HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200902
Issued Date : 2009.01.20
Revised Date : 2009.08.05
Page No. : 1/5
H10N60 Series
N-Channel Power MOSFET (600V,10A)
H10N60 Series
Tab
Applications
•
Switch Mode Power Supply
•
Uninterruptable Power Supply
•
High Speed Power Switching
1
3-Lead Plastic
TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
2
3
Features
•
H10N60
is a High voltage NChannel enhancement mode power MOSFET
chip fabricated in advanced silicon epitaxial planar technology
•
Advanced termination scheme to provide enhanced voltageblocking capability
•
Avalanche Energy Specified
•
Source to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode;
•
The packaged product is widely used in AC-DC power suppliers, DCDC converters and
Hbridge PWM motor drivers
1 2
3-Lead
TO-220FP)
Plastic Package
Package Code: F
Pin 1: Gate
Pin 2: Drain
3
Pin 3: Source
H10N60 Series Symbol
D
G
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
Drain-Source Voltage
Continuous Drain Current (V
GS
@10V, T
C
=25 C)
Continuous Drain Current (V
GS
@10V, T
C
=100
o
C)
Pulsed Drain Current
*1
Gate-to-Source Voltage
Total Power Dissipation (T
C
=25
o
C)
P
D
Linear Derating Factor
E
AS
I
AR
E
AR
T
J
T
stg
Single Pulse Avalanche Energy
*2
Avalanche Current
*1
Repetitive Avalanche Energy
*1
Operating Junction Temperature Range
Storage Temperature Range
TO-220AB
TO-220FP
TO-220AB
TO-220FP
68
10
66
-55 to 150
-55 to 150
o
Parameter
Value
600
10
6.4
36
±30
150
50
1.25
0.4
Units
V
A
A
A
V
W
W/°C
mJ
A
mJ
°C
°C
*1: Repetitive rating; pulse width limited by max. junction temperature
*2: Starting T
J
=25°C, L=1.2mH, R
G
=25Ω, I
AS
=10A
*3: I
SD
≤14A,
di/dt≤130A/us, V
DD
≤V
(BR)DSS
, T
J
≤150°C
Thermal Characteristics
Symbol
Rθ
JC
Rθ
JA
H10N60 Series
Parameter
Thermal Resistance Junction to Case (Max.)
Thermal Resistance Junction to Ambient (Max.)
Value
TO-220AB
TO-220FP
62
1.3
3.5
Units
°C/W
°C/W
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
ELectrical Characteristics
(T
j
=25°C, unless otherwise specified)
Symbol
V
(BR)DSS
ΔV
(BR)DSS
/ΔT
J
Spec. No. : MOS200902
Issued Date : 2009.01.20
Revised Date : 2009.08.05
Page No. : 2/5
Characteristic
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Drain-Source Leakage Current
Drain-Source Leakage Current
Gate-Source Forward Leakage
Gate-Source Reverse Leakage
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
V
GS
=0V, I
D
=250uA
Reference to 25
o
C, I
D
=1mA
V
DS
=600V, V
GS
=0V
V
DS
=400V, V
GS
=0V, T
j
=125°C
V
gsf
=30V, V
DS
=0V
V
gsr
=-30V, V
DS
=0V
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V, I
D
=5.0A
*4
V
DS
=40V, I
D
=5.0A
Min.
600
-
-
-
-
2
-
-
Typ.
-
0.58
-
-
-
-
-
5
2780
325
8.8
20
26
98
45
62
15
26
Max.
-
-
10
60
100
-100
4
1.0
-
-
-
-
-
-
-
-
Unit
V
V/
o
C
uA
uA
nA
nA
V
Ω
S
pF
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=15V, V
GS
=0V, f=1MHz
-
-
-
-
-
-
-
-
-
(V
DD
=320V, I
D
=10A, R
G
=10Ω,
R
D
=32Ω)
*4
ns
(V
DS
=480V, I
D
=10A, V
GS
=10V)
*4
nC
Source-Drain Diode
Symbol
I
S
V
SD
Continuous Source Current
(Body Diode)
Diode Forward Voltage
Characteristic
Page1 MOSFET symbol showing the
integral reverse P-N junction diode.
I
S
=10A, V
GS
=0V, T
J
=25°C
*4
Min.
-
-
Typ.
-
-
Max. Units
10
1.4
A
V
*4: Pulse Test: Pulse Width≤300us, Duty Cycle≤2%
*5: C
OSS
eff. Is a fixed capacitance that gives the same charging time as C
OSS
while V
DS
is rising from 0 to 80% V
DSS
H10N60 Series
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
12
10
5V
ID,Drain current(
ID,Drain current(
Spec. No. : MOS200902
Issued Date : 2009.01.20
Revised Date : 2009.08.05
Page No. : 3/5
10V
6V
6
5
Ta=150
℃
10V
6V
5V
8
6
4
2
0
0
2
Ta=25
℃
4
4V
3
2
1
0
4V
4
6
8
10
12
VDS,Drain-to-sourceVoltage(V)
Fig 1.Ty
pical Output Characteristics
14
16
0
2
4
6
8
10
12
VDS,Drain-to-source Voltage(V)
Fig 2.Typical Output Characteristics
14
16
1
VGS=10V
0.9
Rds(on),Drain-Source On-Resistan
1.8
1.6
1.4
ID=10A
VGS=10V
0.8
1.2
Normalized RDS(O
1
0.8
0.6
0.4
0.2
0
-50
0.7
0.6
0.5
0.4
0
2
4
6
ID Drain,Current(A)
8
10
12
0
50
Tj,Junction Temperature(
℃
)
100
150
Fig 3.Typical On-Resistance & Drain Current
Fig 4.Normalized On-Resistance v.s.Junction
100
4
3.5
VGS(th)(V
10
Tj=150
℃
3
2.5
2
IS(A)
Tj=25
℃
1
0.1
1.5
1
-50
0
0.2
0.4
0.6
0.8
1
1.2
0.01
VSD,Source-to-Drain Voltage(V)
Fig 5.Forward Characteristic of Reverse Diode
0
50
Tj,Junction Temperature(
℃
)
100
150
Fig 6.Gate Threshold Voltage v.s.junction
H10N60 Series
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-220AB Dimension
Marking:
A
D
B
E
C
F
Spec. No. : MOS200902
Issued Date : 2009.01.20
Revised Date : 2009.08.05
Page No. : 4/5
H
I
G
Tab
P
L
J
M
3
2
1
O
N
K
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2 & Tab.Drain 3.Source
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Min.
5.58
8.38
4.40
1.15
0.35
2.03
9.66
-
-
3.00
0.75
2.54
1.14
-
12.70
14.48
Max.
7.49
8.90
4.70
1.39
0.60
2.92
10.28
*16.25
*3.83
4.00
0.95
3.42
1.40
*2.54
14.27
15.87
*: Typical, Unit: mm
3-Lead TO-220AB
Plastic Package
HSMC Package Code: E
TO-220FP Dimension
Marking:
A
α
1
D
α
4
E O
C
α
2
α
3
α
5
I
N
3
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
G
J
F
2
K
1
M
L
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
Min.
A
6.48
C
4.40
D
2.34
E
0.45
F
9.80
G
3.10
I
2.70
J
0.60
K
2.34
L
12.48
M
15.67
N
0.90
O
2.00
-
α1/2/4/5
Max.
7.40
4.90
3.00
0.80
10.36
3.60
3.43
1.00
2.74
13.60
16.20
1.47
2.96
o
*5
Unit: mm
3-Lead TO-220FP
Plastic Package
HSMC Package Code: F
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
H10N60 Series
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10
o
C~35
o
C Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
t
P
T
P
Ramp-up
T
L
Ts
max
Temperature
t
L
Spec. No. : MOS200902
Issued Date : 2009.01.20
Revised Date : 2009.08.05
Page No. : 5/5
Critical Zone
T
L
to T
P
Ts
min
t
S
Preheat
Ramp-down
25
t 25
o
C to Peak
Time
Profile Feature
Average ramp-up rate (T
L
to T
P
)
Preheat
- Temperature Min (Ts
min
)
- Temperature Max (Ts
max
)
- Time (min to max) (ts)
Tsmax to T
L
- Ramp-up Rate
Time maintained above:
- Temperature (T
L
)
- Time (t
L
)
Peak Temperature (T
P
)
Time within 5
o
C of actual Peak
Temperature (t
P
)
Ramp-down Rate
Time 25
o
C to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
Sn-Pb Eutectic Assembly
<3
o
C/sec
100
o
C
150
o
C
60~120 sec
<3
o
C/sec
183
o
C
60~150 sec
240
o
C +0/-5
o
C
10~30 sec
<6
o
C/sec
<6 minutes
Pb-Free Assembly
<3
o
C/sec
150
o
C
200
o
C
60~180 sec
<3
o
C/sec
217
o
C
60~150 sec
260
o
C +0/-5
o
C
20~40 sec
<6
o
C/sec
<8 minutes
Peak temperature
245
o
C
±5
o
C
260
o
C +0/-5
o
C
Dipping time
5sec
±1sec
5sec
±1sec
H10N60 Series
HSMC Product Specification
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