ESD9X7V
ESD9X7V
1-Line, Uni-directional, Normal capacitance Transient
Voltage Suppressor
http//:www.sh-willsemi.com
Descriptions
The ESD9X7V is a transient voltage suppressor (TVS)
which provides a very high level protection for sensitive
electronic components that may be subjected to
electrostatic discharge (ESD). It is designed to replace
multilayer varistors (MLV) in consumer equipment
applications such as mobile phone, notebook, PAD, STB,
LCD TV etc.
The ESD9X7V was past ESD transient voltage up to
±30kV
(contact)
according
to
IEC61000-4-2
and
withstand peak current up to 9.5A for 8/20µs pulse
according to IEC61000-4-5.
The ESD9X7V is available in FBP-02C package.
Standard products are Pb-free and Halogen-free.
*
J
= Month (A~Z)
= Device code
Pin configuration (Top view)
Pin1
Pin2
FBP-02C
*
J
Marking (Top View)
Features
Working voltage
Peak power (tp=8/20µs)
ESD protection
IEC61000-4-2 (Contact)
IEC61000-4-2 (Air)
Low leakage current
Small package
: ±30kV
: ±30kV
: 7V
: 161W
Device
ESD9X7V-2/TR
Package
FBP-02C
Shipping
10000/Tape&Reel
Order information
Applications
Mobile phone
PAD
Notebook
STB
LCD TV
Digital camera
Other electronic equipment
Will Semiconductor Ltd.
1
Revision 2.3, 2016/07/06
ESD9X7V
Absolute maximum ratings
Parameter
Peak pulse power (t
p
= 8/20μs)
Peak pulse current (t
p
= 8/20μs)
ESD according to IEC61000-4-2 air discharge
ESD according to IEC61000-4-2 contact discharge
Junction temperature
Operating temperature
Lead temperature
Storage temperature
Symbol
Ppk
Ipp
V
ESD
T
J
T
OP
T
L
T
STG
Rating
161
9.5
±30
±30
125
-40~85
260
-55~150
Unit
W
A
kV
o
o
o
o
C
C
C
C
Electronics characteristics
(Ta=25
o
C, unless otherwise noted)
Parameter
Reverse stand-off voltage
Reverse leakage current
Reverse breakdown voltage
Forward voltage
Clamping voltage
Junction capacitance
Symbol
V
RWM
I
R
V
BR
V
F
V
C
C
J
V
RWM
=7V
I
T
=1mA
I
F
=10mA
Ipp=1A, tp=8/20µs
Ipp=9.5A, tp=8/20µs
f=1MHz, V
R
=0V
49
7.5
0.55
8.0
0.9
Condition
Min.
Typ.
Max.
7
0.05
8.8
1.25
10
17
65
Unit
V
µA
V
V
V
V
pF
Will Semiconductor Ltd.
2
Revision 2.3, 2016/07/06
ESD9X7V
T
ypical
100
90
characteristics
(Ta=25
o
C, unless otherwise noted)
Front time: T
1
= 1.25
T = 8
s
Time to half-value:
T
2
= 20
s
100
90
Peak pulse current (%)
50
T
2
Current (%)
10
10
0
0
T
T
1
20
Time (
s)
t
r
= 0.7~1ns
30ns
Time (ns)
60ns
t
8/20µs waveform per IEC61000-4-5
Contact discharge current waveform per IEC61000-4-2
V
C
- Clamping voltage (V)
Pulse waveform: t
p
=8/20μs
15
C - Junction capacitance (pF)
20
60
50
40
30
20
10
f = 1MHz
V
AC
= 50mV
10
5
0
0
3
6
9
12
0
1
2
3
4
5
6
7
Ipp - Peak pulse current (A)
V
R
- Reverse voltage (V)
Clamping voltage vs. Peak pulse current
Capacitance vs. Reverse voltage
1000
100
80
60
40
20
Peak Pulse Power (W)
100
10
% of Rated power
0
1
10
100
Pulse time (μs)
1000
0
25
50
75
100
o
125
150
T
A
- Ambient temperature ( C)
Non-repetitive peak pulse power vs. Pulse time
Power derating vs. Ambient temperature
Will Semiconductor Ltd.
3
Revision 2.3, 2016/07/06
ESD9X7V
T
ypical
characteristics
(Ta=25
o
C, unless otherwise noted)
10V/div
10V/div
20ns/div
20ns/div
ESD Clamping
(+8kV contact discharge per IEC61000-4-2)
ESD Clamping
(-8kV contact discharge per IEC61000-4-2)
Will Semiconductor Ltd.
4
Revision 2.3, 2016/07/06
ESD9X7V
Package outline dimensions
FBP-02C
L
D
L2
L1
L3
D1
e1
e
Top View
Symbol
A
A1
A1
Bottom View
Dimensions In Millimeters
Min.
0.450
0.010
0.950
0.550
Typ.
0.500
--
1.000
0.600
0.470 Ref.
0.420 Ref.
0.270
0.250
0.555
0.250
0.370
0.320
0.300
0.605
0.230 Ref.
0.300
0.030 Ref.
0.420
0.040 Ref.
0.470
0.350
0.370
0.350
0.655
Max.
0.550
0.100
1.050
0.650
D
E
D1
E1
b
A
Side View
b1
e
e1
L
Recommend land pattern (Unit: mm)
L1
L2
L3
0.40
0.40
Notes:
This recommended land pattern is for reference
purposes only. Please consult your manufacturing
0.62
0.18
0.50
group to ensure your PCB design guidelines are met.
Will Semiconductor Ltd.
5
Revision 2.3, 2016/07/06
E1
b1
E
b
电子工程世界
综合技术交流
