DATA SHEET
GMZJ2.0~GMZJ56
SURFACE MOUNT ZENER DIODES
VOLTAGE
2.0 to 56 Volts
POWER
500 mWatts
MICRO-MELF
Unit : inch (mm)
FEATURES
• Planar Die construction
• 500mW Power Dissipation
• Ideally Suited for Automated Assembly Processes
• Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb
Pb free: 98.5% Sn above
.043(1.1)
.008(0.2)
.008(0.2)
.049(1.25)
.047(1.2)DIA.
MECHANICAL DATA
• Case: Molded Glass MICRO-MELF
• Terminals: Solderable per MIL-STD-202E, Method 208
• Polarity: See Diagram Below
• Approx. Weight: 0.01 grams
• Mounting Position: Any
• Packing information
T/R - 2.5K per 7" plastic Reel
.079(2.0)
.071(1.8)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Parameter
Power Dissipation at Tamb = 25
Junction Temperature
Storage Temperature Range
Valid provided that leads at a distance of 10mm from case are kept at ambient temperature.
O
Symbol
Value
500
175
-65 to +175
Units
mW
O
C
P
TOT
T
J
T
S
C
C
O
Parameter
Thermal Resi stance Juncti on to Ambi ent Ai r
Forward Voltage at IF = 100mA
Symbol
Mi n.
--
--
Typ.
Max.
0.3
1
Uni ts
K/mW
V
RthA
VF
--
--
Vali d provi ded that leads at a di stance of 10mm from case are kept at ambi ent temperature.
STAD-SEP.14.2004
PAGE . 1
Part Number
GMZJ 2.0
GMZJ 2.2
GMZJ 2.4
GMZJ 2.7
GMZJ 3.0
GMZJ 3.3
GMZJ 3.6
GMZJ 3.9
C LA S S
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
C
A
V
Z
@ I
ZT
M i n. V
1.88
2.02
2.12
2.22
2.33
2.43
2.54
2.69
2.85
3.01
3.16
3.32
3.455
3.60
3.74
3.89
4.04
4.17
4.30
4.44
4.55
4.68
4.81
4.94
5.09
5.28
5.45
5.61
5.78
5.96
6.12
6.29
6.49
6.66
6.85
7.07
7.29
7.53
7.78
8.03
8.29
8.57
8.83
9.12
9.41
9.70
9.94
10.18
10.50
10.82
M a x. V
2.10
2.20
2.30
2.41
2.52
2.63
2.75
2.91
3.07
3.22
3.38
3.53
3.695
3.845
4.01
4.16
4.29
4.43
4.57
4.68
4.80
4.93
5.07
5.20
5.37
5.55
5.73
5.91
6.09
6.27
6.44
6.63
6.83
7.01
7.22
7.45
7.67
7.92
8.19
8.45
8.73
9.01
9.30
9.59
9.90
10.20
10.44
10.71
11.05
11.38
IZ
(m A )
5
5
5
5
5
5
5
5
VR
(V )
0.5
0.7
1.0
1.0
1.0
1.0
1.0
1.0
IR ( u A )
MA X
120
100
120
100
50
20
10
5
Iz t
(mA )
5
5
5
5
5
5
5
5
Z
ZT
(Ω )
MA X
100
100
100
110
120
120
100
100
I
ZK
(m A)
0.5
0.5
0.5
0.5
0.5
0.5
1
1
Z
ZK
(Ω )
MA X
1000
1000
1000
1000
1000
1000
1000
1000
GMZJ 4.3
5
1.0
5
5
100
1
1000
GMZJ 4.7
B
C
A
5
1.0
5
5
90
1
900
GMZJ 5.1
B
C
A
5
1.5
5
5
80
1
800
GMZJ 5.6
B
C
A
5
2.5
5
5
60
1
500
GMZJ 6.2
B
C
A
5
3.0
5
5
60
1
300
GMZJ 6.8
B
C
A
5
3.5
2
5
20
0.5
150
GMZJ 7.5
B
C
A
5
4.0
0.5
5
20
0.5
120
GMZJ 8.2
B
C
A
5
5.0
0.5
5
20
0.5
120
GMZJ 9.1
B
C
A
B
C
D
A
5
6.0
0.5
5
25
0.5
120
GMZJ 10
5
7.0
0.2
5
30
0.5
120
GMZJ 11
B
C
5
8.0
0.2
5
30
0.5
120
STAD-SEP.14.2004
PAGE . 2
Part Number
C LA S S
A
V
Z
@ I
ZT
M i n. V
11.13
11.44
11.74
12.11
12.55
12.99
13.44
13.89
14.35
14.80
15.25
15.69
16.22
16.82
17.42
18.02
18.63
19.23
19.72
20.15
20.64
21.08
21.52
22.05
22.61
23.12
23.63
24.26
24.97
25.63
26.29
26.99
27.70
28.36
29.02
29.68
30.32
30.90
31.49
32.14
32.79
33.40
34.01
34.68
35.36
36.00
36.63
40.00
44.00
48.00
53.00
M a x. V
11.71
12.03
12.35
12.75
13.21
13.66
14.13
14.62
15.09
15.57
16.04
16.51
17.06
17.70
18.33
18.96
19.59
20.22
20.72
21.20
21.71
22.17
22.63
23.18
23.77
24.31
24.85
25.52
26.26
26.95
27.64
28.39
29.13
29.82
30.51
31.22
31.88
32.50
33.11
33.79
34.49
35.13
35.77
36.47
37.19
37.85
38.52
45.00
49.00
54.00
60.00
IZ
(m A )
5
VR
(V )
9.0
IR ( u A )
MA X
0.2
Iz t
(mA )
5
Z
ZT
(Ω )
MA X
30
I
ZK
(m A)
0.5
Z
ZK
(Ω)
MA X
110
GMZJ 12
B
C
A
GMZJ 13
B
C
A
5
10
0.2
5
35
0.5
110
GMZJ 15
B
C
A
5
11
0.2
5
40
0.5
110
GMZJ 16
B
C
A
5
12
0.2
5
40
0.5
150
GMZJ 18
B
C
A
B
C
D
A
B
C
D
A
B
C
D
A
B
C
D
A
B
C
D
A
B
C
D
A
B
C
D
A
B
C
D
5
13
0.2
5
45
0.5
150
GMZJ 20
5
15
0.2
5
55
0.5
200
GMZJ 22
5
17
0.2
5
30
0.5
200
GMZJ 24
5
19
0.2
5
35
0.5
200
GMZJ 27
5
21
0.2
5
45
0.5
250
GMZJ 30
5
23
0.2
5
55
0.5
250
GMZJ 33
5
25
0.2
5
65
0.5
250
GMZJ 36
5
27
0.2
5
75
0.5
250
GMZJ 39
5
30
0.2
5
85
0.5
250
GMZJ 43
GMZJ 47
GMZJ 51
GMZJ 56
5
5
5
5
33
36
39
43
0.2
0.2
0.2
0.2
5
5
5
5
90
90
110
110
--
--
--
--
--
--
--
--
STAD-SEP.14.2004
PAGE . 3
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
R
thJA
–Therm.Resist.Junction/ Ambient ( K/W)
500
V
Ztn
– Relative
VoltageChange
1.3
V
Ztn
=V
Zt
/V
Z
(25°C)
400
1.2
1.1
1.0
0.9
0.8
–60
TK
VZ
=10 x 10
–4
/K
300
l
l
8 x 10
–4
/K
6 x 10
–4
/K
4 x 10
–4
/K
2 x 10
–4
/K
0
–2 x 10
–4
/K
–4 x 10
–4
/K
200
100
T
L
=constant
0
0
5
10
15
20
l – Lead Length ( mm )
0
60
120
180
240
95 961
1
95 9599
T
j
– Junction Temperature (°C )
Fig. 1 Thermal Resistance vs. Lead Length
Fig. 4 Typical Change of Working Voltage vs. Junction
Temperature
TK
VZ
–Temperature Coefficient of V
Z
( 10
–4
/K)
P –Total Power Dissipation ( mW)
tot
600
500
400
300
15
10
5
I
Z
=5mA
200
100
0
0
–5
0
10
20
30
40
0
40
80
120
160
200
50
95 9602
T
amb
– Ambient T
emperature(°C )
95 9600
V
Z
– Z-Voltage ( V )
Fig. 2 Total Power Dissipation vs. Ambient Temperature
Fig. 5 Temperature Coefficient of Vz vs. Z-Voltage
1000
C
D
– Diode Capacitance ( pF )
200
V
Z
–VoltageChange mV )
(
T
j
=25°C
100
150
V
R
=2V
T
j
=25°C
100
I
Z
=5mA
10
50
1
0
95 9598
0
5
10
15
20
25
95 9601
0
5
10
15
20
25
V
Z
– Z-Voltage ( V )
V
Z
– Z-Voltage ( V )
Fig. 3 Typical Change of Working Voltage under Operating
Conditions at T
amb
=25°C
Fig. 6 Diode Capacitance vs. Z-Voltage
STAD-SEP.14.2004
PAGE . 4
100
I
F
– Forward Current ( mA)
50
40
30
20
10
0
P
tot
=500mW
T
amb
=25°C
T
j
=25°C
1
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
I
Z
– Z-Current ( mA)
10
15
95 9607
20
25
30
35
95 9605
V
F
– Forward Voltage ( V )
V
Z
– Z-Voltage ( V )
Fig. 7 Forward Current vs. Forward Voltage
Fig. 9 Z-Current vs. Z-Voltage
I
Z
– Z-Current ( mA)
80
60
40
20
0
0
4
8
12
r
Z
– Differential Z-Resistance (
Ω
)
100
1000
P
tot
=500mW
T
amb
=25°C
I
Z
=1mA
100
5mA
10
10mA
1
T
j
=25°C
0
5
10
15
20
25
V
Z
– Z-Voltage ( V )
16
20
95 9606
95 9604
V
Z
– Z-Voltage ( V )
Fig. 8 Z-Current vs. Z-Voltage
Z
thp
–ThermalResistance PulseCond.(K/W)
for
Fig. 10 Differential Z-Resistance vs. Z-Voltage
1000
t
p
/T=0.5
100
t
p
/T=0.2
Single Pulse
10
t
p
/T=0.1
R
thJA
=300K/W
T=T
jmax
–T
amb
t
p
/T=0.01
t
p
/T=0.02
t
p
/T=0.05
i
ZM
=(–V
Z
+(V
Z2
+4r
zj
x
T/Z
thp
)
1/2
)/(2r
zj
)
10
0
10
1
t
p
– Pulse Length ( ms )
10
2
1
10
–1
95 9603
Fig. 11 Thermal Response
STAD-SEP.14.2004
PAGE . 5
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