ESD9NS5V
ESD9NS5V
2-Lines, Bi-directional, Transient Voltage Suppressors
http//:www.sh-willsemi.com
Descriptions
The ESD9NS5V is a transient voltage suppressors (TVS)
which provide a very high level protection for sensitive
electronic
multilayer
components
varistors
that
may
in
be
subjected
to
electrostatic discharge (ESD). It is designed to replace
(MLV)
consumer
equipment
applications such as mobile phone, notebook, PDA, STB,
LCD TV etc.
The ESD9NS5V was past ESD transient voltage up to
±30kV (contact) according to IEC61000-4-2 and withstand
peak current up to 9A for 8/20μs pulse according to
IEC61000-4-5.
The ESD9NS5V is available in DFN1006-3L package.
Standard products are Pb-free and Halogen-free.
S*
DFN1006-3L
3
2
1
Pin configuration (Top view)
Features
Reverse stand-off voltage
Peak current (tp=8/20µs)
Transient protection
IEC61000-4-2, Level 4
Low clamping voltage
Low leakage current
Small package
Device
ESD9NS5V-3/TR
: ±30kV air
: ±30kV contact
: 5V
: 9A
S
DFN1006-3L
= Device code
* = Month code (A~Z)
Marking
Order information
Package
DFN1006-3L
Shipping
10000/Tape&Reel
Applications
Cell phone
PMP
MID
PDA
Digital camera
Other electronic equipment
Will Semiconductor Ltd.
1
Revision 2.0, 2016/07/20
ESD9NS5V
Absolute maximum ratings
Parameter
Peak pulse power (tp=8/20μs) (pin1 or pin3 to pin2)
Peak pulse power (tp=8/20μs) (pin2 to pin1 or pin3)
Peak pulse current (tp=8/20μs)
ESD voltage IEC61000-4-2 air
ESD voltage IEC61000-4-2 contact
Junction temperature
Operating temperature
Lead temperature
Storage temperature
Symbol
P
pk
I
pp
V
ESD
T
J
T
OP
T
L
T
STG
Rating
100
150
9
±30
±30
125
-40~85
260
-55~150
Unit
W
W
A
kV
o
o
o
o
C
C
C
C
Electrical characteristics
(T
A
= 25
o
C, unless otherwise noted)
I
V
RWM
Reverse stand-off voltage
I
R
V
CL
I
PP
Reverse leakage current
Clamping voltage
Peak pulse current
I
PP
I
HOLD
V
CL
V
HOLD
V
TRIG
V
RWM
I
TRIG
I
R
I
R
I
TRIG
I
HOLD
V
RWM
V
TRIG
V
HOLD
V
CL
V
V
TRIG
Reverse trigger voltage
I
TRIG
Reverse trigger current
V
HOLD
Reverse holding voltage
I
PP
I
HOLD
Reverse holding current
Definitions of electrical characteristics
Will Semiconductor Ltd.
2
Revision 2.0, 2016/07/20
ESD9NS5V
Electrical characteristics
(Ta=25
o
C, unless otherwise noted)
Parameter
Reverse stand-off voltage
Reverse leakage current
Reverse breakdown voltage
Symbol
V
RWM
I
R
V
BR
V
RWM
=5V
I
BR
=1mA
I
PP
= 16A, t
p
= 100ns
Clamping voltage
1)
Condition
Min.
Typ.
Max.
5.0
1
9.5
Unit
V
µA
V
V
V
V
V
V
CL
pin1 or pin3 to pin2
I
PP
= 16A, t
p
= 100ns
pin2 to pin1 or pin3
V
ESD
= 8kV
pin1 or pin3 to pin2
V
ESD
= 8kV
pin2 to pin1 or pin3
I
pp
=1A, t
p
= 8/20μs
pin1 or pin3 to pin2
I
pp
=9A, t
p
= 8/20μs
pin1 or pin3 to pin2
I
pp
=1A, t
p
= 8/20μs
pin2 to pin1 or pin3
I
pp
=9A, t
p
= 8/20μs
pin2 to pin1 or pin3
pin1 or pin3 to pin2
6
11
10
15
7
11
11
17
0.05
0.11
24
30
Clamping voltage
2)
V
CL
V
V
V
V
Ω
Ω
pF
Clamping voltage
3)
V
C
Clamping voltage
3)
V
C
Dynamic resistance
1)
R
DYN
pin2 to pin1 or pin3
C
J
f=1MHz, V
R
=0V
Junction capacitance
Notes:
1) TLP parameter: Z
0
= 50Ω, t
p
= 100ns, t
r
= 2ns, averaging window from 60ns to 80ns. R
DYN
is calculated from 4A to
16A.
2)
3)
Contact discharge mode, according to IEC61000-4-2.
Non-repetitive current pulse, according to IEC61000-4-5.
Will Semiconductor Ltd.
3
Revision 2.0, 2016/07/20
ESD9NS5V
Typical characteristics
(T
A
=25
o
C, unless otherwise noted)
Front time: T
1
= 1.25
T = 8
s
Time to half-value:
T
2
= 20
s
Peak pulse current (%)
100
90
100
90
50
T
2
Current (%)
10
T
T
1
10
0
0
20
Time (
s)
30ns
t
r
= 0.7~1ns
60ns
t
Time (ns)
8/20μs waveform per IEC61000-4-5
Contact discharge current waveform per IEC61000-4-2
C - Junction capacitance (pF)
30
f =1MHz
25
V
AC
=50mV
16
Pulse waveform: tp=8/20μs
V
C
- Clamping voltage (V)
14
pin2 to pin1 or pin3
12
10
8
6
0
2
4
6
8
10
pin1 or pin3 to pin2
20
15
10
-4
-2
0
2
4
Ipp - Peak pulse current (A)
V
R
- Reverse voltage (V)
Clamping voltage vs. Peak pulse current
1000
Capacitance vs. Reverse voltage
100
Peak pulse power (W)
100
% of Rated power
80
60
40
20
0
10
1
10
100
Pulse time (
s)
1000
0
25
50
75
100
o
125
150
T
A
- Ambient temperature ( C)
Non-repetitive peak pulse power vs. Pulse time
Power derating vs. Ambient temperature
Will Semiconductor Ltd.
4
Revision 2.0, 2016/07/20
ESD9NS5V
Typical characteristics
(T
A
=25
o
C, unless otherwise noted)
10V/div
10V/div
20ns/div
20ns/div
ESD clamping
(+8kV contact discharge per IEC61000-4-2)
ESD clamping
(-8kV contact discharge per IEC61000-4-2)
20
TLP current (A)
10
pin2 to pin1 or pin3
0
pin1 or pin3 to pin2
-10
-20
-12 -10 -8
-6
-4
-2
0
2
Z
0
= 50
t
r
= 2ns
t
p
= 100ns
4
6
8
TLP voltage (V)
TLP Measurement
Will Semiconductor Ltd.
5
Revision 2.0, 2016/07/20
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