ESD9N5BU
ESD9N5BU
1-Line, Bi-directional, Ultra-low Capacitance,
Transient Voltage Suppressor
http//:www.sh-willsemi.com
Descriptions
The ESD9N5BU is a transient voltage suppressors (TVS)
which provide a very high level protection for sensitive
electronic components that may be subjected
to
DFN1006-2L (Bottom View)
electrostatic discharge (ESD). It is designed to replace
multiplayer varistors (MLV) in consumer equipments
applications such as mobile phone, notebook, PAD, STB,
LCD TV etc.
The ESD9N5BU was past ESD transient voltage up to
±12KV
(contact)
according
to
IEC61000-4-2
and
Pin1
Pin2
withstand peak current up to 3A for 8/20μs pulse
according to IEC61000-4-5.
The ESD9N5BU is available in DFN1006 package.
Standard products are Pb-free and Halogen-free.
Circuit Diagram
Features
Reverse stand-off voltage: ±5.0V max.
Transient protection for each line according to
IEC61000-4-2 (ESD)
IEC61000-4-4 (EFT)
Ultra-low capacitance
Low clamping voltage
Low leakage current
Small package
: ±12kV (contact discharge)
: ±15kV (air discharge)
:40A (5/50ns)
IEC61000-4-5 (surge) :3A (8/20μs)
*
U
= Month (A~Z)
= Device code
Pin1
*U
Marking (Top View)
Pin2
Order information
Device
ESD9N5BU-2/TR
Package
DFN1006-2L
Shipping
10000/Tape&Reel
Applications
Mobile phone
PAD
Notebook
STB
LCD TV
Digital camera
Other electronics equipments
1
Will Semiconductor Ltd.
Revision 2.2, 2014/10/14
ESD9N5BU
Absolute maximum ratings
Parameter
Peak pulse power (tp=8/20μs)
Peak pulse current (tp=8/20μs)
ESD voltage IEC61000-4-2 air
ESD voltage IEC61000-4-2 contact
Junction temperature
Operating temperature
Lead temperature
Storage temperature
Symbol
Ppk
Ipp
V
ESD
T
J
T
OP
T
L
Tsg
Rating
54
3
±15
±12
125
-40~85
260
-55~150
Unit
W
A
KV
o
o
o
o
C
C
C
C
Electronics characteristics
(Ta=25
o
C, unless otherwise noted)
Parameter
Reverse stand-off voltage
Reveres leakage current
Reveres breakdown voltage
Clamping voltage
1)
1)
Symbol
V
RWM
I
R
V
BR
V
CL
R
DYN
V
CL
V
CL
V
C
Condition
Min.
Typ.
Max.
±5.0
Unit
V
μA
V
V
Ω
V
V
V
RWM
= 5V
I
T
= 1mA
I
PP
= 16A, t
p
= 100ns
7.0
8.5
35
1.61
V
ESD
= 6kV
V
ESD
= 8kV
Ipp=1A tp=8/20us
Ipp=3A tp=8/20us
27
35
11.8
16
0.45
1.0
10.0
Dynamic resistance
Clamping voltage
Clamping voltage
Clamping voltage
2)
2)
3)
14
18
0.7
V
V
pF
Junction capacitance
C
J
F=1MHz, V
R
=0V
Notes:
1) TLP parameter: Z
0
= 50Ω , t
p
= 100ns, t
r
= 2ns, averaging window from 60ns to 80ns. R
DYN
is calculated from 4A to
16A.
2)
3)
Contact discharge mode, according to IEC61000-4-2.
Non-repetitive current pulse, according to IEC61000-4-5.
Will Semiconductor Ltd.
2
Revision 2.2, 2014/10/14
ESD9N5BU
Typical characteristics
(T
A
=25
o
C, unless otherwise noted)
100
90
Front time: T
1
= 1.25
×
T = 8µs
Time to half-value:
T
2
= 20µs
100
90
Peak pulse current (%)
50
T
2
Current (%)
10
10
0
0
T
T
1
20
Time (µs)
30ns
t
r
= 0.7~1ns
60ns
t
Time (ns)
8/20μs waveform per IEC61000-4-5
Contact discharge current waveform per IEC61000-4-2
20
C - Junction capacitance (pF)
0.6
Pulse waveform: tp=8/20us
F
signal
=1MHz
0.5
V
signal
=50mVrms
V
C
- Clamping voltage (V)
16
12
0.4
8
0.3
4
0
1
2
3
Ipp - Peak pulse current (A)
4
0.2
0
1
2
3
4
V
R
- Reverse voltage (V)
5
Clamping voltage vs. Peak pulse current
Capacitance vs. Reverse voltage
1000
100
Peak Pulse Power (W)
100
% of Rated power
80
60
40
20
10
1
0
1
10
100
Pulse Duration(us)
1000
0
25
50
75
100
125
150
T
A
- Ambient temperature (
o
C)
Power derating vs. Ambient temperature
Non-repetitive peak pulse power vs. Pulse time
Will Semiconductor Ltd.
3
Revision 2.2, 2014/10/14
ESD9N5BU
Typical characteristics
(T
A
=25
o
C, unless otherwise noted)
ESD clamping
(+8kV contact discharge per IEC61000-4-2)
ESD clamping
(-8kV contact discharge per IEC61000-4-2)
20
15
TLP current (A)
10
5
0
-5
-10
-15
-20
Z
0
= 50
Ω
t
r
= 2ns
t
p
= 100ns
-40 -30 -20 -10 0 10 20
TLP voltage (V)
TLP Measurement
30
40
Will Semiconductor Ltd.
4
Revision 2.2, 2014/10/14
ESD9N5BU
Package outline dimensions
DFN1006-2L
Top View
Bottom View
Side View
Min.
A
A1
A3
D
E
b
L
e
0.95
0.55
0.20
0.45
0.30
0.00
Typ.
-
-
0.125 Ref.
1.00
0.60
0.25
0.50
0.65 Typ.
Max.
0.50
0.05
1.05
0.65
0.30
0.55
Recommend land pattern (Unit: mm)
Notes:
This recommended land pattern is for reference
purposes only. Please consult your manufacturing
group to ensure your PCB design guidelines are met.
Will Semiconductor Ltd.
5
Revision 2.2, 2014/10/14
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