GOFORD
Description
The G16P03 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge . This device is suitable for
use as a load switch or in PWM applications.
G16P03
General Features
VDSS
-30V
RDS(ON)
@-10V (typ)
10.6 m
Ω
RDS(ON)
@-4.5V (typ)
16.3 m
Ω
ID
Schematic diagram
-16A
●
High Power and current handing capability
●
Lead free product is acquired
●
Surface mount package
Application
●
PWM applications
●
Load switch
●
Power management
Marking and pin assignment
G16P0
3
DFN3X3-8L
Absolute Maximum Ratings (T
A
=25℃unless otherwise noted)
℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(T
C
=100℃)
Drain
Current-Pulsed
(Note 1)
Symbol
V
DS
V
GS
I
D
I
D
(100℃)
Limit
-30
±20
-16
-21.2
-80
35
-55 To 150
Unit
V
V
A
A
A
W
℃
I
DM
P
D
T
J
,T
STG
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Thermal Characteristic
Thermal Resistance,Junction-to-Case
(Note 2)
R
θJC
3.57
℃/W
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX：0755-29961466
Page 1
GOFORD
Electrical Characteristics (T
A
=25℃unless otherwise noted)
Mi
n
-30
-
-
G16P03
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics
(Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
(Note4)
Symbol
BV
DSS
I
DSS
I
GSS
Condition
V
GS
=0V I
D
=-250µA
V
DS
=-30V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
Typ
-33
-
-
Max
-
-1
±100
Unit
V
µA
nA
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=-250µA
V
GS
=-10V, I
D
=-15A
V
GS
=-4.5V, I
D
=-15A
V
DS
=-5V,I
D
=-15A
-1
-
-
15
-1.5
10.6
16.3
-
-1.9
15
25
-
V
m
m
S
C
lss
C
oss
C
rss
V
DS
=-25V,V
GS
=0V,
F=1.0MHz
-
-
-
2130
302
227
-
-
-
PF
PF
PF
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=-15V,I
D
=-20A,V
GS
=-10V
V
DD
=-15V, ID=-15A,
V
GS
=-10V,R
GEN
=1
-
-
-
-
-
-
-
12
10
25
13
45.6
4.6
11.1
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
V
SD
V
GS
=0V,I
S
=-30A
-
-
-1.2
V
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX：0755-29961466
Page 2
GOFORD
Typical Electrical and Thermal Characteristics
t
on
t
r
90%
G16P03
t
d(on)
t
d(off)
t
off
t
f
90%
V
OUT
10%
INVERTED
10%
90%
V
IN
10%
50%
50%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
T
J
-Junction Temperature(℃)
I
D
- Drain Current (A
）
P
D
Power(W)
T
J
-Junction Temperature(℃)
Figure 3 Power Dissipation
Figure 4 Drain Current
Vds Drain-Source Voltage (V)
Rdson On-Resistance(m
Ω
)
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Figure 5 Output Characteristics
Figure 6 Drain-Source On-Resistance
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TEL：0755-29961262
FAX：0755-29961466
Page 3
GOFORD
Normalized On-Resistance
G16P03
I
D
- Drain Current (A)
Vgs Gate-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 7 Transfer Characteristics
Rdson On-Resistance(mΩ)
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
C Capacitance (pF)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
I
s
- Reverse Drain Current (A)
Figure 10 Capacitance vs Vds
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX：0755-29961466
Page 4
GOFORD
G16P03
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
r(t),Normalized Effective
Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX：0755-29961466
Page 5
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