HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200408
Issued Date : 2004.11.01
Revised Date : 2005.03.10
Page No. : 1/4
H01N45A
N-Channel Power Field Effect Transistor
H01N45A Pin Assignment
3-Lead Plastic
TO-92
Package Code: A
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
12
3
Features
•
Typical R
DS(on)
=4.1Ω
•
Extremely High dv/dt Capability
•
100% Avalanche Tested
•
Gate Charge Minimized
•
New High Voltage Benchmark
D
G
S
Symbol:
Applications
•
Switch Mode Low Power Supplies (SMPS)
•
Low Power, Low Cost CFL (Compact Fluorescent Lamps)
•
Low Power Battery Chargers
Absolute Maximum Ratings
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
D
dv/dt
T
j
, T
stg
I
AR
E
AS
Parameter
Drain-Source Voltage (V
GS
=0)
Drain-Gate Voltage (R
GS
=20KΩ)
Gate-Source Voltage
Drain Current (Continuous) at T
C
=25
o
C
Drain Current (Continuous) at T
C
=100
o
C
Drain Current (Pulsed)
Total Power Dissipation at T
C
=25
o
C
Derate Factor
Peak Diode recovery Voltage Slope
Operating Junction and Storage Temperature Range
Avalanche Current, Repetitive or Not-Repetitive (Pulse width
limited by T
J
Max.)
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C
(V
DD
=100V, V
GS
=10V, I
L
=2A, L=10mH, R
G
=25Ω)
Value
450
450
±30
0.5
0.315
2
2.5
0.025
3
-65 to 150
1.5
25
Units
V
V
V
A
A
A
W
W/°C
V/ns
°C
A
mJ
Thermal Data
Symbol
R
thj-amb
R
thj-lead
T
L
Parameter
Thermal Resistance Junction-Ambient (Max.)
Thermal Resistance Junction-Leadt (Max.)
Maximum Lead Temperature for Soldering Purpose
Value
120
40
260
Units
o
o
C/W
C/W
o
C
H01N45A
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics
(T
case
=25°C, unless otherwise specified)
Symbol
ON/OFF
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Dynamic
g
FS*1
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=25V, V
GS
=0V, f=1MHz
V
DS
≥I
D(on)
xR
DS(on)max.
, I
D
=0.5A
-
-
-
-
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
(V
GS
=0)
Gate-Body Leakage Current
(V
DS
=0)
Gate Threshold Voltage
V
GS
=0V, I
D
=250uA
V
DS
=Max. Rating
V
DS
=Max. Rating, T
C
=125
o
C
V
GS
=±30V
V
DS
=V
GS
, I
D
=250uA
450
-
-
-
2.3
-
Characteristic
Test Conditions
Min.
Spec. No. : MOS200408
Issued Date : 2004.11.01
Revised Date : 2005.03.10
Page No. : 2/4
Typ.
Max.
Unit
-
-
-
-
3
4.1
-
1
50
±100
3.7
4.5
V
uA
nA
V
Ω
Static Drain-Source On Resistance V
GS
=10V, I
D
=0.5A
1.1
185
27.5
6
-
230
-
10
S
pF
Switching On
t
d(on)
t
r
Q
g
Q
gs
Q
gd
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(V
DS
=360V, I
D
=0.5A, V
GS
=10V,
R
G
=4.7Ω)
(V
DD
=225V, I
D
=0.5A, R
G
=4.7Ω,
V
GS
=10V)
-
-
-
-
-
6.7
4
14
2
3.2
-
-
20
-
-
nC
ns
Switching Off
t
r(Voff)
t
f
t
C
Off-Voltage Rise Time
Fall Time
Cross-Over Time
(V
DD
=360V, I
D
=1.5A, R
G
=4.7Ω,
V
GS
=10V)
-
-
-
8.5
12
18
-
-
-
ns
Source Drain Diode
I
SD
I
SDM*2
V
SD*1
t
rr
Q
rr
I
RRM
Source-Drain Current
Source-Drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
=1.5A, V
GS
=0
I
SD
=1.5A, di/dt=100A/us
V
DD
=100V, T
J
=150oC
-
-
-
-
-
-
-
-
-
225
530
4.7
1.5
6
1.6
-
-
-
A
V
ns
uC
A
*1: Pulse Test: Pulse duration=300us, duty cycle 1.5%
*2: Pulse width limited by safe operating area.
H01N45A
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-92 Dimension
A
B
1
2
3
Spec. No. : MOS200408
Issued Date : 2004.11.01
Revised Date : 2005.03.10
Page No. : 3/4
α
2
Marking:
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
H
A
0 1 N4 5
Control Code
α
3
Date Code
Note: Green label is used for pb-free packing
C
D
Pin Style: 1.Gate 2.Drain 3.Source
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
B
C
D
E
F
G
H
I
α1
α2
α3
Min.
4.33
4.33
12.70
0.36
-
3.36
0.36
-
-
-
-
-
Max.
4.83
4.83
-
0.56
*1.27
3.76
0.56
*2.54
*1.27
*5°
*2°
*2°
H
I
E
F
G
*: Typical, Unit: mm
α
1
3-Lead TO-92 Plastic Package
HSMC Package Code: A
TO-92 Taping Dimension
DIM
A
D
D1
D2
F1,F2
H
H1
H2
H2A
H3
H4
L
L1
P
P1
P2
T
T1
T2
W
W1
Min.
4.33
3.80
0.36
4.33
2.40
15.50
8.50
-
-
-
-
-
2.50
12.50
5.95
50.30
-
-
0.36
17.50
5.00
Max.
4.83
4.20
0.53
4.83
2.90
16.50
9.50
1
1
27
21
11
-
12.90
6.75
51.30
0.55
1.42
0.68
19.00
7.00
Unit: mm
H2
H2
H2A H2A
D2
A
H3
H4 H
L
L1
H1
F1F2
T2
T
T1
P1
P
P2
D1
D
W1
W
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
H01N45A
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10
o
C~35
o
C Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
t
P
T
P
Ramp-up
T
L
Ts
max
Temperature
t
L
Spec. No. : MOS200408
Issued Date : 2004.11.01
Revised Date : 2005.03.10
Page No. : 4/4
Critical Zone
T
L
to T
P
Ts
min
t
S
Preheat
Ramp-down
25
t 25
o
C to Peak
Time
Profile Feature
Average ramp-up rate (T
L
to T
P
)
Preheat
- Temperature Min (Ts
min
)
- Temperature Max (Ts
max
)
- Time (min to max) (ts)
Tsmax to T
L
- Ramp-up Rate
Time maintained above:
- Temperature (T
L
)
- Time (t
L
)
Peak Temperature (T
P
)
Time within 5
o
C of actual Peak
Temperature (t
P
)
Ramp-down Rate
Time 25
o
C to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
Sn-Pb Eutectic Assembly
<3
o
C/sec
100
o
C
150
o
C
60~120 sec
<3
o
C/sec
183
o
C
60~150 sec
240
o
C +0/-5
o
C
10~30 sec
<6
o
C/sec
<6 minutes
Pb-Free Assembly
<3
o
C/sec
150
o
C
200
o
C
60~180 sec
<3
o
C/sec
217
o
C
60~150 sec
260
o
C +0/-5
o
C
20~40 sec
<6
o
C/sec
<8 minutes
Peak temperature
245
o
C
±5
o
C
260
o
C +0/-5
o
C
Dipping time
5sec
±1sec
5sec
±1sec
H01N45A
HSMC Product Specification
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