HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200502
Issued Date : 2005.03.01
Revised Date : 2006.08.31
Page No. : 1/5
H01N60 Series
N-Channel Power Field Effect Transistor
H01N60 Series Pin Assignment
Tab
Description
This high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage-blocking capability without degratding
performance over time. In addition, this advanced MOSFET is designed to
withstand high energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and saafety margin against unexpected voltage transients.
Tab
1
2
3
3-Lead Plastic
TO-252
Package Code: J
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
1
2
3
3-Lead Plastic
TO-251
Package Code: I
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
D
Features
•
1A, 600V, R
DS(on)
=8Ω@V
GS
=10V
•
Low Gate Charge 15nC(Typ.)
•
Low C
rss
4pF(Typ.)
•
Fast Switching
•
Improved d
v
/d
t
Capability
H01N60 Series
Symbol:
G
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
j
, T
stg
T
L
Drain-Source Voltage
Drain Current (Continuous T
C
=25
o
C)
Drain Current (Continuous T
C
=100
o
C)
Drain Current (Pulsed)
*1
Gate-Source Voltage
Single Pulse Avalanche Energy
(L=59mH, I
AS
=1.1A, V
DD
=50V, R
G
=25Ω, Starting T
J
=25°C)
Avalanche Current
*1
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
*2
Total Power Dissipation (T
A
=25
o
C)
Total Power Dissipation (T
C
=25
o
C)
Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 5 seconds
Parameter
H01N60I / H01N60J
600
1
0.6
4
±30
50
1
2.8
4.5
2.5
28
0.22
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/nS
W
W
W/°C
°C
°C
*1: Repetitive Rating : Pulse width limited by maximum junction temperature
*2: I
SD
≤1.1A,
di/dt≤200A/us, V
DD
≤BV
DSS
, Starting TJ=25
o
C
H01N60I, H01N60J
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance Junction to Case Max.
Thermal Resistance Junction to Ambient Max.
Value
4.5
110
Spec. No. : MOS200502
Issued Date : 2005.03.01
Revised Date : 2006.08.31
Page No. : 2/5
Units
°C/W
°C/W
ELectrical Characteristics
(T
J
=25°C, unless otherwise specified)
Symbol
•
Off Characteristics
V
DSS
∆BV
DSS
/∆T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage (V
GS
=0V, I
D
=250uA)
Breakdown Voltage Temperature Coefficient (I
D
=250uA, Referenced
to 25
o
C)
Zero Gate Voltage Drain Current (V
DS
=600V, V
GS
=0V)
Zero Gate Voltage Drain Current (V
DS
=480V, T
j
=125°C)
Gate-Body Leakage Current-Forward (V
GS
=30V, V
DS
=0V)
Gate-Body Leakage Current-Reverse (V
GS
=-30V, V
DS
=0V)
600
-
-
-
-
-
-
0.6
-
-
-
-
-
-
1
50
100
-100
V
V/
o
C
uA
uA
nA
nA
Characteristic
Min.
Typ.
Max.
Unit
•
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage (V
DS
=V
GS
, I
D
=250uA)
Static Drain-Source On-Resistance (V
GS
=10V, I
D
=0.6A)
*3
Forward Transconductance (V
DS
=40V, I
D
=0.5A)
*3
2
-
-
-
-
0.75
4
8
-
V
Ω
S
•
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=25V, f=1MHz
-
-
-
210
19
4
250
25
8
pF
•
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=480V, I
D
=1.1A
V
GS
=10V
*3
V
DD
=300V, I
D
=1.1A
R
G
=25Ω
*3
-
-
-
-
-
-
-
-
-
-
-
15
4
3
30
60
45
75
20
-
-
nC
ns
•
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Qrr
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage (V
GS
=0V, I
S
=1A)
Reverse Recovery Time (V
GS
=0V, I
S
=1.1A, dl
F
/dt=100A/us)
*3
Reverse Recovery Charge (V
GS
=0V, I
S
=1.1A, dl
F
/dt=100A/us)
*3
-
-
-
-
-
-
-
-
190
0.53
1
4
1.4
-
-
A
A
V
ns
nC
*3: Pulse Test: Pulse Width
≤300us,
Duty Cycle≤2%
H01N60I, H01N60J
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-252 Dimension
M
A
F
C
G
1
2
3
Date Code
Spec. No. : MOS200502
Issued Date : 2005.03.01
Revised Date : 2006.08.31
Page No. : 3/5
Marking:
a1
Pb Free Mark
Pb-Free: "
.
"
(Note)
H
Normal: None
J
0 1 N 6 0
Control Code
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
N
H
a5
L
a2
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
C
F
G
H
L
M
N
a1
a2
a5
Min.
6.35
4.80
1.30
5.40
2.20
0.40
2.20
0.90
0.40
-
0.65
Max.
6.80
5.50
1.70
6.25
3.00
0.90
2.40
1.50
0.65
*2.30
1.05
*: Typical, Unit: mm
a1
3-Lead TO-252 Plastic
Surface Mount Package
HSMC Package Code: J
A
B
C
D
a1
E
Marking:
M
F
y1
a1
Pb-Free: "
.
"
(Note)
H
Normal: None
Pb Free Mark
J
0 1 N 6 0
Date Code
Control Code
GI
y1
y1
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
J
K
a2
y2
H
N
L
a2
y2
3-Lead TO-252 Plastic
Surface Mount Package
HSMC Package Code: J
a1
O
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
a1
a2
y1
y2
Min.
6.40
-
5.04
-
0.40
0.50
5.90
2.50
9.20
0.60
-
0.66
2.20
0.70
0.82
0.40
2.10
-
-
Max.
6.80
6.00
5.64
*4.34
0.80
0.90
6.30
2.90
9.80
1.00
0.96
0.86
2.40
1.10
1.22
0.60
2.50
5
o
3
o
*: Typical, Unit: mm
H01N60I, H01N60J
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-251 Dimension
A
Tab
Spec. No. : MOS200502
Issued Date : 2005.03.01
Revised Date : 2006.08.31
Page No. : 4/5
M
F
a1
Marking:
Pb Free Mark
Pb-Free: "
.
"
(Note)
H
Normal: None
I
C
G
Date Code
0 1 N 6 0
Control Code
Note: Green label is used for pb-free packing
1
2
3
Pin Style: 1.Gate 2.Drain 3.Source
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
C
F
G
H1
K
K1
L
M
a1
a2
Min.
6.35
4.80
1.30
5.40
6.75
0.50
0.40
0.90
2.20
0.40
-
Max.
6.80
5.50
1.70
6.25
8.00
0.90
0.90
1.50
2.40
0.65
*2.30
L
K
K1
H1
a1
*: Typical, Unit: mm
a2
a2
3-Lead TO-251
Plastic Package
HSMC Package Code: I
A
B
C
D
a1
E
G
Marking:
M
F
y1
a1
Pb Free Mark
Pb-Free: "
.
"
(Note)
H
Normal: None
I
0 1 N 6 0
Date Code
Control Code
I
H
y1
y1
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
J
K
K1
H1
a2
y2
a2
y2
a1
DIM
A
B
C
D
E
F
G
H
H1
I
J
K
K1
M
a1
a2
y1
y2
Min.
6.40
-
5.04
-
0.40
0.50
5.90
-
-
-
-
-
-
2.20
0.40
2.10
-
-
Max.
6.80
6.00
5.64
*4.34
0.80
0.90
6.30
*1.80
*9.30
*16.10
*0.80
0.96
*0.76
2.40
0.60
2.50
5
o
3
o
3-Lead TO-251
Plastic Package
HSMC Package Code: I
*: Typical, Unit: mm
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
H01N60I, H01N60J
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10
o
C~35
o
C Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
t
P
T
P
Ramp-up
T
L
Ts
max
Temperature
t
L
Spec. No. : MOS200502
Issued Date : 2005.03.01
Revised Date : 2006.08.31
Page No. : 5/5
Critical Zone
T
L
to T
P
Ts
min
t
S
Preheat
Ramp-down
25
t 25
o
C to Peak
Time
Profile Feature
Average ramp-up rate (T
L
to T
P
)
Preheat
- Temperature Min (Ts
min
)
- Temperature Max (Ts
max
)
- Time (min to max) (ts)
Tsmax to T
L
- Ramp-up Rate
Time maintained above:
- Temperature (T
L
)
- Time (t
L
)
Peak Temperature (T
P
)
Time within 5
o
C of actual Peak
Temperature (t
P
)
Ramp-down Rate
Time 25
o
C to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
Sn-Pb Eutectic Assembly
<3
o
C/sec
100
o
C
150
o
C
60~120 sec
<3
o
C/sec
183
o
C
60~150 sec
240
o
C +0/-5
o
C
10~30 sec
<6
o
C/sec
<6 minutes
Pb-Free Assembly
<3
o
C/sec
150
o
C
200
o
C
60~180 sec
<3
o
C/sec
217
o
C
60~150 sec
260
o
C +0/-5
o
C
20~40 sec
<6
o
C/sec
<8 minutes
Peak temperature
245
o
C
±5
o
C
260
o
C
±5
o
C
Dipping time
10sec
±1sec
10sec
±1sec
H01N60I, H01N60J
HSMC Product Specification
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