GOFORD
DESCRIPTION
The
80N03
uses
advanced
trench
technology
And
design provide
to
excellent (ON ith
RDS )
w
Low charge be
gate
It . used a
can
inwide
Vanety applications
of
.
80N03
V
DS
80A
--
30V
R
DS(ON)
I
D
GENERAL
FEATURES
½
V
DS
= V,
30 I
D
= A
80
= V
10
TO-252-2L top view
R
DS(ON)
<mΩ V
GS
6 @
½
½
½
½
½
High
density design ultra Rdson
cell
for low
Fully
characterized
Avalanche
voltage current
and
Good
stabilty unifomity high
AS
and
with E
Excellent ackage good dissipation
p
for
heat
Special rocess
p
technology high
for ESD
capability
Application
½
½
½
Power witching
s
application
Hard
Switched High
and Frequency
Circuits
Ordering
Information
PART
NUMBER BRAND
PACKAGE
TO-252-2L
80N03
OGFD
Uninterruptible
Power upply
S
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TEL：0755-29961099
FAX
：0755-29961466
Page 1
GOFORD
Absolute
Maximum
Ratings
(TC=25
Symbol
V
DS
I
D
I
DM
P
D
V
GS
E
AS
T
J
and
T
STG
80N03
℃,
nless
u
otherwise
noted)
80N03
30
80
50
170
0
±
20
150
6
W
V
mJ
℃
A
Units
V
Parameter
Drain-to-Source
Voltage
Continuous
Drain
Current
Drain
Current-Continuous(Tc=100
℃)
Pulsed
Drain
Current
Power issipation
D
Gate-to-Source
Voltage
Single
PulseAvalanche
Energy
Operating
Junction Storage
and
Temperature 175
-55
Range
to
Thermal esistance
R
Parameter
Symbol
R
θJC
Junction-to-Case
-- --
Min. Units Conditions
Typ. Test
Max.
2
.
5
℃/W
Water ooled
c
heatsink, D
P adjusted
for
a
peak
junction
temperature +175
of
℃.
OFF
Characteristics
TJ=25℃
Parameter
Symbol
B
VDSS
I
GSS
I
DSS
unless
otherwise
specified
Min. Test onditions
Typ.
Max. C
Units
Drain-to-Source
Breakdown
V
GS
V
Voltage
--
-- 30
=0,
I
D
=250µA
Gate-to-Source V
DS
-- Leakage
Forward --
±100
nA
ZeroV
DS
Voltage -- Current
Gate 1
µA
Drain --
=0V,
GS
=±20V
V
=30V,
V
GS
=0V
ON
Characteristics
TJ=25
℃
unless
otherwise
specified
Symbol
Parameter
R
DS(ON)
V
GS(TH)
G
fs
Static
Drain-to-Source
On-Resistance
Gate
Threshold V V 3.0 1.0
Voltage, 1.5 12.
Figure
Forward
Transconductance S
V
--
--- 20
Max Conditions
Typ.
Min.
Units
Test
mΩ 4.8 --
V6.0
GS
=10V,I
D
=30A
DS
=
GS
,
D
=250µA
V
I
DS
=10V,
D
=24A
I
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TEL：0755-29961099
FAX
：0755-29961466
Page 2
GOFORD
Dynamic
Characteristics
Essentially
independent f perating
oo
temperature
Parameter
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Input apacitance
C
Output apacitance
C
Reverse
Transfer--apacitance
C230--
Total ate
G Charge
Gate-to-Source
Charge
Gate-to-Drain -- 11 -- harge
(“Miller”)
C
-- 51 --
-- 14 --
nC
Min. Conditions
Typ.Units
Test
Max.
2330
-- --
-- --
460
VpF
DS
80N03
=15V,V
GS
=0V,=1.0MHZ
f
V
DS
=10V,
GS
=10V,
V
I
D
=30A
Drain-Source
Diode
Characteristics
Diode
Forward
Voltage
Diode
Forward
Current
Reverse
Recovery
Time
Reverse
Recovery
Q Charge
Forword
Turn-On
Time
V
SD
I
S
t
rr
rr
V
GS
=0V,I
S
=24A V 1.2 --
--
A 80
--
--
--
--
--
TJ=25℃,IF=80A nS 50 32
Di/dt 100
= A/µs
nC20 12
t
on
Intrinsic
turn-on is
time negligible
(turn-on dominated LS+LD
is
by
Notes:
Repetitive
1.
Rating:Pulse
width
limited maximum
by
junction
temperature.
Surface
2.
Mounted FR4
on Board,
t
Pulse
3. Test:Pulse
Width
≤10
sec.
≤
300µs, uty
D Cycle
≤
2%.
Guaranteed design, ot ubjecto
4.
by
n s
t production.
EAS
5. condition: j=25
T
℃,VDD=15V,VG=10V,L=1mH,Rg=25Ω.
www.goford.cn
TEL：0755-29961099
FAX
：0755-29961466
Page 3
GOFORD
Test circuit
1）E
AS
test Circuits
80N03
2）Gate charge test Circuit:
3）Switch Time Test Circuit：
www.goford.cn
TEL：0755-29961099
FAX
：0755-29961466
Page 4
GOFORD
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves)
80N03
Normalized On-Resistance
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 1 Output Characteristics
Figure 4 Rdson-JunctionTemperature
Vgs Gate-Source Voltage (V)
Vgs Gate-Source Voltage (V)
I
D
- Drain Current (A)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Rdson On-Resistance Normalized
Figure 5 Gate Charge
I
D
- Drain Current (A)
I
s
- Reverse Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson-
Drain Current
Figure 6 Source- Drain Diode Forward
www.goford.cn
TEL：0755-29961099
FAX
：0755-29961466
Page 5
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