GS8331/8332/8334
350KHZ Zero-Drift CMOS Rail-to-Rail IO Opamp with RF Filter
Features
•
•
•
•
•
•
•
Single-Supply Operation from +1.8V ~ +5.5V
Rail-to-Rail Input / Output
Gain-Bandwidth Product: 350KHz (Typ@25°C)
Low Input Bias Current: 20pA (Typ@25°C)
Low Offset Voltage: 10uV (Max@25°C)
Quiescent Current: 25µA per Amplifier (Typ)
Operating Temperature: -45°C ~ +125°C
•
•
•
Zero Drift: 0.01µV/°C (Typ)
Embedded RF Anti-EMI Filter
Small Package:
GS8331 Available in SOT23-5, SC-70 Packages
GS8332 Available in SOP-8, MSOP-8 Packages
GS8334 Available in SOP-14 and TSSOP-14 Packages
General Description
The GS833X amplifier is single/dual/quad supply, micro-power, zero-drift CMOS operational amplifiers, the amplifiers offer
bandwidth of 350 kHz, rail-to-rail inputs and outputs, and single-supply operation from 1.8V to 5.5V. GS833X uses chopper
stabilized technique to provide very low offset voltage (less than 10µV maximum) and near zero drift over temperature. Low
quiescent supply current of 25µA per amplifier and very low input bias current of 20pA make the devices an ideal choice for low
offset, low power consumption and high impedance applications.
The
GS833X
offers excellent CMRR without the crossover
associated with traditional complementary input stages. This design results in superior performance for driving
analog-to-digital converters (ADCs) without degradation of differential linearity.
The GS8331 is available in SOT23-5, SC-70 packages. And the GS8332 is available in SOP8, MSOP8 packages. The
GS8334 Quad is available in Green SOP-14 and TSSOP-14 packages. The extended temperature range of -45 C to +125 C
over all supply voltages offers additional design flexibility.
o
o
Applications
•
•
•
Transducer Application
Temperature Measurements
Electronics Scales
•
•
Handheld Test Equipment
Battery-Powered Instrumentation
Pin Configuration
GS8332
OUTA
INA-
INA+
VSS
1
2
3
4
MSOP-8/SOP-8
8 VDD
7 OUTB
6 INB-
5 INB+
Figure 1. Pin Assignment Diagram
March 2020-REV_V4
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GS8331/8332/8334
Absolute Maximum Ratings
Condition
Power Supply Voltage (V
DD
to Vss)
Analog Input Voltage (IN+ or IN-)
PDB Input Voltage
Operating Temperature Range
Junction Temperature
Storage Temperature Range
Lead Temperature (soldering, 10sec)
-55°C
+260°C
)
125°C/W
216°C/W
120°C/W
180°C/W
190°C/W
333°C/W
Min
-0.5V
Vss-0.5V
Vss-0.5V
-45°C
+160°C
+150°C
Max
+7.5V
V
DD
+0.5V
+7V
+125°C
SOP-8, θ
JA
MSOP-8, θ
JA
SOP-14, θ
JA
TSSOP-14, θ
JA
SOT23-5, θ
JA
SC70-5, θ
JA
ESD Susceptibility
HBM
MM
Note:
Stress greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions outside those indicated in the operational
sections of this specification are not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
Package/Ordering Information
MODEL
CHANNEL
ORDER NUMBER
GS8331-TR
GS8331-CR
GS8332-SR
GS8332-MR
GS8334-TR
GS8334-SR
PACKAGE
DESCRIPTION
SOT23-5
SC70-5
SOP-8
MSOP-8
TSSOP-14
SOP-14
PACKAGE
OPTION
Tape and Reel,3000
Tape and Reel,3000
Tape and Reel,4000
Tape and Reel,3000
Tape and Reel,3000
Tape and Reel,2500
MARKING
INFORMATION
8331
8331
GS8332
GS8332
GS8334
GS8334
GS8331
Single
GS8332
Dual
GS8334
Quad
March 2020-REV_V4
℃
Package Thermal Resistance (T
A
=+25
6KV
400V
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GS8331/8332/8334
Electrical Characteristics
(At VS=5V, TA = +25 , VCM = VS/2, RL = 10KΩ, unless otherwise noted.)
PARAMETER
INPUT CHARACTERISTICS
Input Offset Voltage (V
OS
)
Common-Mode
(CMRR)
Rejection
Ratio
OUTPUT CHARACTERISTICS
Output Voltage High (V
OH
)
R
L
= 100kΩ to - V
S
R
L
= 10kΩ to - V
S
R
L
= 100kΩ to + V
S
R
L
= 10kΩ to + V
S
4.998
4.994
5
20
15
14
15
14
20
20
V
V
mV
mV
mA
Output Voltage Low (V
OL
)
POWER SUPPLY
Power Supply Rejection Ratio (PSRR)
DYNAMIC PERFORMANCE
Gain-Bandwidth Product (GBP)
Slew Rate (SR)
NOISE PERFORMANCE
Voltage Noise (e
n
p-p)
Voltage Noise Density (e
n
)
G = +100
R
L
= 10kΩ
0Hz to 10Hz
f = 1kHz
March 2020-REV_V4
℃
Quiescent Current (I
Q
)
V
O
= 0V, -45
℃
℃
V
O
= 0V, T=25
<T<125
℃
℃
V
S
= 2.5V to 5.5V, -45
<T<125
℃
V
S
= 2.5V to 5.5V , T=25
℃
Short Circuit Limit (I
SC
) ,Isink
R
L
=10Ω to - V
S
, T=25
R
L
=10Ω to - V
S
, -45
<T<125
℃
Short Circuit Limit (I
SC
) ,Isource
R
L
=10Ω to - V
S
, -45
℃
℃
℃
℃
R
L
=10Ω to - V
S
, T=25
<T<125
mA
110
100
115
dB
40
50
25
µA
350
0.2
KHz
V/µs
1.1
70
µV
P-P
nV
/
Hz
3/15
℃
℃
℃
Input Offset Voltage Drift (∆V
OS
/∆
T
)
-45
<T<125
℃
Large Signal Voltage Gain ( A
VO
)
V
O
= 0.3V to 4.7V , -45
℃
℃
V
O
= 0.3V to 4.7V , T=25
<T<125
℃
V
CM
= 0V to 5V , -45
℃
℃
V
CM
= 0V to 5V , T=25
℃
Input Offset Current (I
OS
)
T=25
-45
<T<125
℃
℃
℃
℃
Input Bias Current (I
B
)
c
-45
<T<125
℃
100
90
120
110
<T<125
-45
℃
℃
℃
CONDITIONS
MIN
TYP
MAX
UNITS
T=25
2
10
15
<T<125
µV
20
200
2000
pA
10
200
2000
pA
110
dB
145
dB
50
nV/
10
GS8331/8332/8334
Typical Performance characteristics
(T
A
=+25°C, Vs=5V, R
L
=10 kΩ connected to V
S
/2 and V
OUT
= V
S
/2, unless otherwise noted.)
Large Signal Transient Response
C
L
=0pF
G=+1
Large Signal Transient Response
C
L
=0pF
G=+1
Time(40µs/div)
Output Voltage (50mV/div)
Output Voltage (1V/div)
Time(4µs/div)
Positive Overvoltage Recovery
V
SY
= 2.5V
V
IN
=-200mVp-p
(RET to GND)
C
L
=0pF
R
L
=10kΩ
A
V
=-10
Negative Overvoltage Recovery
Output Voltage (50mV/div)
Time (50µs/div)
Time (50µs/div)
Open Loop Gain, Phase Shift vs. Frequency
Phase Shift
Open Loop Gain (dB)
Supply Current (µA)
Supply Current vs. Temperature
V
S
=5.5V
Open Loop Gain
V
s
=1.8V
March 2020-REV_V4
℃
Frequency (Hz)
Temperature ( )
±
±
V
SY
= 2.5V
V
IN
=-200mVp-p
(RET
to
GND)
C
L
=0pF
R
L
=10kΩ
A
V
=-10
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GS8331/8332/8334
Typical Performance characteristics
(T
A
=+25°C, Vs=5V, R
L
=10 kΩ connected to V
S
/2 and V
OUT
= V
S
/2, unless otherwise noted.)
Output Voltage Swing vs.Output Current at +3V
Sourcing Current
Output Voltage (V)
Output Voltage (V)
Output Voltage Swing vs.Output Current at +5V
Sourcing Current
125
Sinking Current
Output Current(mA)
Output Current(mA)
March 2020-REV_V4
℃
Sinking Current
℃ ℃
125
℃
℃ ℃
25
-40
25
-40
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