HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200403
Issued Date : 2004.07.01
Revised Date : 2005.09.28
Page No. : 1/7
H02N60 Series
N-Channel Power Field Effect Transistor
H02N60 Series Pin Assignment
Tab
1
2
3
3-Lead Plastic
TO-252
Package Code: J
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3-Lead Plastic
TO-251
Package Code: I
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
Description
This high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage-blocking capability without degratding
performance over time. In addition, this advanced MOSFET is designed to
withstand high energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and saafety margin against unexpected voltage transients.
Tab
Tab
1
2
3
3-Lead Plastic
TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
2
3
1
Features
•
Robust High Voltage Termination
•
Avalanc he Energy Specified
•
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast
Recovery Diode
•
Diode is Characterized for Use in Bridge Circuits
•
I
DSS
and V
DS(on)
Specified at Elevated Temperature
3-Lead Plastic
TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
1
2
3
D
G
S
H02N60 Series
Symbol:
Absolute Maximum Ratings
Symbol
I
D
I
DM
V
GS
Parameter
Drain to Current (Continuous)
Drain to Current (Pulsed)
Gate-to-Source Voltage (Continue)
Total Power Dissipation (T
C
=25
o
C)
H02N60I (TO-251) / H02N60J (TO-252)
H02N60E (TO-220AB)
P
D
H02N60F (TO-220FP)
Derate above 25°C
H02N60I (TO-251) / H02N60J (TO-252)
H02N60E (TO-220AB)
H02N60F (TO-220FP)
T
j
, T
stg
E
AS
T
L
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C
(V
DD
=100V, V
GS
=10V, I
L
=2A, L=10mH, R
G
=25Ω)
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 10 seconds
0.4
0.4
0.33
-55 to 150
35
260
50
50
25
Value
2
8
±30
Units
A
A
V
W
W/°C
°C
mJ
°C
H02N60I, H02N60J, H02N60E, H02N60F
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance Junction to Case Max.
Thermal Resistance Junction to Ambient Max.
Value
TO-251 / TO-252
TO-220AB
TO-220FP
62.5
Spec. No. : MOS200403
Issued Date : 2004.07.01
Revised Date : 2005.09.28
Page No. : 2/7
Units
2
2
3.3
°C/W
°C/W
ELectrical Characteristics
(Tj=25°C, unless otherwise specified)
Symbol
V
(BR)DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
L
D
L
S
Characteristic
Drain-Source Breakdown Voltage (V
GS
=0V, I
D
=250uA)
Drain-Source Leakage Current (V
DS
=600V, V
GS
=0V)
Drain-Source Leakage Current (V
DS
=480V, V
GS
=0V, T
j
=125°C)
Gate-Source Leakage Current-Forward (V
gsf
=30V, V
DS
=0V)
Gate-Source Leakage Current-Reverse (V
gsr
=-30V, V
DS
=0V)
Gate Threshold Voltage (V
DS
=V
GS
, I
D
=250uA)
Static Drain-Source On-Resistance (V
GS
=10V, I
D
=1A)*
Forward Transconductance (V
DS
≥50V,
I
D
=1A)*
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to center of die)
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to source bond pad)
(V
DS
=300V, I
D
=6A, V
GS
=10V)*
(V
DD
=300V, I
D
=2A, R
G
=18Ω,
V
GS
=10V)*
V
GS
=0V, V
DS
=25V, f=1MHz
Min.
600
-
-
-
-
2
-
1
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
435
56
9.2
12
21
30
24
13
2
6
4.5
7.5
Max.
-
1
50
100
-100
4
4.4
-
-
-
-
-
-
-
-
22
-
-
-
-
nH
nH
nC
ns
pF
Unit
V
uA
uA
nA
nA
V
Ω
mhos
*: Pulse Test: Pulse Width
≤300us,
Duty Cycle≤2%
Source-Drain Diode
Symbol
V
SD
t
on
t
rr
Forward On Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
Characteristic
I
S
=2A, V
GS
=0V, T
J
=25
o
C
I
S
=2A, V
GS
=0V, d
IS
/d
t
=100A/us
Min.
-
-
-
Typ.
-
**
340
Max.
1.6
-
-
Units
V
ns
ns
**: Negligible, Dominated by circuit inductance
H02N60I, H02N60J, H02N60E, H02N60F
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
On-Region Characteristic
10
9
V
GS
=10V
V
GS
=8V
800
1000
Spec. No. : MOS200403
Issued Date : 2004.07.01
Revised Date : 2005.09.28
Page No. : 3/7
Capacitance Characteristics
I
D
, Drain-Source Current (A)
8
7
6
5
Capacitance (pF)
V
GS
=6V
V
GS
=5V
600
4
3
2
1
0
0
2
4
6
8
10
V
GS
=4V
400
Ciss
200
Crss
0
0.1
1
10
100
Coss
V
DS
, Drain-Source Voltage (V)
V
DS
, Deain-Source Voltage (V)
Typical On-Resistance & Drain Current
6.0
6
Drain Current Variation with
Gate Voltage and Temperature
V
DS
=10 V
T
C
= 25 C
o
R
DS(ON)
, Drain-Source On-Resistance
...
5.5
V
GS
=10V
4.5
4.0
3.5
3.0
2.5
2.0
0
1
2
3
4
5
6
I
D
, Drain-Source Current (A)
5.0
5
4
3
2
1
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
I
D
, Drain Current (A)
V
GS
, Gate-Source Voltage (V)
Gate Charge Waveforms
12
10
Maximum Safe Operating Area
10
V
DS
=200V
8
I
D
, Drain Current (A)
1ms
10ms
1
V
GS
(V)
6
4
100ms
2
0
0
1
2
3
4
5
0.1
10
100
1000
Q, Gate Charge (nC)
V
DS
, Drain-Source Voltage (V)
H02N60I, H02N60J, H02N60E, H02N60F
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-252 Dimension
M
A
F
C
G
1
2
3
Date Code
Spec. No. : MOS200403
Issued Date : 2004.07.01
Revised Date : 2005.09.28
Page No. : 4/7
Marking:
a1
Pb Free Mark
Pb-Free: "
.
"
(Note)
H
Normal: None
J
0 2 N 6 0
Control Code
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
N
H
a5
L
a2
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
C
F
G
H
L
M
N
a1
a2
a5
Min.
6.35
4.80
1.30
5.40
2.20
0.40
2.20
0.90
0.40
-
0.65
Max.
6.80
5.50
1.70
6.25
3.00
0.90
2.40
1.50
0.65
*2.30
1.05
*: Typical, Unit: mm
a1
3-Lead TO-252 Plastic
Surface Mount Package
HSMC Package Code: J
A
B
C
D
a1
E
Marking:
M
F
y1
a1
Pb Free Mark
Pb-Free: "
.
"
(Note)
H
Normal: None
J
0 2 N 6 0
Date Code
Control Code
GI
y1
y1
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
J
K
a2
y2
H
N
L
a2
y2
3-Lead TO-252 Plastic
Surface Mount Package
HSMC Package Code: J
a1
O
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
a1
a2
y1
y2
Min.
6.40
-
5.04
-
0.40
0.50
5.90
2.50
9.20
0.60
-
0.66
2.20
0.70
0.82
0.40
2.10
-
-
Max.
6.80
6.00
5.64
*4.34
0.80
0.90
6.30
2.90
9.80
1.00
0.96
0.86
2.40
1.10
1.22
0.60
2.50
5
o
3
o
*: Typical, Unit: mm
H02N60I, H02N60J, H02N60E, H02N60F
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-251 Dimension
A
Tab
Spec. No. : MOS200403
Issued Date : 2004.07.01
Revised Date : 2005.09.28
Page No. : 5/7
M
F
a1
Marking:
Pb Free Mark
Pb-Free: "
.
"
(Note)
H
Normal: None
I
C
G
Date Code
0 2 N 6 0
Control Code
Note: Green label is used for pb-free packing
1
2
3
Pin Style: 1.Gate 2.Drain 3.Source
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
C
F
G
H1
K
K1
L
M
a1
a2
Min.
6.35
4.80
1.30
5.40
6.75
0.50
0.40
0.90
2.20
0.40
-
Max.
6.80
5.50
1.70
6.25
8.00
0.90
0.90
1.50
2.40
0.65
*2.30
L
K
K1
H1
a1
*: Typical, Unit: mm
a2
a2
3-Lead TO-251
Plastic Package
HSMC Package Code: I
A
B
C
D
a1
E
G
Marking:
M
F
y1
a1
Pb Free Mark
Pb-Free: "
.
"
(Note)
H
Normal: None
I
0 2 N 6 0
Date Code
Control Code
I
H
y1
y1
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
J
K
K1
H1
a2
y2
a2
y2
a1
DIM
A
B
C
D
E
F
G
H
H1
I
J
K
K1
M
a1
a2
y1
y2
Min.
6.40
-
5.04
-
0.40
0.50
5.90
-
-
-
-
-
-
2.20
0.40
2.10
-
-
Max.
6.80
6.00
5.64
*4.34
0.80
0.90
6.30
*1.80
*9.30
*16.10
*0.80
0.96
*0.76
2.40
0.60
2.50
5
o
3
o
3-Lead TO-251
Plastic Package
HSMC Package Code: I
*: Typical, Unit: mm
H02N60I, H02N60J, H02N60E, H02N60F
HSMC Product Specification
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