ESDA6V1W5
ESDA6V1W5
4-Lines, Uni-directional, Transient Voltage Suppressors
http//:www.sh-willsemi.com
Descriptions
The ESDA6V1W5 array is 4-line ESD transient voltage
suppressor which provides a very high level of protection for
sensitive electronic components that may be subjected to
electrostatic discharge (ESD). These devices clamp the
voltage just above the logic level supply for positive transient
and to a diode drop below ground for negative transient.
The ESDA6V1W5 may be used to provide ESD protection up
to ±30kV (contact discharge) according to IEC61000-4-2,
and withstand peak pulse current up to 9A (8/20μs)
according to IEC61000-4-5.
The ESDA6V1W5 is available in SOT-353 package.
Standard products are Pb-free and Halogen-free.
SOT-353
1
2
3
5
4
Features
Reverse stand-off voltage: 5V max.
Transient pr6otection for each line according to
IEC61000-4-2 (ESD):
±30kV (contact discharge)
IEC61000-4-5 (surge): 9A (8/20μs)
Capacitance: C
J
= 55pF typ.
Low leakage current
Low clamping voltage
Solid-state silicon technology
1
I/O
I/O
5
Circuit diagram
I/O
4
*E
2
GND
3
I/O
Applications
Cell Phone Handsets and Accessories
Personal Digital Assistants
Notebooks, Desktops, and Servers
Portable Instrument
E
*
= Device code
= Date code
Marking & Pin configuration
Order information
Device
Package
Shipping
ESDA6V1W5-5/TR SOT-353 3000/Tape&Reel
Will Semiconductor Ltd.
1
Revision 3.3, 2016/03/28
ESDA6V1W5
Absolute maximum ratings
Parameter
Peak pulse power (t
p
= 8/20μs)
Peak pulse current (t
p
= 8/20μs)
ESD according to IEC61000-4-2 air discharge
ESD according to IEC61000-4-2 contact discharge
Junction temperature
Operation temperature
Lead temperature
Storage temperature
Symbol
P
pk
I
PP
V
ESD
T
J
T
OP
T
L
T
STG
Rating
117
9
±30
±30
125
-40~85
260
-55~150
Unit
W
A
kV
o
o
o
o
C
C
C
C
Electrical characteristics
(T
A
= 25
o
C, unless otherwise noted)
I
I
PP
V
F
I
F
V
FC
I
PP
Forward voltage
Forward current
Forward clamping voltage
Peak pulse current
V
RWM
Reverse stand-off voltage
I
R
V
BR
V
CL
I
PP
I
BR
I
R
V
RWM
V
BR
V
CL
I
F
Reverse leakage current
Reverse breakdown voltage
Clamping voltage
Peak pulse current
V
FC
V
F
V
I
PP
Definitions of electrical characteristics
Will Semiconductor Ltd.
2
Revision 3.3, 2016/03/28
ESDA6V1W5
Electrical characteristics
(T
A
= 25
o
C, unless otherwise noted)
Parameter
Reverse stand-off voltage
Reverse leakage current
Reverse breakdown voltage
Forward voltage
Clamping voltage
Clamping voltage
1)
2)
1)
Symbol
V
RWM
I
R
V
BR
V
F
V
CL
V
CL
R
DYN
V
RWM
= 5V
I
BR
= 1mA
I
F
= 10mA
Condition
Min.
Typ.
Max.
5.0
1
Unit
V
μA
V
V
V
V
Ω
6.2
0.4
7.2
0.8
11.0
11.0
0.25
8.2
1.25
I
PP
= 16A, t
p
= 100ns
V
ESD
= +8kV
Dynamic resistance
Clamping voltage
3)
I
PP
= 1A, t
p
= 8/20μs
V
CL
C
J
I
PP
= 9A, t
p
= 8/20μs
V
R
= 0V, f = 1MHz
55
9
13
65
V
V
pF
Junction capacitance
Notes:
1) TLP parameter: Z
0
= 50 Ω, t
p
= 100ns, t
r
= 2ns, averaging window from 60ns to 80ns. R
DYN
is calculated from 4A to
16A.
2) Contact discharge mode, according to IEC61000-4-2
3)
Non-repetitive current pulse, according to IEC61000-4-5.
Will Semiconductor Ltd.
3
Revision 3.3, 2016/03/28
ESDA6V1W5
Typical characteristics
(T
A
= 25
o
C, unless otherwise noted)
Peak pulse current (%)
100
90
Front time: T
1
= 1.25
T = 8μs
Time to half-value:
T
2
= 20μs
100
90
50
T
2
Current (%)
10
T
T
1
10
0
Time (μs)
20
30ns
t
r
= 0.7~1ns
60ns
t
Time (ns)
8/20μs waveform per IEC61000-4-5
Contact discharge current waveform per IEC61000-4-2
10.5
Junction capacitance (pF)
Pulse waveform: t
p
= 8/20μs
55
50
45
40
35
30
V
C
- Clamping voltage (V)
10.0
9.5
9.0
8.5
8.0
7.5
7.0
0
1
2
3
4
5
6
7
8
9
10
f = 1MHz
V
AC
= 50mV
25
0
1
2
3
4
5
I
PP
- Peak pulse current (A)
V
R
- Reverse voltage (V)
Clamping voltage vs. Peak pulse current
1000
Capacitance vs. Reverse voltage
100
Peak pulse power (W)
% of Rated power
80
60
40
20
0
100
10
1
10
100
Pulse time (μs)
1000
0
25
50
75
100
o
125
150
T
A
- Ambient temperature ( C)
Non-repetitive peak pulse power vs. Pulse time
Power derating vs. Ambient temperature
Will Semiconductor Ltd.
4
Revision 3.3, 2016/03/28
ESDA6V1W5
Typical characteristics
(T
A
= 25
o
C, unless otherwise noted)
10V/div
10V/div
20ns/div
20ns/div
ESD clamping
(+8kV contact discharge per IEC61000-4-2)
ESD clamping
(-8kV contact discharge per IEC61000-4-2)
22
20
18
16
14
12
10
8
6
4
2
0
-2
Z
0
= 50
t
r
= 2ns
t
p
= 100ns
TLP current (A)
0
1
2
3
4
5
6
7
8
9
10 11 12
TLP voltage (V)
TLP Measurement
Will Semiconductor Ltd.
5
Revision 3.3, 2016/03/28
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