首页 > 器件类别 > 分立半导体 > 整流桥

GBU606

反向峰值电压:600V 平均整流电流(Io):6A 正向压降(Vf):1V @ 3A

器件类别:分立半导体    整流桥   

厂商名称:深圳辰达行电子(MDD)

厂商官网:http://www.microdiode.com/

下载文档
GBU606 在线购买

供应商:

器件:GBU606

价格:-

最低购买:-

库存:点击查看

点击购买

器件参数
参数名称
属性值
反向峰值电压
600V
平均整流电流(Io)
6A
正向压降(Vf)
1V @ 3A
文档预览
GBU6005 THRU GBU610
GLASS PASSIVATED BRIDGE RECTIFIERS
Reverse Voltage - 50 to 1000 Volts
Forward Current - 6.0 Amperes
GBU
.437(11.1)
.430(10.9)
.874(22.2)
.860(21.8)
.154(3.9)
.146(3.7)
.232(5.9)
.224(5.7)
.401(10.2)
.392(9.80)
.126(3.2)*45°
CHAMFER
FEATURES
.139(3.53)
.133(3.37)
Surge overload rating -175 amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing
molded plastic technique
Plastic material has U/L
lammability classification 94V-0
Mounting postition:Any
.752(19.1)
.720(18.3)
.073(1.85)
.057(1.45)
.720(18.29)
.680(17.27)
.047(1.2)
.035(0.9)
.100(2.54)
.085(2.16)
.080(2.03)
.065(1.65)
.106(2.7)
.091(2.3)
.210 .210
.190 .190
(5.3) (5.3)
(4.8) (4.8)
.210
.190
(5.3)
(4.8)
.022(.56)
.018(.46)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward(with heatsink NOTE 2)
Rectified current @ T
c
=100 C(without heatsink)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Rating for Fusing(t<8.3ms)
Maximum forward voltage at 3.0A DC
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=125 C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating junction temperature range
storage temperature range
SYMBOLS
GBU
6005
GBU
601
GBU
602
GBU
604
GBU
606
GBU
608
GBU
610
UNITS
VOLTS
VOLTS
VOLTS
Amps
Amps
A
2
s
Volts
µ
A
µ
A
pF
C/W
C
C
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
400
280
400
6.0
2.8
175.0
127
1.1
600
420
600
800
560
800
1000
700
1000
I
FSM
I
2
t
V
F
I
R
C
J
R
θ
JA
T
J
T
STG
10
500
50
2.2
-55 to +150
-55 to +150
NOTES:
1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Device mounted on 75mm*75mm*1.6mm cu plate heatsink.
RATINGS AND CHARACTERISTIC CURVES GBU6005 THRU GBU610
FIG.1-FORWARD CURRENT DERATING CURVE
FIG.2-MAXIMUM NON-REPETITIVE SURGE CURRENT
180
WITH HEATSINK
AVERAGE FORWARD CURRENT
AMPERES
6.0
PEAK FORWARD SURGE CURRENT,
AMPERES
5.0
4.0
WITHOUT
160
PULSE WIDTH 8.3ms
SINGLE HALF-SINE-WAVE
(JEDEC METHOD)
120
3.0
2.0
1.0
0.00
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
80
40
0.1
0
20
40
60
80
100
120
140
0
0
2
5
10
20
50
100
NUMBER OF CYCLETS AT 60Hz
CASE TEMPERATURE,
°C
FIG.3-TYPICAL JUNCTION CAPACITANCE
100
100
FIG.4-TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT,
(A)
CAPACITANCE,(pF)
10
10
1.0
T
J
= 25°C
PULSE WIDTH 300us
T
J
=25°C,f=1MH
Z
1.0
1.0
10.0
REVERSE VOLTAGE,VOLTS
100
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.5-TYPICAL REVERSE CHARACTERISTICS
1000
INSTANTANEOUS REVERSE CURRENT ,(uA)
T
J
=125°C
100
T
J
=100°C
10
T
J
=50°C
1.0
T
J
=25°C
0.1
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
The cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)!
查看更多>