首页 > 器件类别 > 存储 > FLASH存储器

GD25Q40CTIG

存储器构架(格式):FLASH 存储器接口类型:SPI - Dual/Quad I/O 存储器容量:4Mb (512K x 8) 存储器类型:Non-Volatile 4-Mbit(512K x8bit),SPI,Dual SPI,Quad SPI,120MHz,电压:2.7V to 3.6V

器件类别:存储    FLASH存储器   

厂商名称:兆易创新(GigaDevice)

厂商官网:http://www.gigadevice.com

下载文档
GD25Q40CTIG 在线购买

供应商:

器件:GD25Q40CTIG

价格:-

最低购买:-

库存:点击查看

点击购买

器件参数
参数名称
属性值
存储器构架(格式)
FLASH
存储器接口类型
SPI - Dual/Quad I/O
存储器容量
4Mb (512K x 8)
工作电压
2.7V ~ 3.6V
存储器类型
Non-Volatile
文档预览
3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q40C
GD25Q40C
DATASHEET
1
3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q40C
Contents
1.
2.
3.
4.
5.
6.
7.
FEATURES
................................................................................................................................................................ 4
GENERAL DESCRIPTION
...................................................................................................................................... 5
MEMORY ORGANIZATION
.................................................................................................................................... 7
DEVICE OPERATION
.............................................................................................................................................. 8
DATA PROTECTION
................................................................................................................................................ 9
STATUS REGISTER
............................................................................................................................................... 11
COMMANDS DESCRIPTION
............................................................................................................................... 13
7.1.
7.2.
7.3.
7.4.
7.5.
7.6.
7.7.
7.8.
7.9.
7.10.
7.11.
7.12.
7.13.
7.14.
7.15.
7.16.
7.17.
7.18.
7.19.
7.20.
7.21.
7.22.
7.23.
7.24.
7.25.
7.26.
7.27.
7.28.
7.29.
7.30.
7.31.
7.32.
W
RITE
E
NABLE
(WREN) (06H) ......................................................................................................................... 16
W
RITE
D
ISABLE
(WRDI) (04H) ......................................................................................................................... 16
R
EAD
S
TATUS
R
EGISTER
(RDSR) (05H
OR
35H) ................................................................................................ 16
W
RITE
S
TATUS
R
EGISTER
(WRSR) (01H) .......................................................................................................... 17
W
RITE
E
NABLE FOR
V
OLATILE
S
TATUS
R
EGISTER
(50H) ................................................................................... 17
R
EAD
D
ATA
B
YTES
(READ) (03H)..................................................................................................................... 18
R
EAD
D
ATA
B
YTES AT
H
IGHER
S
PEED
(F
AST
R
EAD
) (0BH) ................................................................................ 18
D
UAL
O
UTPUT
F
AST
R
EAD
(3BH) ...................................................................................................................... 19
Q
UAD
O
UTPUT
F
AST
R
EAD
(6BH) ...................................................................................................................... 19
D
UAL
I/O F
AST
R
EAD
(BBH) ............................................................................................................................. 20
Q
UAD
I/O F
AST
R
EAD
(EBH) ............................................................................................................................. 22
Q
UAD
I/O W
ORD
F
AST
R
EAD
(E7H) ................................................................................................................... 23
S
ET
B
URST WITH
W
RAP
(77H)............................................................................................................................ 24
P
AGE
P
ROGRAM
(PP) (02H)................................................................................................................................ 24
Q
UAD
P
AGE
P
ROGRAM
(32H) ............................................................................................................................. 25
S
ECTOR
E
RASE
(SE) (20H) ................................................................................................................................. 26
32KB B
LOCK
E
RASE
(BE) (52H) ....................................................................................................................... 27
64KB B
LOCK
E
RASE
(BE) (D8H) ...................................................................................................................... 27
C
HIP
E
RASE
(CE) (60/C7H)................................................................................................................................ 28
D
EEP
P
OWER
-D
OWN
(DP) (B9H) ....................................................................................................................... 28
R
ELEASE FROM
D
EEP
P
OWER
-D
OWN OR
H
IGH
P
ERFORMANCE
M
ODE AND
R
EAD
D
EVICE
ID (RDI) (ABH) ...... 29
R
EAD
M
ANUFACTURE
ID/ D
EVICE
ID (REMS) (90H) ........................................................................................ 30
R
EAD
I
DENTIFICATION
(RDID) (9FH) ................................................................................................................ 31
H
IGH
P
ERFORMANCE
M
ODE
(HPM) (A3H) ........................................................................................................ 31
C
ONTINUOUS
R
EAD
M
ODE
R
ESET
(CRMR) (FFH) ............................................................................................ 32
P
ROGRAM
/E
RASE
S
USPEND
(PES) (75H) ........................................................................................................... 33
P
ROGRAM
/E
RASE
R
ESUME
(PER) (7AH) ........................................................................................................... 33
E
RASE
S
ECURITY
R
EGISTERS
(44H) ................................................................................................................... 34
P
ROGRAM
S
ECURITY
R
EGISTERS
(42H) .............................................................................................................. 34
R
EAD
S
ECURITY
R
EGISTERS
(48H) ..................................................................................................................... 35
E
NABLE
R
ESET
(66H)
AND
R
ESET
(99H) ............................................................................................................ 36
R
EAD
S
ERIAL
F
LASH
D
ISCOVERABLE
P
ARAMETER
(5AH).................................................................................. 36
2
3.3V Uniform Sector
Dual and Quad Serial Flash
8.
8.1.
8.2.
8.3.
8.4.
8.5.
8.6.
9.
GD25Q40C
ELECTRICAL CHARACTERISTICS
................................................................................................................... 41
POWER-ON TIMING ....................................................................................................................................... 41
INITIAL DELIVERY STATE ............................................................................................................................ 41
ABSOLUTE MAXIMUM RATINGS ............................................................................................................... 41
CAPACITANCE MEASUREMENT CONDITIONS ........................................................................................ 42
DC CHARACTERISTICS................................................................................................................................. 43
AC CHARACTERISTICS................................................................................................................................. 44
ORDERING INFORMATION
................................................................................................................................. 47
9.1.
V
ALID
P
ART
N
UMBERS
........................................................................................................................................ 48
PACKAGE INFORMATION
............................................................................................................................... 49
P
ACKAGE
SOP8 150MIL .................................................................................................................................... 49
P
ACKAGE
SOP8 208MIL .................................................................................................................................... 50
P
ACKAGE
DIP8 300MIL ..................................................................................................................................... 51
P
ACKAGE
USON8 (3*2
MM
,
THICKNESS
0.45
MM
) ............................................................................................... 52
P
ACKAGE
USON8 (3*4
MM
) ............................................................................................................................... 53
P
ACKAGE
TSSOP8 173MIL ............................................................................................................................... 54
REVISION HISTORY
.......................................................................................................................................... 55
10.
10.1.
10.2.
10.3.
10.4.
10.5.
10.6.
11.
3
3.3V Uniform Sector
Dual and Quad Serial Flash
1. FEATURES
4M-bit Serial Flash
-512K-byte
-256 bytes per programmable page
Standard, Dual, Quad SPI
-Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD#
-Dual SPI: SCLK, CS#, IO0, IO1, WP#, HOLD#
-Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3
High Speed Clock Frequency
-120MHz for fast read with 30PF load
-Dual I/O Data transfer up to 240Mbits/s
-Quad I/O Data transfer up to 480Mbits/s
Software/Hardware Write Protection
-Write protect all/portion of memory via software
-Enable/Disable protection with WP# Pin
-Top/Bottom Block protection
Minimum 100,000 Program/Erase Cycles
Data retention
-20-year data retention typical
Low Power Consumption
-20mA maximum active current
Flexible Architecture
-Uniform Sector of 4K-byte
-Uniform Block of 32/64k-byte
Fast Program/Erase Speed
GD25Q40C
-Page Program time: 0.6ms typical
-Sector Erase time: 45ms typical
-Block Erase time: 0.15/0.25s typical
-Chip Erase time: 2s typical
-5uA maximum power down current
Advanced Security Features
(1)
-128-Bit Unique ID for each device
-4*256-Byte Security Registers With OTP Locks
-Discoverable parameters(SFDP) register
Single Power Supply Voltage
-Full voltage range:2.7~3.6V
◆Allows
XIP(execute in place)operation(1)
-Continuous Read With 8/16/32/64-byte Wrap
Note: 1.Please contact GigaDevice for details.
4
3.3V Uniform Sector
Dual and Quad Serial Flash
2. GENERAL DESCRIPTION
GD25Q40C
The GD25Q40C (4M-bit) Serial flash supports the standard Serial Peripheral Interface (SPI), and supports the
Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (WP#), and I/O3 (HOLD#). The Dual I/O
data is transferred with speed of 240Mbits/s and the Quad I/O & Quad output data is transferred with speed of 480Mbits/s.
CONNECTION DIAGRAM
CS#
SO/
IO1
WP#/
IO2
VSS
1
2
Top View
3
4
6
5
8
7
VCC
HOLD#/
IO3
SCLK
SI/
IO0
CS#
SO/
IO1
WP#/
IO2
VSS
1
2
Top View
3
4
8–LEAD WSON/USON
6
5
8
7
VCC
HOLD#/
IO3
SCLK
SI/
IO0
8–LEAD VSOP/SOP
PIN DESCRIPTION
Pin Name
CS#
SO (IO1)
WP# (IO2)
VSS
SI (IO0)
SCLK
HOLD# (IO3)
VCC
I/O
I
I/O
I/O
I
I/O
I/O
Description
Chip Select Input
Data Output (Data Input Output 1)
Write Protect Input (Data Input Output 2)
Ground
Data Input (Data Input Output 0)
Serial Clock Input
Hold Input (Data Input Output 3)
Power Supply
Note: CS# must be driven high if chip is not selected. Please don’t leave CS# floating any time after power is on.
5
查看更多>
绝缘胶带
电气胶带的构造从一卷3M#1350粘贴胶带的外表,会令人联想到它所牵涉的物料科学、技术和先进生产处理等复杂性质.电气胶带的基本结构:分离涂层(ReleaseCoating)、带基/基材(Backing)、涂底剂(PrimerCoating)、粘剂(Adhesive).以带基/基材的不同分类有:环氧胶带(epoxytape)、聚酸亚胺胶带(polyimidetape)、聚四氟乙烯胶带(PTFETa...
czf0408 LED专区
引脚
哪位大神指教下XFILT、YFILT是什么意思?引脚...
zhy1989 传感器
TIM1_CH1做输出比较怎么配置
TIM1_CH1做输出比较怎么配置?怎么用V3.2.0中OCToggle直接修改的例程不行呢?TIM2_CH1修改的就可以?TIM1_CH1做输出比较怎么配置补充:中断用的TIM1_CC_IRQn版主没看到吗?自己顶我早看到了,信息太少,等你不断地补充信息。信息还少吗?就这些信息还不嫩反应问题吗?怎么知道你是不是改对了?完全按照例程里面的改,怎么会错?不用TIM1_CH1用TIM2_C...
GGRR stm32/stm8
电流最大为350mA,电源和地线宽度为10mil可以吗?
网上查询推荐电源线和地线宽度比我的10mil大得多,但是我的最大电流也就350mA,这样可以吗?电流最大为350mA,电源和地线宽度为10mil可以吗?仅仅是这个电流够了可以,但考虑到导线内阻的影响,最好加粗,这是一般原则。铜厚多少?2盎司就够了,1盎司就小了。1盎司我尽量是按1A/mm来...
面纱如雾 PCB设计
手机闪光灯为电源管理带来新的需求
照相等功能在手机中的出现和不断深入,对电源管理提出了更严峻的挑战,因为这些新增功能基本上都属于“能量饥渴型”应用。例如,消费者希望照相手机能拍摄更高分辨率的图片,并能在室内或昏暗环境光条件下进行拍摄。这些需求迫使手机设计师开始考虑在手机中配置闪光功能,而白光LED成为闪光灯的首选光源。对手机设计工程师而言,白光LED拥有他们所需要的各种特性:小外形尺寸、高亮度输出以及提供闪光和连续视频照明的能力,LED供应商已开发出专门用于手机闪光灯的高输出功率LED。然而,这些高亮度的LED...
zbz0529 电源技术
《RISC-V开放架构设计之道》-RV32CV+特权架构+可扩展选项
#RV32V向量!(/data/attachment/forum/202411/05/005002gt10xo2krdcu0psy.jpg.thumb.jpg?rand=5372.011770651946)向量操作主要用于数据级并行,最著名的数据级并行架构是SIMD,她将64位寄存器划分成了多个8位,16位或32位的片段,然后并行的计算他们,但是RISC-V使用向量架构进行实现前面章节提到的每一条整数和浮点计算都有对应的向量版本RV32V添加了32个名称以V开头的向量寄存器,但是...
rtyu789 编程基础