JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
FCX591
FEATURES
Power dissipation
MARKING:P1
TRANSISTOR (PNP)
SOT-89-3L
1. BASE
2. COLLECTOR
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-80
-60
-5
-1
0.5
150
-65~150
Unit
V
V
V
A
W
℃
3. EMITTER
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector- Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
*
V
(BR)EBO
I
CBO
I
EBO
I
CES
Test conditions
I
C
=-100μA , I
E
=0
I
C
= -10mA , I
B
=0
I
E
=-100μA, I
C
=0
V
CB
=-60 V , I
E
=0
V
EB
=-4 V , I
C
=0
V
CES
=-60 V, I
E
=0
V
CE
=-5V,
V
CE
=-5V,
V
CE
=-5V,
V
CE
=-5V,
I
C
= -1mA
I
C
= -500mA
I
C
= -1A
I
C
= -2A
100
100
80
15
Min
-80
-60
-5
-0.1
-0.1
-0.1
300
Max
Unit
V
V
V
μA
μA
μA
DC current gain
h
FE
*
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
V
CE(sat)
*
V
BE(sat)
*
V
BE
*
f
T
C
ob
I
C
=-500 mA, I
B
= -50mA
I
C
=-1A, I
B
= -100mA
I
C
=-1A, I
B
= -100mA
V
CE
=-5V, I
C
= -1A
V
CE
= -10V, I
C
=- 50mA
f =100MHz
V
CB
=-10V, f=1MHz
150
-0.3
-0.6
-1.2
-1
V
V
V
MHz
10
pF
*Pulse width=300s. Duty cycle 2%
A,Jun,2011
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