
V
TRIG
V
CL
V
CL
V
V
TRIG
Reverse trigger voltage
I
TRIG
V
BR
I
BR
I
PP
Reverse trigger current
Reverse breakdown voltage
Reverse breakdown current
V
HOLD
Reverse holding voltage
I
HOLD
Reverse holding current
Definitions of electrical characteristics
Will Semiconductor Ltd.
2
Revision 3.0, 2016/12/13
ESD9N5B
Electronics characteristics
(Ta=25
o
C, unless otherwise noted)
Parameter
Reverse stand-off voltage
Reverse leakage current
Reverse breakdown voltage
Reverse holding voltage
Clamping voltage
Clamping voltage
Clamping voltage
1)
2)
Symbol
V
RWM
I
R
V
BR
V
HOLD
V
CL
V
CL
V
CL
Condition
Min.
Typ.
Max.
±5.0
Unit
V
μA
V
V
V
V
V
RWM
= 5.0V
I
BR
= 1mA
I
HOLD
= 50mA
I
PP
= 16A, t
p
= 100ns
V
ESD
= 8kV
I
PP
= 1A, t
p
= 8/20μs
I
PP
= 8A, t
p
= 8/20μs
V
R
= 0V, f = 1MHz
17.5
11.5
5.6
5.6
11
11
1
8.5
8.5
3)
9
12
22
15
V
V
pF
pF
Junction capacitance
C
J
V
R
= 5.0V, f = 1MHz
Notes:
1) TLP parameter: Z
0
= 50Ω, t
p
= 100ns, t
r
= 2ns, averaging window from 60ns to 80ns. R
DYN
is calculated from 4A to
16A.
2)
3)
Contact discharge mode, according to IEC61000-4-2.
Non-repetitive current pulse, according to IEC61000-4-5.
Will Semiconductor Ltd.
3
Revision 3.0, 2016/12/13
ESD9N5B
Typical characteristics
(Ta=25
o
C, unless otherwise noted)
100
90
Front time: T
1
= 1.25
T = 8μs
Time to half-value:
T
2
= 20μs
Peak pulse current (%)
100
90
50
T
2
Current (%)
10
10
0
0
T
5
T
1
10
15
Time (μs)
20
25
30
t
r
= 0.7~1ns
30ns
Time (ns)
60ns
t
8/20μs waveform per IEC61000-4-5
11
Contact discharge current waveform per IEC61000-4-2
C
J
- Junction capacitance (pF)
20
18
16
14
12
10
-5
f = 1MHz
V
AC
= 50mV
V
C
- Clamping voltage (V)
Pulse waveform: t
p
= 8/20
s
10
Pin2 to Pin1
Pin1 to Pin2
9
8
7
0
1
2
3
4
5
6
7
8
9
-4
-3
-2
-1
0
1
2
3
4
5
I
PP
- Peak pulse current (A)
V
R
- Reverse voltage (V)
Clamping voltage vs. Peak pulse current
Capacitance vs. Reverse voltage
1000
100
Peak pulse power (W)
100
% of Rated power
80
60
40
20
0
10
1
10
100
Pulse time (
s)
1000
0
25
50
75
100
o
125
150
T
A
- Ambient temperature ( C)
Non-repetitive peak pulse power vs. Pulse time
Power derating vs. Ambient temperature
Will Semiconductor Ltd.
4
Revision 3.0, 2016/12/13
ESD9N5B
Typical characteristics
(T
A
=25
o
C, unless otherwise noted)
10V/div
10V/div
20ns/div
20ns/div
ESD clamping
(+8kV contact discharge per IEC61000-4-2)
24
20
16
12
8
4
0
-4
-8
-12
-16
-20
-24
-14 -12 -10 -8 -6 -4 -2 0
ESD clamping
(-8kV contact discharge per IEC61000-4-2)
TLP current (A)
Z
0
= 50
t
r
= 2ns
t
p
= 100ns
2
4
6
8 10 12 14
TLP voltage (V)
TLP Measurement
Will Semiconductor Ltd.
5
Revision 3.0, 2016/12/13
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