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GS1AWZ

1 A, 50 V, SILICON, SIGNAL DIODE

器件类别:分立半导体    二极管   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
强茂(PANJIT)
包装说明
ROHS COMPLIANT, PLASTIC, SMA(W), 2 PIN
针数
2
Reach Compliance Code
not_compliant
ECCN代码
EAR99
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JESD-30 代码
R-PDSO-C2
元件数量
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
1 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大重复峰值反向电压
50 V
表面贴装
YES
端子形式
C BEND
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
GS1AWZ~GS1MWZ
SURFACE MOUNT GENERAL PURPOSE RECTIFIER
VOLTAGE
FEATURES
For surface mounted applications
Low profile package
Built-in strain relief
Easy pick and place
Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
• Low Forward Drop
• High temperature soldering : 260°C /10 seconds at terminals
• Glass Passivated Junction
• In compliance with EU RoHS 2002/95/EC directives
50 to 1000 Volts
CURRENT
1.0 Amperes
MECHANICAL DATA
Case: SMA(W) molded plastic
Terminals: Solder plated, solderable per MIL-STD-750,Method 2026
Polarity: Indicated by cathode band
Standard packaging: 12 mm tape (EIA-481)
Weight: 0.002 ounce, 0.064 gram
.188(4.80)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
PA RA M E TE R
M a xi mum Re c ur r e nt P e a k Re ve r s e Vo lta g e
M a xi mum RM S Vo lta g e
M a xi mum D C B lo c k i ng Vo lta g e
M a xi mum A ve r a g e F o r wa rd C ur r e nt a t T
L
= 5 0
O
S YMB OL
GS 1 AW Z GS 1 B WZ GS 1 D W Z GS 1 GW Z GS 1 J W Z GS 1 K W Z GS 1 MW Z
UNITS
V
RRM
V
RMS
V
DC
C
I
F ( AV )
I
F S M
V
F
50
35
50
100
70
100
200
140
200
400
280
400
1 .0
600
420
600
800
560
800
1000
700
1000
V
V
V
A
P e a k F o rwa r d S ur g e C ur r e nt : 8 .3 ms s i ng le ha lf
s i ne - wa ve s up e ri mp o s e d o n r a te d lo a d
( J E D E C me tho d )
M a xi mum F o r wa r d Vo lta g e a t 1 . 0 A D C
M a xi mum D C Re ve r s e C urr e nt a t T
J
=2 5
O
C
Ra t e d D C B lo c k i ng Vo lta g e T
J
=1 0 0
O
C
Typ i c a l J unc ti o n c a p a c i t a nc e ( No te 1 )
Typ i c a l J unc ti o n Re s i s ta nc e ( No te 2 )
Op e r a ti ng a nd S to r a g e Te mp e r a ture Ra ng e
30
A
1 .1
0 .5
10
12
30
- 5 5 to +1 5 0
O
V
I
R
μ
A
C
J
R
θ
JL
T
J
,T
S TG
pF
C / W
O
C
NOTES:1. Measured at 1 MHz and applied V
r
= 4.0 volts.
2. 8.0 mm
2
( .013mm thick ) land areas.
REV.0.0-MAR.26.2010
PAGE . 1
GS1AWZ~GS1MWZ
RATING AND CHARACTERISTIC CURVES
1.5
100
AVERAGE FORWARD RECTIFIED
CURRENT, A MPERES
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
P.C.B MOUNTED ON 0.3 x 0.3"
(8.0 x 8.0mm) COPPER PAD A REAS
1.0
50
CAPACITANCE, pF
20
T
J
= 25 C
f = 1.0mHz
Vsig = 50mVp-p
O
10
0.5
5
0
2
0
50
100
O
150
1
0.1
1.0
10
100
1000
LEAD TEMPERATURE, C
REVERSE VOLTAGE, VOLTS
Fig.1 FORWARD CURRENT DERATING CURVE
Fig.2 TYPICAL JUNCTION CAPACITANCE
1
REVERSE LEAKAGE CURRENT IR, µA
10
At
rated VRRM
FORWARD CURRENT IF, A
1
150°C
0.1
25°C
0.1
0.01
0
20
40
60
80
100
120
140
160
0.01
400
600
800
1000
1200
1400
JUNCTION TEMPERATURE TJ, °C
FORWARD VOLTAGE VF, mV
Fig.3 TYPICAL REVERSE LEAKAGE
Fig.4 TYPICAL FORWARD VOLTAGE
REV.0.0-MAR.26.2010
PAGE . 2
GS1AWZ~GS1MWZ
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 7.5K per 13" plastic Reel
T/R - 1.8Kper 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2010
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
REV.0.0-MAR.26.2010
PAGE . 3
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